C945

TRANSISTOR (NPN) FEATURE Excellent hFE Linearity SOT-23 Low noise Complementary to A733 MARKING: 1．BASE 2．EMITTER 3．COLLECTOR CR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Collector cut-off current ICER VCE=55V, R=10MΩ 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=6V, IC=1mA 200 hFE(2) VCE=6V, IC=0.1mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V Transition frequency fT Collector output capacitance Cob Noise figure NF VCE=6V,IC=10mA,f =30 MHz VCB=10V, IE=0, 150 MHz f=1MHZ VCE=6V, IC=0.1mA Rg=10kΩ, f=1kMHZ 4 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 3.0 pF 10 dB Typical Characteristics C945 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.