WST2088

WST2088 N-Ch MOSFET Product Summery General Description The WST2088 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 8mΩ 8.8A Applications The WST2088 meet the RoHS and Green Product requirement with full function reliability approved. ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Features SOT-23-3L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID@Tc=25℃ Continuous Drain Current, VGS @ 4.5V 8.8 A ID@Tc=70℃ Continuous Drain Current, VGS @ 4.5V 6.2 A IDP Pulsed Drain Current 40 A PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Rthj-c www.winsok.tw Parameter Typ. Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-case Page 1 ----- Max. 25 8 Unit ℃/W ℃/W Rev:1.0 May.2019 WST2088 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.018 --- V/℃ --- 8 13 VGS=2.5V , ID=5A --- 10 19 VGS=4.5V , ID=6A mΩ VGS=VDS , ID =250uA 0.5 --- 1.3 IDSS Drain-Source Leakage Current VDS=16V , VGS=0V. --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA Qg Total Gate Charge --- 16 --- Qgs Gate-Source Charge --- 3 --- Qgd Gate-Drain Charge --- 4.5 --- Turn-On Delay Time --- 10 --- VGS(th) Td(on) Tr Td(off) Tf Ciss Gate Threshold Voltage VDS=15V , VGS=4.5V , ID=6A Rise Time VDS=10V , VGS=4.5V , --- 13 --- Turn-Off Delay Time RG=3.3Ω ID=1A --- 28 --- --- 7 --- Fall Time Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz nC ns 1400 --- --- 170 --- --- 135 --- Min. Typ. Max. Unit --- --- 1.2 V --- 8.5 --- nS --- 2.5 --- nC --- Input Capacitance V pF Diode Characteristics Symbol Parameter VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VGS=0V , IS=1A IF=1A , VGS=0V, dI/dt=100A/µs Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t