2N7002K

2N7002K 60V/0.3A N Channel Advanced Power MOSFET Features • Low RDS(on) @VGS=10V • 5V Logic Level Control • N Channel SOT23 Package • HMB ESD Protection 2KV • Pb−Free, RoHS Compliant V(BR)DSS RDS(ON) Typ ID Max 2.2Ω @ 10V 60V 0.3A 2.8Ω @ 4.5V Applications • Logic level translators • High-speed line drivers • Low-side load switch • Switching circuits SOT23 Order Information Product Package Marking Packing 2N7002K SOT23 02K 3000PCS/Reel 2N7002K SOT23 702K 3000PCS/Reel Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±10 V V(BR)DSS Drain-Source Breakdown Voltage 60 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -50 to 150 °C TA =25°C 1.2 A TA =25°C 0.3 TA =70°C 0.24 TA =25°C 0.3 TA =70°C 0.2 Mounted on Large Heat Sink IDM Pulse Drain Current Tested① ID Continuous Drain Current(VGS=4.5V) PD R JA V1.0_Aug,2017 A Maximum Power Dissipation W 400 Thermal Resistance Junction-Ambient -1- °C/W www.wpmtek.com 2N7002K 60V/0.3A N Channel Advanced Power MOSFET Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 -- -- V Zero Gate Voltage Drain Current(TA=25℃) VDS=60V, VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(TA=125℃) VDS=48V, VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS=±10V, VDS=0V -- -- ±10 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.5 2.5 V RDS(ON) Drain-Source On-State Resistance② VGS=10V, ID=0.3A -- 2.2 4 Ω RDS(ON) Drain-Source On-State Resistance② VGS=4.5V, ID=0.3A -- 2.8 6 Ω -- 16 -- pF -- 3.8 -- pF -- 0.6 -- pF -- 0.72 -- nC -- 0.15 -- nC -- 0.22 -- nC -- 5 -- ns -- 3.3 -- ns - 18 -- ns -- 5.2 -- ns -- -- 0.5 A -- 0.73 1.2 V IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=30V, VGS=0V, f=1MHz VDS=30V ID=0.5A, VGS=10V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time t d(off) Turn Off Delay Time tf Turn Off Fall Time VDD=30V, ID=0.3A, RG=3.3Ω, VGS=10V Source Drain Diode Characteristics ISD Source drain current(Body Diode) VSD Forward on voltage② TA=25℃ Tj=25℃, ISD=0.5A, VGS=0V Notes: ① Pulse width limited by maximum allowable junction temperature ②Pulse test ; Pulse width300s, duty cycle2%. V1.0_Aug,2017 -2- www.wpmtek.com 2N7002K 60V/0.3A N Channel Advanced Power MOSFET ID, Drain-Source Current (mA) VGS(TH), Gate -Source Voltage (V) Typical Characteristics Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature VDS, Drain -Source Voltage (mV) Tj - Junction Temperature (°C) ID, Drain-Source Current (mA) VDS, Drain -Source Voltage (V) VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics Fig4. Drain -Source Voltage vs Gate -Source Voltage ISD, Reverse Drain Current (A) -ID - Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage V1.0_Aug,2017 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area -3- www.wpmtek.com 2N7002K 60V/0.3A N Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms V1.0_Aug,2017 -4- www.wpmtek.com 2N7002K 60V/0.3A N Channel Advanced Power MOSFET SOT23 Mechanical Data DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 0.90 1.01 1.15 A1 0.01 0.05 0.10 bp 0.30 0.42 0.50 c 0.08 0.13 0.15 D 2.80 2.92 3.00 E 1.20 1.33 1.40 e -- 1.90 -- e1 -- 0.95 -- HE 2.25 2.40 2.55 Lp 0.30 0.42 0.50 Q 0.45 0.49 0.55 v -- 0.20 -- w -- 0.10 -- V1.0_Aug,2017 -5- www.wpmtek.com