NDS66PT5-16ET TR

64Mb (x16) - SDR Synchronous DRAM 4M x 16 bit Synchronous DRAM (SDRAM) Overview The 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command. The SDRAM provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. Features • JEDEC Standard Compliant • Auto Refresh and Self Refresh • AEC-Q100 Compliant available • Effective refresh rate • Fast access time from clock: 4.5/5.4 ns • Fast clock rate: 200/166 MHz - 64ms @ -40°C ≦ TC ≦ +85°C - 32ms @ +85°C ≦ TC ≦ +95°C • Fully synchronous operation - 16ms @ +95°C ≦ TC ≦ +105°C • CKE power down mode • Internal pipelined architecture • Single +3.3V  0.3V power supply • 1M word x 16-bit x 4-bank • Interface: LVTTL • Programmable Mode registers • 54-pin 400 mil plastic TSOP II package - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function - Optional drive strength control - Pb and Halogen Free • 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package - Pb free and Halogen free • Operating temperature range - Extended Test (ET): TC = 0~70°C - Industrial (IT): TC = -40~85°C - Automotive (AT): TC = -40~105°C DISCLAIMER: All product, product specifications, and data are subject to change without notice to improve reliability, function or design, or otherwise. The information provided herein is correct to the best of Insignis Technology Corporation’s knowledge. No liability for any errors, facts or opinions is accepted. Customers must satisfy themselves as to the suitability of this product for their application. No responsibility for any loss as a result of any person placing reliance on any material contained herein will be accepted. NDS66Pv0.8-64Mb(x16)20180927 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P How to Order Function Density IO Width SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 SDR 64Mb x16 Pkg Type Pkg Size BGA BGA BGA BGA BGA BGA TSOPII TSOPII TSOPII TSOPII TSOPII TSOPII 8x8(x1.2) 8x8(x1.2) 8x8(x1.2) 8x8(x1.2) 8x8(x1.2) 8x8(x1.2) 54l 10x22(x1.2) 54l 10x22(x1.2) 54l 10x22(x1.2) 54l 10x22(x1.2) 54l 10x22(x1.2) 54l 10x22(x1.2) Speed & Latency PC166 PC166 PC166 PC200 PC200 PC200 PC166 PC166 PC166 PC200 PC200 PC200 Visit: http://insignis-tech.com/how-to-buy NDS66Pv0.8-64Mb(x16)20180927 2 Option Extended Test Industrial Temp Automotive Temp Extended Test Industrial Temp Automotive Temp Extended Test Industrial Temp Automotive Temp Extended Test Industrial Temp Automotive Temp INSIGNIS PART NUMBER: NDS66PBA-16ET NDS66PBA-16IT NDS66PBA-16AT NDS66PBA-20ET NDS66PBA-20IT NDS66PBA-20AT NDS66PT5-16ET NDS66PT5-16IT NDS66PT5-16AT NDS66PT5-20ET NDS66PT5-20IT NDS66PT5-20AT 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Package Pin Assignments Figure 1. Pin Assignment (Top View) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM WE# CAS# RAS# CS# BA0 BA1 A10/AP A0 A1 A2 A3 VDD 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC/RFU UDQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS Figure 1.1 Ball Assignment (Top View) 1 2 3 A VSS DQ15 B DQ14 C … 7 8 9 VSSQ VDDQ DQ0 VDD DQ13 VDDQ VSSQ DQ2 DQ1 DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 D DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 E DQ8 NC VSS VDD LDQM DQ7 F UDQM CLK CKE CAS# RAS# WE# G NC A11 A9 BA0 BA1 CS# H A8 A7 A6 A0 A1 A10 J VSS A5 A4 A3 A2 VDD NDS66Pv0.8-64Mb(x16)20180927 3 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Block Diagram Figure 2. Block Diagram CLOCK BUFFER Row Decoder CLK CKE 1M x 16 CELL ARRAY (BANK #A) Column Decoder COMMAND DECODER DQ0 DQ Buffer CONTROL SIGNAL GENERATOR DQ15 Row Decoder COLUMN COUNTER 1M x 16 CELL ARRAY (BANK #B) Column Decoder Row Decoder LDQM, UDQM A10/AP 1M x 16 CELL ARRAY (BANK #C) MODE REGISTER ~ A0 A9 A11 BA0 BA1 ADDRESS BUFFER REFRESH COUNTER Row Decoder Column Decoder 1M x 16 CELL ARRAY (BANK #D) Column Decoder NDS66Pv0.8-64Mb(x16)20180927 ~ CS# RAS# CAS# WE# 4 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Pin Descriptions Table 3. Pin Details Symbol Type Description CLK Input Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CLK. CLK also increments the internal burst counter and controls the output registers. CKE Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. If CKE goes low synchronously with clock (set-up and hold time same as other inputs), the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the CKE remains low. When all banks are in the idle state, deactivating the clock controls the entry to the Power Down and Self Refresh modes. CKE is synchronous except after the device enters Power Down and Self Refresh modes, where CKE becomes asynchronous until exiting the same mode. The input buffers, including CLK, are disabled during Power Down and Self Refresh modes, providing low standby power. BA0,BA1 Input Bank Activate: BA0, BA1 input select the bank for operation. BA1 BA0 Select Bank 0 0 BANK #A 0 1 BANK #B 1 0 BANK #C 1 1 BANK #D A0-A11 Input Address Inputs: A0-A11 are sampled during the BankActivate command (row address A0-A11) and Read/Write command (column address A0-A7 with A10 defining Auto Precharge) to select one location out of the 1M available in the respective bank. During a Precharge command, A10 is sampled to determine if all banks are to be precharged (A10 = HIGH). The address inputs also provide the op-code during a Mode Register Set command. CS# Input Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the command decoder. All commands are masked when CS# is sampled HIGH. CS# provides for external bank selection on systems with multiple banks. It is considered part of the command code. RAS# Input Row Address Strobe: The RAS# signal defines the operation commands in conjunction with the CAS# and WE# signals and is latched at the positive edges of CLK. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH," either the BankActivate command or the Precharge command is selected by the WE# signal. When the WE# is asserted "HIGH," the BankActivate command is selected and the bank designated by BA is turned on to the active state. When the WE# is asserted "LOW," the Precharge command is selected and the bank designated by BA is switched to the idle state after the precharge operation. CAS# Input Column Address Strobe: The CAS# signal defines the operation commands in conjunction with the RAS# and WE# signals and is latched at the positive edges of CLK. When RAS# is held "HIGH" and CS# is asserted "LOW," the column access is started by asserting CAS# "LOW." Then, the Read or Write command is selected by asserting WE# "LOW" or "HIGH." NDS66Pv0.8-64Mb(x16)20180927 5 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P WE# Input Write Enable: The WE# signal defines the operation commands in conjunction with the RAS# and CAS# signals and is latched at the positive edges of CLK. The WE# input is used to select the BankActivate or Precharge command and Read or Write command. LDQM, UDQM Input Data Input/Output Mask: Controls output buffers in read mode and masks Input data in write mode. DQ0-DQ15 Input / Output Data I/O: The DQ0-15 input and output data are synchronized with the positive edges of CLK. The I/Os are maskable during Reads and Writes. NC/RFU - VDDQ Supply DQ Power: Provide isolated power to DQs for improved noise immunity. (3.3V 0.3V) VSSQ Supply DQ Ground: Provide isolated ground to DQs for improved noise immunity. (0V) VDD Supply Power Supply: +3.3V  0.3V VSS Supply Ground No Connect: These pins should be left unconnected. NDS66Pv0.8-64Mb(x16)20180927 6 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Operation Mode Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 4 shows the truth table for the operation commands. Table 4. Truth Table (Note (1), (2)) Command State CKEn-1 CKEn DQM BA0,1 A10 A0-9,11 Idle(3) H X X V BankPrecharge Any H X X V L PrechargeAll Any H X X X Write Active(3) H X V Write and AutoPrecharge Active(3) H X Read Active(3) H Read and Autoprecharge Active(3) (Extended) Mode Register Set No-Operation BankActivate L L H H X L L H L H X L L H L V L L H L L V V H Column address (A0 ~ A7) L H L L X V V L L H L H H X V V H Column address (A0 ~ A7) L H L H Idle H X X L L L L Any H X X X X X L H H H Active(4) H X X X X X L H H L Device Deselect Any H X X X X X H X X X AutoRefresh Idle H H X X X X L L L H SelfRefresh Entry Idle H L X X X X L L L H SelfRefresh Exit Idle L H X X X X H X X X L H H H H X X X L V V V H X X X L H H H Burst Stop Row address CS# RAS# CAS# WE# OP code (SelfRefresh) Clock Suspend Mode Entry Power Down Mode Entry Clock Suspend Mode Exit Power Down Mode Exit Active Any(5) H H L L X X X X X X X X Active L H X X X X X X X X Any L H X X X X H X X X L H H H (PowerDown) Data Write/Output Enable Active H X L X X X X X X X Data Mask/Output Disable Active H X H X X X X X X X Note: 1. V=Valid, X=Don't Care L=Low level H=High level 2. CKEn signal is input level when commands are provided. CKEn-1 signal is input level one clock cycle before the commands are provided. 3. These are states of bank designated by BA signal. 4. Device state is 1, 2, 4, 8, and full page burst operation. 5. Power Down Mode cannot enter in the burst operation. When this command is asserted in the burst cycle, device state is clock suspend mode. NDS66Pv0.8-64Mb(x16)20180927 7 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Commands 1 BankActivate (RAS# = "L", CAS# = "H", WE# = "H", BAs = Bank, A0-A11 = Row Address) The BankActivate command activates the idle bank designated by the BA0, 1 signal. By latching the row address on A0 to A11 at the time of this command, the selected row access is initiated. The read or write operation in the same bank can occur after a time delay of t RCD(min.) from the time of bank activation. A subsequent BankActivate command to a different row in the same bank can only be issued after the previous active row has been precharged (refer to the following figure). The minimum time interval between successive BankActivate commands to the same bank is defined by tRC(min.). The SDRAM has four internal banks on the same chip and shares part of the internal circuitry to reduce chip area; therefore, it restricts the back-to-back activation of the two banks. tRRD(min.) specifies the minimum time required between activating different banks. After this command is used, the Write command and the Block Write command perform the no mask write operation. Figure 3. BankActivate Command Cycle (Burst Length = n) T0 T1 T2 T3 Tn+3 Tn+4 Tn+5 Tn+6 CLK ADDRESS Bank A Row Addr. Bank A Col Addr. Bank B Row Addr. RAS# - CAS# delay(tRCD) COMMAND Bank A Activate NOP NOP Bank A Row Addr. RAS# - RAS# delay time(tRRD) Bank B Activate R/W A with AutoPrecharge NOP NOP Bank A Activate RAS# - Cycle time(tRC) AutoPrecharge Begin 2 Don’t Care BankPrecharge command (RAS# = "L", CAS# = "H", WE# = "L", BAs = Bank, A10 = "L", A0-A9 and A11 = Don't care) The BankPrecharge command precharges the bank designated by BA signal. The precharged bank is switched from the active state to the idle state. This command can be asserted any time after tRAS(min.) is satisfied from the BankActivate command in the desired bank. The maximum time any bank can be active is specified by tRAS(max.). Therefore, the precharge function must be performed in any active bank within tRAS(max.). At the end of precharge, the precharged bank is still in the idle state and is ready to be activated again. 3 PrechargeAll command (RAS# = "L", CAS# = "H", WE# = "L", BAs = Don’t care, A10 = "H", A0-A9 and A11 = Don't care) The PrechargeAll command precharges all banks simultaneously and can be issued even if all banks are not in the active state. All banks are then switched to the idle state. NDS66Pv0.8-64Mb(x16)20180927 8 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P 4 Read command (RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "L", A0-A7 = Column Address) The Read command is used to read a burst of data on consecutive clock cycles from an active row in an active bank. The bank must be active for at least t RCD(min.) before the Read command is issued. During read bursts, the valid data-out element from the starting column address will be available following the CAS latency after the issue of the Read command. Each subsequent data-out element will be valid by the next positive clock edge (refer to the following figure). The DQs go into high-impedance at the end of the burst unless other command is initiated. The burst length, burst sequence, and CAS latency are determined by the mode register, which is already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue. Figure 4. Burst Read Operation (Burst Length = 4, CAS# Latency = 2, 3) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND READ A NOP NOP CAS# Latency=2 tCK2, DQ DOUT A0 CAS# Latency=3 tCK3, DQ NOP NOP NOP NOP DOUT A1 DOUT A2 DOUT A3 DOUT A0 DOUT A1 DOUT A2 NOP NOP DOUT A3 The read data appears on the DQs subject to the values on the DQM inputs two clocks earlier (i.e. DQM latency is two clocks for output buffers). A read burst without the auto precharge function may be interrupted by a subsequent Read or Write command to the same bank or the other active bank before the end of the burst length. It may be interrupted by a BankPrecharge/PrechargeAll command to the same bank too. The interrupt coming from the Read command can occur on any clock cycle following a previous Read command (refer to the following figure). Figure 5. Read Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND READ A CAS# Latency=2 tCK2, DQ CAS# Latency=3 tCK3, DQ READ B NOP DOUT A0 NOP NOP NOP NOP DOUT B0 DOUT B1 DOUT B2 DOUT B3 DOUT A0 DOUT B0 DOUT B1 DOUT B2 NOP NOP DOUT B3 The DQM inputs are used to avoid I/O contention on the DQ pins when the interrupt comes from a Write command. The DQMs must be asserted (HIGH) at least two clocks prior to the Write command to suppress data-out on the DQ pins. To guarantee the DQ pins against I/O contention, a single cycle with high-impedance on the DQ pins must occur between the last read data and the Write command (refer to the following three figures). If the data output of the burst read occurs at the second clock of the burst write, the DQMs must be asserted (HIGH) at least one clock prior to the Write command to avoid internal bus contention. NDS66Pv0.8-64Mb(x16)20180927 9 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 6. Read to Write Interval (Burst Length  4, CAS# Latency = 2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 CLK DQM COMMAND NOP Bank A Activate NOP NOP NOP READ A CAS# Latency=2 tCK2, DQ WRITE A NOP NOP NOP DIN A0 DIN A1 DIN A2 DIN A3 Figure 7. Read to Write Interval (Burst Length ≧ 4, CAS# Latency = 3) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK DQM COMMAND NOP READ A NOP NOP CAS# Latency=3 tCK3, DQ NOP NOP DOUT A0 WRITE B NOP NOP DIN B0 DIN B1 DIN B2 Must be Hi-Z before the Write Command Don’t Care Figure 8. Read to Write Interval (Burst Length  4, CAS# Latency = 2) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK DQM COMMAND NOP NOP READ A NOP NOP CAS# Latency=2 tCK2, DQ WRITE B NOP NOP NOP DIN B0 DIN B1 DIN B2 DIN B3 Must be Hi-Z before the Write Command Don’t Care A read burst without the auto precharge function may be interrupted by a BankPrecharge/PrechargeAll command to the same bank. The following figure shows the optimum time that BankPrecharge/PrechargeAll command is issued in different CAS latency. NDS66Pv0.8-64Mb(x16)20180927 10 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 9. Read to Precharge (CAS# Latency = 2, 3) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK Bank, Col A ADDRESS Bank Row Bank (s) tRP COMMAND READ A NOP CAS# Latency=2 tCK2, DQ NOP NOP DOUT A0 CAS# Latency=3 tCK3, DQ Precharge NOP NOP DOUT A1 DOUT A2 DOUT A3 DOUT A0 DOUT A1 DOUT A2 Activate NOP DOUT A3 5 Read and AutoPrecharge command (RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A7 = Column Address) The Read and AutoPrecharge command automatically performs the precharge operation after the read operation. Once this command is given, any subsequent command cannot occur within a time delay of {tRP(min.) + burst length}. At full-page burst, only the read operation is performed in this command and the auto precharge function is ignored. 6 Write command (RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "L", A0-A7 = Column Address) The Write command is used to write a burst of data on consecutive clock cycles from an active row in an active bank. The bank must be active for at least t RCD(min.) before the Write command is issued. During write bursts, the first valid data-in element will be registered coincident with the Write command. Subsequent data elements will be registered on each successive positive clock edge (refer to the following figure). The DQs remain with highimpedance at the end of the burst unless another command is initiated. The burst length and burst sequence are determined by the mode register, which is already programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). Figure 10. Burst Write Operation (Burst Length = 4) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND DQ NOP WRITE A NOP NOP NOP NOP DIN A0 DIN A1 DIN A2 DIN A3 don’t care NOP NOP NOP The first data element and the write are registered on the same clock edge A write burst without the auto precharge function may be interrupted by a subsequent Write, BankPrecharge/PrechargeAll, or Read command before the end of the burst length. An interrupt coming from Write command can occur on any clock cycle following the previous Write command (refer to the following figure). NDS66Pv0.8-64Mb(x16)20180927 11 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 11. Write Interrupted by a Write (Burst Length = 4) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND NOP DQ WRITE A WRITE B NOP NOP NOP DIN A0 DIN B0 DIN B1 DIN B2 DIN B3 NOP NOP NOP The Read command that interrupts a write burst without auto precharge function should be issued one cycle after the clock edge in which the last data-in element is registered. In order to avoid data contention, input data must be removed from the DQs at least one clock cycle before the first read data appears on the outputs (refer to the following figure). Once the Read command is registered, the data inputs will be ignored and writes will not be executed. Figure 12. Write Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND NOP WRITE A READ B CAS# Latency=2 tCK2, DQ DIN A0 don’t care CAS# Latency=3 tCK3, DQ DIN A0 don’t care NOP don’t care NOP NOP NOP NOP DOUT B0 DOUT B1 DOUT B2 DOUT B3 DOUT B0 DOUT B1 DOUT B2 NOP DOUT B3 Input data must be removed from the DQ at least one clock cycle before the Read data appears on the outputs to avoid data contention The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function should be issued m cycles after the clock edge in which the last data-in element is registered, where m equals tWR/tCK rounded up to the next whole number. In addition, the DQM signals must be used to mask input data, starting with the clock edge following the last data-in element and ending with the clock edge on which the BankPrecharge/PrechargeAll command is entered (refer to the following figure). NDS66Pv0.8-64Mb(x16)20180927 12 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 13. Write to Precharge T0 T1 T2 T3 T4 T5 T6 T7 CLK DQM tRP COMMAND WRITE NOP NOP Bank Col n ADDRESS NOP Precharge NOP Activate NOP ROW Bank (s) tWR DIN n DQ DIN N+1 Don’t Care Note: The LDQM/UDQM can remain low in this example if the length of the write burst is 1 or 2. 7 Write and AutoPrecharge command (RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "H", A0-A7 = Column Address) The Write and AutoPrecharge command performs the precharge operation automatically after the write operation. Once this command is given, any subsequent command cannot occur within a time delay of {(burst length -1) + tWR + tRP(min.)}. At full-page burst, only the write operation is performed in this command and the auto precharge function is ignored. Figure 14. Burst Write with Auto-Precharge (Burst Length = 2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 CLK COMMAND Bank A Activate NOP NOP WRITE A Auto Precharge NOP NOP NOP NOP NOP Bank A Activate tDAL DQ DIN A0 DIN A1 tDAL=tWR+tRP 8 Begin AutoPrecharge Bank can be reactivated at completion of tDAL Mode Register Set command (RAS# = "L", CAS# = "L", WE# = "L", A0-A11 = Register Data) The mode register stores the data for controlling the various operating modes of SDRAM. The Mode Register Set command programs the values of CAS latency, Addressing Mode and Burst Length in the Mode register to make SDRAM useful for a variety of different applications. The default values of the Mode Register after power-up are undefined; therefore, this command must be issued at the power-up sequence. The state of pins A0~A9 and A11 in the same cycle is the data written to the mode register. Two clock cycles are required to complete the write in the mode register (refer to the following figure). The contents of the mode register can be changed using the same command and the clock cycle requirements during operation as long as all banks are in the idle state. NDS66Pv0.8-64Mb(x16)20180927 13 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Table 5. Mode Register Bitmap BA1 BA0 RFU* 0 A9 0 1 A11 A10 RFU* A9 WBL Write Burst Length Burst Single Bit A8 A7 Test Mode A8 0 1 0 A7 0 0 1 A6 A5 A4 CAS Latency A3 BT Test Mode Normal Vendor Use Only Vendor Use Only A2 A1 A0 Burst Length A3 0 1 Burst Type Sequential Interleave A6 0 0 0 0 1 A5 A4 CAS Latency A2 A1 A0 Burst Length 0 0 Reserved 0 0 0 1 0 1 Reserved 0 0 1 2 1 0 2 clocks 0 1 0 4 1 1 3 clocks 0 1 1 8 0 0 Reserved 1 1 1 Full Page (Sequential) All others Reserved All others Reserved *Note: RFU (Reserved for future use) should stay “0” during MRS cycle. Figure 15. Mode Register Set Cycle T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 CLK CKE tMRD CS# RAS# CAS# WE# BA0,1 A10 Address Key A0-A9, A11 DQM tRP DQ Hi-Z PrechargeAll NDS66Pv0.8-64Mb(x16)20180927 Mode Register Set Command 14 Any Command Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P • Burst Length Field (A2~A0) This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be 2, 4, 8, or full page. Table 6. Burst Length Field A2 A1 A0 Burst Length 0 0 0 1 0 0 1 2 0 1 0 4 0 1 1 8 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Full Page • Burst Type Field (A3) The Burst Type can be one of two modes, Interleave Mode or Sequential Mode. Table 7. Burst Type Field A3 Burst Type 0 Sequential 1 Interleave • Burst Definition, Addressing Sequence of Sequential and Interleave Mode Table 8. Burst Definition Burst Length 2 4 8 Full page Start Address A2 A1 A0 X X 0 X X 1 X 0 0 X 0 1 X 1 0 X 1 1 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 location = 0-255 NDS66Pv0.8-64Mb(x16)20180927 Sequential 0, 1 1, 0 0, 1, 2, 3 1, 2, 3, 0 2, 3, 0, 1 3, 0, 1, 2 0, 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7, 0 2, 3, 4, 5, 6, 7, 0, 1 3, 4, 5, 6, 7, 0, 1, 2 4, 5, 6, 7, 0, 1, 2, 3 5, 6, 7, 0, 1, 2, 3, 4 6, 7, 0, 1, 2, 3, 4, 5 7, 0, 1, 2, 3, 4, 5, 6 n, n+1, n+2, n+3, …255, 0, 1, 2, … n-1, n, … 15 Interleave 0, 1 1, 0 0, 1, 2, 3 1, 0, 3, 2 2, 3, 0, 1 3, 2, 1, 0 0, 1, 2, 3, 4, 5, 6, 7 1, 0, 3, 2, 5, 4, 7, 6 2, 3, 0, 1, 6, 7, 4, 5 3, 2, 1, 0, 7, 6, 5, 4 4, 5, 6, 7, 0, 1, 2, 3 5, 4, 7, 6, 1, 0, 3, 2 6, 7, 4, 5, 2, 3, 0, 1 7, 6, 5, 4, 3, 2, 1, 0 Not Supported 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P • CAS Latency Field (A6~A4) This field specifies the number of clock cycles from the assertion of the Read command to the first read whole value satisfying the following formula must be programmed into this field. tCAC(min)  CAS Latency X tCK Table 9. CAS latency Field A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 Reserved 0 1 0 2 clocks 0 1 1 3 clocks 1 X X Reserved • Test Mode field (A8~A7) These two bits are used to enter the test mode and must be programmed to "00" in normal operation. Table 10. Test Mode Field A8 A7 Test Mode 0 0 Normal mode 0 1 Vendor Use Only 1 X Vendor Use Only • Write Burst Length (A9) This bit is used to select the write burst mode. When the A9 bit is "0", the Burst-Read-Burst-Write mode is selected. When the A9 bit is "1", the Burst-Read-Single-Write mode is selected. Table 11. Write Burst Length A9 Write Burst Mode 0 Burst-Read-Burst-Write 1 Burst-Read-Single-Write Note: A10 and BA0, 1 should stay “L” during mode set cycle. • Extended Mode Register Bitmap Table 12. Extended Mode Register Bitmap BA1 BA0 A11 A10 0 1 0 0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 0 0 0 0 0 0 0 0 DS 0 A1 Drive Strength 0 Full 1 Weak NDS66Pv0.8-64Mb(x16)20180927 16 Address Field Extended Mode Register 64Mb (x16) - SDR Synchronous DRAM 9 4Mx16 – NDS66P No-Operation command (RAS# = "H", CAS# = "H", WE# = "H") The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS# is Low). This prevents unwanted commands from being registered during idle or wait states. 10 Burst Stop command (RAS# = "H", CAS# = "H", WE# = "L") The Burst Stop command is used to terminate either fixed-length or full-page bursts. This command is only effective in a read/write burst without the auto precharge function. The terminated read burst ends after a delay equal to the CAS latency (refer to the following figure). The termination of a write burst is shown in the following figure. Figure 16. Termination of a Burst Read Operation (Burst Length ＞ 4, CAS# Latency = 2, 3) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND READ A NOP NOP NOP Burst Stop DOUT A1 DOUT A2 DOUT A3 DOUT A0 DOUT A1 DOUT A2 NOP NOP NOP NOP The burst ends after a delay equal to the CAS# Latency CAS# Latency=2 tCK2, DQ DOUT A0 CAS# Latency=3 tCK3, DQ DOUT A3 Figure 17. Termination of a Burst Write Operation (Burst Length = X) T0 T1 T2 T3 T4 T5 T6 T7 T8 CLK COMMAND NOP DQ WRITE A NOP NOP Burst Stop DIN A0 DIN A1 DIN A2 don’t care NOP NOP NOP NOP 11 Device Deselect command (CS# = "H") The Device Deselect command disables the command decoder so that the RAS#, CAS#, WE# and Address inputs are ignored, regardless of whether the CLK is enabled. This command is similar to the No Operation command. NDS66Pv0.8-64Mb(x16)20180927 17 64Mb (x16) - SDR Synchronous DRAM 12 4Mx16 – NDS66P AutoRefresh command (RAS# = "L", CAS# = "L", WE# = "H", CKE = "H", A0-A11 = Don't care) The AutoRefresh command is used during normal operation of the SDRAM and is analogous to CAS#-beforeRAS# (CBR) Refresh in conventional DRAMs. This command is non-persistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a "don't care" during an AutoRefresh command. The internal refresh counter increments automatically on every auto refresh cycle to all of the rows. The refresh operation must be performed 4096 times within 16, 32, or 64ms depending on the operating temperature. The time required to complete the auto refresh operation is specified by tRC(min.). To provide the AutoRefresh command, all banks need to be in the idle state and the device must not be in power down mode (CKE is high in the previous cycle). This command must be followed by NOPs until the auto refresh operation is completed. The precharge time requirement, tRP(min), must be met before successive auto refresh operations are performed. 13 SelfRefresh Entry command (RAS# = "L", CAS# = "L", WE# = "H", CKE = "L", A0-A11 = Don't care) The SelfRefresh is another refresh mode available in the SDRAM. It is the preferred refresh mode for data retention and low power operation. Once the SelfRefresh command is registered, all the inputs to the SDRAM become "don't care" with the exception of CKE, which must remain LOW. The refresh addressing and timing is internally generated to reduce power consumption. The SDRAM may remain in SelfRefresh mode for an indefinite period. The SelfRefresh mode is exited by restarting the external clock and then asserting HIGH on CKE (SelfRefresh Exit command). 14 SelfRefresh Exit command This command is used to exit from the SelfRefresh mode. Once this command is registered, NOP or Device Deselect commands must be issued for t XSR(min.) because time is required for the completion of any bank currently being internally refreshed. If auto refresh cycles in bursts are performed during normal operation, a burst of 4096 auto refresh cycles should be completed just prior to entering and just after exiting the SelfRefresh mode. 15 Clock Suspend Mode Entry / PowerDown Mode Entry command (CKE = "L") When the SDRAM is operating the burst cycle, the internal CLK is suspended (masked) from the subsequent cycle by issuing this command (asserting CKE "LOW"). The device operation is held intact while CLK is suspended. On the other hand, when all banks are in the idle state, this command performs entry into the PowerDown mode. All input and output buffers (except the CKE buffer) are turned off in the PowerDown mode. The device may not remain in the Clock Suspend or PowerDown state longer than the refresh period (16, 32, or 64ms depending on operating temperature) since the command does not perform any refresh operations. 16 Clock Suspend Mode Exit / PowerDown Mode Exit command (CKE= "H") When the internal CLK has been suspended, the operation of the internal CLK is reinitiated from the subsequent cycle by providing this command (asserting CKE "HIGH", the command should be NOP or deselect). When the device is in the PowerDown mode, the device exits this mode and all disabled buffers are turned on to the active state. tPDE (min.) is required when the device exits from the PowerDown mode. Any subsequent commands can be issued after one clock cycle from the end of this command. NDS66Pv0.8-64Mb(x16)20180927 18 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P 17 Data Write / Output Enable, Data Mask / Output Disable command (DQM = "L", "H") During a write cycle, the DQM signal functions as a Data Mask and can control every word of the input data. During a read cycle, the DQM functions as the controller of output buffers. DQM is also used for device selection, byte selection and bus control in a memory system. NDS66Pv0.8-64Mb(x16)20180927 19 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Table 13. Absolute Maximum Rating Symbol Item Values VIN, VOUT Input, Output Voltage - 1.0 ~ 4.6 V 1 VDD, VDDQ Power Supply Voltage -1.0 ~ 4.6 V 1 Extended Test 0 ~ 70 °C 1 Industrial -40 ~ 85 °C 1 Automotive -40 ~ 105 °C 1 TA Ambient Temperature Unit Note TSTG Storage Temperature - 55 ~ 150 °C 1 PD Power Dissipation 1 W 1 IOS Short Circuit Output Current 50 mA 1 Table 14. Recommended D.C. Operating Conditions (TA = -40~85°C and -40~105°C) Symbol Parameter Min. Typ. Max. Unit Note VDD Power Supply Voltage 3.0 3.3 3.6 V 2 VDDQ Power Supply Voltage(for I/O Buffer) 3.0 3.3 3.6 V 2 VIH LVTTL Input High Voltage 2.0 － VDDQ+0.3 V 2 VIL LVTTL Input Low Voltage - 0.3 － 0.8 V 2 IIL Input Leakage Current ( 0V  VIN  VDD, All other pins not under test = 0V ) - 10 － 10 A IOL Output Leakage Current Output disable, 0V  VOUT  VDDQ) - 10 － 10 A VOH LVTTL Output "H" Level Voltage ( IOUT = -2mA ) 2.4 － － V VOL LVTTL Output "L" Level Voltage ( IOUT = 2mA ) － － 0.4 V Table 15. Capacitance (VDD = 3.3V, f = 1MHz, TA = 25°C) Symbol CI CI/O Parameter Min. Max. Unit Input Capacitance 1 4 pF Input/Output Capacitance 2 5 pF Note: These parameters are periodically sampled and are not 100% tested. NDS66Pv0.8-64Mb(x16)20180927 20 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Table 16. D.C. Characteristics (VDD = 3.3V  0.3V, TA = -40~85°C) Description/Test condition Symbol Operating Current tRC  tRC(min), Outputs Open One bank active Precharge Standby Current in non-power down mode tCK = 15ns, CS#  VIH(min), CKE  VIH Input signals are changed every 2clks Precharge Standby Current in non-power down mode tCK = , CLK  VIL(max), CKE  VIH Precharge Standby Current in power down mode tCK = 15ns, CKE  VIL(max) Precharge Standby Current in power down mode tCK = , CKE  VIL(max) Active Standby Current in non-power down mode tCK = 15ns, CKE  VIH(min), CS#  VIH(min) Input signals are changed every 2clks Active Standby Current in non-power down mode CKE  VIH(min), CLK  VIL(max), tCK =  Operating Current (Burst mode) tCK =tCK(min), Outputs Open, Multi-bank interleave Refresh Current tRC  tRC(min) Self Refresh Current CKE  0.2V ; for other inputs VIH≧VDD - 0.2V, VIL  0.2V NDS66Pv0.8-64Mb(x16)20180927 21 -5I (200) -6I (166) Unit Note Max. 3 IDD1 55 50 IDD2N 25 25 IDD2NS 12 12 IDD2P 2 2 IDD2PS 2 2 IDD3N 30 30 IDD3NS 25 25 IDD4 80 75 3, 4 IDD5 65 60 3 IDD6 2 2 mA 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Table 16.1. D.C. Characteristics (VDD = 3.3V  0.3V, TA = -40~105°C) -5B (200) -6B (166) Description/Test condition Symbol Unit Note Max. Operating Current 3 66 60 tRC  tRC(min), Outputs Open IDD1 One bank active Precharge Standby Current in non-power down mode tCK = 15ns, CS#  VIH(min), CKE  VIH Input signals are changed every 2clks Precharge Standby Current in non-power down mode tCK = , CLK  VIL(max), CKE  VIH Precharge Standby Current in power down mode tCK = 15ns, CKE  VIL(max) Precharge Standby Current in power down mode tCK = , CKE  VIL(max) Active Standby Current in non-power down mode tCK = 15ns, CKE  VIH(min), CS#  VIH(min) Input signals are changed every 2clks Active Standby Current in non-power down mode CKE  VIH(min), CLK  VIL(max), tCK =  Operating Current (Burst mode) tCK =tCK(min), Outputs Open, Multi-bank interleave Refresh Current tRC  tRC(min) IDD2N 30 30 IDD2NS 15 15 IDD2P 2.4 2.4 IDD2PS 2.4 2.4 IDD3N 36 36 IDD3NS 30 30 IDD4 96 90 3, 4 IDD5 78 72 3 IDD6 4 4 Self Refresh Current CKE  0.2V ; for other inputs VIH≧VDD - 0.2V, VIL  0.2V NDS66Pv0.8-64Mb(x16)20180927 22 mA 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Table 17. Electrical Characteristics and Recommended A.C. Operating Conditions (VDD = 3.3V±0.3V, TA = -40~85°C) (Note: 5, 6, 7, 8) Symbol tRC tRCD tRP tRRD tRAS -5I (200) A.C. Parameter Row cycle time (same bank) Min. Max. Min. Max. 55 - 60 - 15 - 18 - 15 - 18 - 10 - 12 - 40 100K 42 100K RAS# to CAS# delay (same bank) Precharge to refresh/row activate command (same bank) Row activate to row activate delay (different banks) Row activate to precharge time (same bank) -6I (166) Unit Note ns tWR Write recovery time 2 - 2 - tCCD CAS# to CAS# Delay time 1 - 1 - CL* = 2 - - tCK Clock cycle time 9 - CL* = 3 5 - 6 - tCH Clock high time 2 - 2.5 - 10 tCL Clock low time 2 - 2.5 - 10 10 tAC tCK Access time from CLK CL* = 2 - - - 6 (positive edge) CL* = 3 - 4.5 - 5.4 9 ns tOH Data output hold time 2 - 2.5 - tLZ Data output low impedance 0 - 0 - tHZ Data output high impedance - 4.5 - 5.4 8 tIS Data/Address/Control Input set-up time 1.5 - 1.5 - 10 tIH Data/Address/Control Input hold time 0.8 - 0.8 - 10 tPDE Power Down Exit set-up time tIS+tCK - tIS+tCK - tMRD Mode Register Set Command Cycle Time 2 - 2 - tCK tREFI Average Refresh Interval Time - 15.6 - 15.6 s tXSR Exit Self-Refresh to Read Command tRC+tIS - tRC+tIS - ns NDS66Pv0.8-64Mb(x16)20180927 23 9 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Table 17.1. Electrical Characteristics and Recommended A.C. Operating Conditions (VDD = 3.3V±0.3V, TA = -40~105°C) (Note: 5, 6, 7, 8) Symbol -5B (200) A.C. Parameter -6B (166) Min. Max. Min. Max. tRC Row cycle time (same bank) 55 - 60 - tRCD RAS# to CAS# delay (same bank) 15 - 18 - 15 - 18 - 10 - 12 - 40 100K 42 100K tRP tRRD tRAS Precharge to refresh/row activate command (same bank) Row activate to row activate delay (different banks) Row activate to precharge time (same bank) Unit Note ns tWR Write recovery time 2 - 2 - tCCD CAS# to CAS# Delay time 1 - 1 - CL* = 2 - - 10 - tCK Clock cycle time CL* = 3 5 - 6 - tCH Clock high time 2 - 2.5 - 10 tCL Clock low time 2 - 2.5 - 10 Access time from CLK (positive edge) CL* = 2 - - - 6.5 10 tAC CL* = 3 - 4.5 - 5.4 tOH Data output hold time 2 - 2 - tLZ Data output low impedance 0 - 0 - tHZ Data output high impedance - 4.5 - 5.4 8 tIS Data/Address/Control Input set-up time 1.5 - 1.5 - 10 tIH Data/Address/Control Input hold time 0.8 - 0.8 - 10 tPDE Power Down Exit set-up time tIS+tCK - tIS+tCK - tMRD Mode Register Set Command Cycle Time 2 - 2 - tCK tREFI Average Refresh Interval Time - 3.9 - 3.9 s tXSR Exit Self-Refresh to any Command tRC+tIS - tRC+tIS - ns tCK 9 ns 9 * CL is CAS Latency Notes: 1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Absolute maximum DC requirements contain stress ratings only. Functional operation at the absolute maximum limits is not implied or guaranteed. Extended exposure to maximum ratings may affect device reliability. 2. All voltages are referenced to VSS. VIH (Max) = 4.6V for pulse width ≦3ns. VIL(Min) = -1.0V for pulse width ≦ 3ns. 3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and tRC. Input signals are changed one time during every 2 tCK. 4. These parameters depend on the output loading. Specified values are obtained with the output open. 5. Power-up sequence is described in Note 11. 6. A.C. Test Conditions NDS66Pv0.8-64Mb(x16)20180927 24 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Table 18. LVTTL Interface Reference Level of Output Signals 1.4V / 1.4V Output Load Reference to the Under Output Load (B) Input Signal Levels 2.4V / 0.4V Transition Time (Rise and Fall) of Input Signals 1ns Reference Level of Input Signals 1.4V Figure 18.1 LVTTL D.C. Test Load (A) Figure 18.2 LVTTL A.C. Test Load (B) 3.3V 1.4V 50Ω 1.2KΩ Output Output 30pF Z0=50Ω 870Ω 30pF 7. Transition times are measured between VIH and VIL. Transition (rise and fall) of input signals are in a fixed slope (1 ns). 8. tHZ defines the time in which the outputs achieve the open circuit condition and are not at reference levels. 9. If clock rising time is longer than 1 ns, ( t R / 2 -0.5) ns should be added to the parameter. 10. Assumed input rise and fall time tT ( tR & tF ) = 1 ns If tR or tF is longer than 1 ns, transient time compensation should be considered, i.e., [(tr + tf)/2 - 1] ns should be added to the parameter. 11. Power up Sequence Power up must be performed in the following sequence. 1) Power must be applied to VDD and VDDQ(simultaneously) when CKE= “L”, DQM= “H” and all input signals are held "NOP" state . 2) Start clock and maintain stable condition for minimum 200 s, then bring CKE= “H” and, it is recommended that DQM is held "HIGH" (VDD levels) to ensure DQ output is in high impedance. 3) All banks must be precharged. 4) Extended Mode Register set command and Mode Register Set command must be asserted to initialize the Mode register. 5) A minimum of 2 Auto-Refresh dummy cycles must be required to stabilize the internal circuitry of the device. * The Auto Refresh command can be issue before or after Mode Register Set command NDS66Pv0.8-64Mb(x16)20180927 25 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Timing Waveforms Figure 19. AC Parameters for Write Timing (Burst Length=4) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tCH tCL CKE tIS tIS Begin Auto Precharge Bank A tIH Begin Auto Precharge Bank B CS# RAS# CAS# WE# BA0,1 tIH A10 RAx RBx RAy tIS A0-A9, A11 RAx CAx RBx CBx RAy CAy DQM tRCD tDAL tIS tRC DQ Ax0 Activate Command Bank A Ax1 Write with Auto Precharge Command Bank A Ax2 Activate Command Bank B tWR tIH Hi-Z Ax3 Bx0 Bx1 Bx2 Write with Auto Precharge Command Bank B Bx3 Ay0 Activate Command Bank A Write Command Bank A Ay1 Ay2 Ay3 Precharge Command Bank A Don’t Care NDS66Pv0.8-64Mb(x16)20180927 26 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 20. AC Parameters for Read Timing (Burst Length=2, CAS# Latency=2) T0 CLK T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 tCH tCL CKE tIS Begin Auto Precharge Bank B tIS tIH tIH CS# RAS# CAS# WE# BA0,1 tIH A10 RAx RBx RAy tIS A0-A9, A11 RAx CAx RBx CBx RAy tRRD tRAS DQM tRC tAC tRCD DQ Hi-Z tRP tHZ tLZ Ax0 Ax1 Bx0 tHZ tOH Activate Command Bank A Read Command Bank A Activate Command Bank B Bx1 Read with Precharge Auto Precharge Command Command Bank A Bank B Activate Command Bank A Don’t Care NDS66Pv0.8-64Mb(x16)20180927 27 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 21. Auto Refresh (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx tRP tRC tRC CAx tRCD DQM DQ Ax0 Precharge All Command Auto Refresh Command Activate Command Bank A Auto Refresh Command Ax1 Read Command Bank A Don’t Care NDS66Pv0.8-64Mb(x16)20180927 28 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 22. Power on Sequence and Auto Refresh T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High Level Is reguired Minimum for 2 Refresh Cycles are required CS# RAS# CAS# WE# BA0=L BA1=L BA0=H BA1=L BA0,1 A10 Address Key A0-A9, A11 DQM DQ tRP tMRD tMRD Hi-Z Precharge All Command Inputs must be Stable for 200μs Mode Register Extended Mode Register Set Command Set Command 1st Auto Refresh(*) Command 2nd Auto Refresh(*) Command Don’t Care Note(*): The Auto Refresh command can be issue before or after Mode Register Set command NDS66Pv0.8-64Mb(x16)20180927 Any Command 29 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 23. Self Refresh Entry & Exit Cycle T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 CLK *Note 2 CKE tXSR *Note 5 *Note 1 *Note 3,4 *Note 8 tPDE tIS tIH *Note 6 tIS *Note 7 CS# RAS# *Note 9 CAS# WE# BA0,1 A10 A0-A9, A11 DQM DQ Hi-Z Hi-Z Self Refresh Exit Self Refresh Entry Auto Refresh Don’t Care Note: To Enter SelfRefresh Mode 1. CS#, RAS# & CAS# with CKE should be low at the same clock cycle. 2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE. 3. The device remains in SelfRefresh mode as long as CKE stays "low". 4. Once the device enters SelfRefresh mode, minimum tRAS is required before exit from SelfRefresh. 5. 6. 7. 8. 9. To Exit SelfRefresh Mode System clock restart and be stable before returning CKE high. Enable CKE and CKE should be set high for valid setup time and hold time. CS# starts from high. Minimum tXSR is required after CKE going high to complete SelfRefresh exit. 4096 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the system uses burst refresh. NDS66Pv0.8-64Mb(x16)20180927 30 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 24.1. Clock Suspension During Burst Read (Using CKE) (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx CAx DQM DQ tHZ Hi-Z Ax0 Activate Command Bank A Read Command Bank A Ax1 Clock Suspend 1 Cycle Ax2 Ax3 Clock Suspend 2 Cycles Clock Suspend 3 Cycles Don’t Care NDS66Pv0.8-64Mb(x16)20180927 31 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 24.2. Clock Suspension During Burst Read (Using CKE) (Burst Length=4, CAS# Latency=3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx CAx DQM DQ tHZ Hi-Z Ax0 Activate Command Bank A Read Command Bank A Ax1 Clock Suspend 1 Cycle Ax2 Clock Suspend 2 Cycles Ax3 Clock Suspend 3 Cycles Don’t Care NDS66Pv0.8-64Mb(x16)20180927 32 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 25. Clock Suspension During Burst Write (Using CKE) (Burst Length=4) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx CAx DQM DQ Hi-Z DAx0 Activate Command Bank A DAx1 Clock Suspend 1 Cycle Write Command Bank A NDS66Pv0.8-64Mb(x16)20180927 DAx2 Clock Suspend 2 Cycles DAx3 Clock Suspend 3 Cycles Don’t Care 33 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 26. Power Down Mode and Clock Suspension (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 CLK T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 tIH tIS tPDE CKE Valid CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx CAx DQM DQ tHZ Hi-Z Ax0 ACTIVE Activate Read STANDBY Command Command Bank A Bank A Power Down Power Down Mode Exit Mode Entry NDS66Pv0.8-64Mb(x16)20180927 Ax1 Clock Suspension Start Ax2 Ax3 Clock Suspension End Precharge Command Bank A Power Down Mode Entry 34 PRECHARGE STANDBY Power Down Mode Exit Any Command Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 27.1. Random Column Read (Page within same Bank) (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAw A0-A9, A11 RAw RAz CAw CAx CAy RAz CAz DQM DQ Hi-Z Aw0 Activate Command Bank A Read Command Bank A Aw1 Aw2 Aw3 Read Command Bank A Ax0 Ax1 Ay0 Ay1 Ay2 Ay3 Precharge Command Bank A Read Command Bank A Az0 Activate Command Bank A Read Command Bank A Don’t Care NDS66Pv0.8-64Mb(x16)20180927 35 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 27.2. Random Column Read (Page within same Bank) (Burst Length=4, CAS# Latency=3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAw A0-A9, A11 RAw RAz CAw CAx CAy RAz CAz DQM DQ Hi-Z Aw0 Activate Command Bank A Read Command Bank A Aw1 Aw2 Read Command Bank A Aw3 Ax0 Ax1 Ay0 Ay1 Ay2 Precharge Command Bank A Read Command Bank A Ay3 Activate Command Bank A Read Command Bank A Don’t Care NDS66Pv0.8-64Mb(x16)20180927 36 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 28. Random Column Write (Page within same Bank) (Burst Length=4) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RBw A0-A9, A11 RBw RBz CBw CBx CBy RBz CBz DQM DQ Hi-Z DBw0 DBw1 DBw2 DBw3 DBx0 Activate Command Bank B Write Command Bank B DBx1 Write Command Bank B DBy0 DBy1 DBy2 DBy3 DBz0 Precharge Command Bank B Write Command Bank B Activate Command Bank B DBz1 Write Command Bank B Don’t Care NDS66Pv0.8-64Mb(x16)20180927 37 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 29.1. Random Row Read (Interleaving Banks) (Burst Length=8, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High CS# RAS# CAS# WE# BA0,1 A10 RBx A0-A9, A11 RBx CBx RBy RAx CAx RBy tAC tRCD DQM DQ RAx CBy tRP Hi-Z Bx0 Activate Command Bank B Bx1 Read Command Bank B NDS66Pv0.8-64Mb(x16)20180927 Bx2 Bx3 Bx4 Bx5 Activate Command Bank A Bx6 Bx7 Ax0 Read Command Bank A Precharge Command Bank B 38 Ax1 Ax2 Ax3 Activate Command Bank B Ax4 Ax5 Ax6 Ax7 Read Command Bank B Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 29.2. Random Row Read (Interleaving Banks) (Burst Length=8, CAS# Latency=3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High CS# RAS# CAS# WE# BA0,1 A10 RBx A0-A9, A11 RBx CBx RBy RAx CAx RBy tAC tRCD DQM DQ RAx CBy tRP Hi-Z Bx0 Activate Command Bank B Read Command Bank B Bx1 Bx2 Bx3 Activate Command Bank A Bx4 Bx5 Bx6 Read Command Bank A Bx7 Ax0 Precharge Command Bank B Ax1 Ax2 Ax3 Activate Command Bank B Ax4 Ax5 Ax6 Read Command Bank B Ax7 By0 Precharge Command Bank A Don’t Care NDS66Pv0.8-64Mb(x16)20180927 39 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 30. Random Row Write (Interleaving Banks) (Burst Length=8) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx CAx RAy RBx CBx tRCD DQM DQ RBx RAy tWR* CAy tRP tWR* Hi-Z DAx0 Activate Command Bank A DAx1 DAx2 DAx3 Write Command Bank A DAx4 DAx5 DAx6 Activate Command Bank B DAx7 DBx0 Write Command Bank B Precharge Command Bank A DBx4 DBx5 DBx6 Activate Command Bank A DBx7 DAy0 DAy1 DAy2 Write Command Bank A DAy3 Precharge Command Bank B Don’t Care *tWR>tWR (min.) NDS66Pv0.8-64Mb(x16)20180927 DBx1 DBx2 DBx3 40 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 31.1. Read and Write Cycle (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx CAx CAy CAz DQM DQ Hi-Z Ax0 Activate Command Bank A Read Command Bank A Ax1 Ax2 Ax3 DAy0 DAy1 Write Command Bank A DAy3 The Write Data is Masked with a Zero Clock Latency Az0 Read Command Bank A Az1 Az3 The Read Data is Masked with a Two Clock Latency Don’t Care NDS66Pv0.8-64Mb(x16)20180927 41 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 31.2. Read and Write Cycle (Burst Length=4, CAS# Latency=3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx CAx CAy CAz DQM DQ Hi-Z Ax0 Activate Command Bank A Read Command Bank A NDS66Pv0.8-64Mb(x16)20180927 Ax1 Ax2 Ax3 DAy0 DAy1 Write Command Bank A 42 DAy3 The Write Data is Masked with a Zero Clock Read Latency Command Bank A Az0 Az1 Az3 The Read Data is Masked with a Two Clock Latency Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 32.1. Interleaving Column Read Cycle (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T5 T6 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBx CAy RBx CBw CBx Ax3 Bw0 CBy CAy CBz tRCD DQM tAC DQ Hi-Z Ax0 Activate Command Bank A Read Command Bank A Ax1 Activate Command Bank B Ax2 Read Command Bank B Bw1 Read Command Bank B Bx0 Bx1 Read Command Bank B By0 By1 Read Command Bank A Ay0 Ay1 Read Command Bank B Bz0 Bz1 Precharge Command Bank A Bz2 Bz3 Precharge Command Bank B Don’t Care NDS66Pv0.8-64Mb(x16)20180927 43 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 32.2. Interleaved Column Read Cycle (Burst Length=4, CAS# Latency=3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBx CAx RBx CBx CBy CBz CAy tRCD DQM tAC DQ Hi-Z Ax0 Activate Command Bank A Read Command Bank A Activate Command Bank B NDS66Pv0.8-64Mb(x16)20180927 Ax1 Ax2 Read Command Bank B Ax3 Bx0 Read Command Bank B Bx1 By0 Read Command Bank B By1 Bz0 Read Command Bank A Bz1 Ay0 Precharge Command Bank B Ay1 Ay2 Ay3 Precharge Command Bank A Don’t Care 44 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 33. Interleaved Column Write Cycle (Burst Length=4) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBw CAx RBw CBw CBx CBy CAy CBz tWR tRCD tWR DQM tRRD>tRRD (min) DQ Hi-Z DAx0 Activate Command Bank A DAx1 DAx2 DAx3 DBw0 DBw1 DBx0 DBx1 DBy0 Write Command Bank A Activate Command Bank B NDS66Pv0.8-64Mb(x16)20180927 Write Command Bank B Write Command Bank B DBy1 Write Command Bank B 45 DAy0 DAy1 DBz0 Write Command Bank A DBz1 DBz2 Write Command Bank B Precharge Command Bank A DBz3 Precharge Command Bank B Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 34.1. Auto Precharge after Read Burst (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE Begin Auto Precharge Bank B High Begin Auto Precharge Bank A CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBx CAx RBy RBx CBx CAy RBy CBy RAz tRP DQM DQ RAz Hi-Z Ax0 Activate Command Bank A Read Command Bank A Ax1 Activate Command Bank B Ax2 Ax3 Read with Auto Precharge Command Bank B Bx0 Bx1 Bx2 Bx3 Read with Auto precharge Command Bank A Ay0 Ay1 Ay2 Activate Command Bank B Ay3 By0 By1 By2 Read with Activate Auto Precharge Command Command Bank A Bank B Don’t Care NDS66Pv0.8-64Mb(x16)20180927 46 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 34.2. Auto Precharge after Read Burst (Burst Length=4, CAS# Latency=3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE Begin Auto Precharge Bank A Begin Auto Precharge Bank B High CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBy RBx CAx RBx CBx CAy RBy CBy tRP DQM DQ Hi-Z Ax0 Activate Command Bank A Read Command Bank A Activate Command Bank B NDS66Pv0.8-64Mb(x16)20180927 Ax1 Ax2 Read with Auto Precharge Command Bank B Ax3 Bx0 Bx1 Bx2 Read with Auto Precharge Command Bank A Bx3 Ay0 Ay1 Activate Command Bank B Ay2 Ay3 By0 By1 By2 Read with Auto Precharge Command Bank B Don’t Care 47 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 35. Auto Precharge after Write Burst (Burst Length=4) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE Begin Auto Precharge Bank A Begin Auto Precharge Bank B High CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBy RBx CAx RBx CBx CAy RBy CBy tDAL DQM DQ Hi-Z DAx0 DAx1 Activate Command Bank A DAx2 DAx3 Write Command Bank A Activate Command Bank B NDS66Pv0.8-64Mb(x16)20180927 DBx0 DBx1 DBx2 Write with Auto Precharge Command Bank B DBx3 DAy0 DAy1 DAy2 Write with Auto Precharge Command Bank A DAy3 DBy0 DBy1 DBy2 Activate Command Bank B DBy3 Write with Auto Precharge Command Bank B Don’t Care 48 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 36.1. Full Page Read Cycle (Burst Length=Full Page, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBy RBx CAx RBx CBx RBy tRP DQM DQ Hi-Z Ax Activate Command Bank A Read Command Bank A Ax+1 Ax+2 Ax-2 Ax-1 Ax Ax+1 Bx Bx+1 Bx+2 Bx+3 The burst counter wraps Activate Read Command from the highest order Command page address back to zero Bank B Bank B during this time interval Full Page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues Bursting beginning with the starting address NDS66Pv0.8-64Mb(x16)20180927 49 Bx+4 Bx+5 Bx+6 Precharge Command Bank B Burst Stop Command Activate Command Bank B Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 36.2. Full Page Read Cycle (Burst Length=Full Page, CAS# Latency=3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBy RBx CAx RBx CBx RBy tRP DQM DQ Hi-Z Ax Activate Command Bank A Read Command Bank A Activate Command Bank B Ax+1 Ax+2 Ax-2 Ax-1 Ax Ax+1 Bx Bx+1 Bx+2 Read Command Bank B The burst counter wraps from the highest order page address back to zero during this time interval Bx+4 50 Bx+5 Precharge Command Bank B Burst Stop Command Full Page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues Bursting beginning with the starting address NDS66Pv0.8-64Mb(x16)20180927 Bx+3 Activate Command Bank B Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 37. Full Page Write Cycle (Burst Length=Full Page) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RBy RBx RBy CBx RBx CAx DQM Data is ignored DQ Hi-Z DAx Activate Command Bank A DAx+1 Write Command Bank A DAx+2 DAx+3 DAx-1 DAx DAx+1 Activate Command Bank B The burst counter wraps from the highest order page address back to zero during this time interval NDS66Pv0.8-64Mb(x16)20180927 DBx DBx+1 DBx+2 DBx+3 DBx+4 DBx+5 Write Command Bank B Full Page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address 51 Precharge Command Bank B Burst Stop Command Activate Command Bank B Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 38. Byte Read and Write Operation (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx CAx CAy CAz LDQM UDQM DQ0-DQ7 Ax0 DQ8-DQ15 Activate Command Bank A Read Command Bank A Ax1 Ax2 Ax1 Ax2 Upper Byte is masked DAy1 Ax3 Lower Byte is masked DAy0 DAy1 Write Command Bank A Day2 DAy3 Upper Byte is masked Az0 Read Command Bank A Az1 Az2 Az1 Az2 Lower Byte is masked Az3 Lower Byte is masked Don’t Care NDS66Pv0.8-64Mb(x16)20180927 52 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 39. Random Row Read (Interleaving Banks) (Burst Length=4, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE Begin Auto Precharge Bank B Begin Auto Precharge Bank A Begin Auto Precharge Bank B High Begin Auto Precharge Bank A CS# RAS# CAS# WE# BA0,1 A10 RBu A0-A9, A11 RBu RAu CBu RAu CAu RBw RAv RBv RBv CBv tRP RAv CAv RBw tRP tRP DQM DQ Bu0 Activate Command Bank B Bu1 Activate Command Read Bank A Bank B with Auto Precharge NDS66Pv0.8-64Mb(x16)20180927 Bu2 Bu3 Read Bank A with Auto Precharge Au0 Au1 Au2 Au3 Bv0 Activate Command Bank A Activate Command Bank B Read Bank B with Auto Precharge 53 Bv1 Bv2 Bv3 Read Bank A with Auto Precharge Av0 Av1 Av2 Av3 Activate Command Bank B Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 40. Full Page Random Column Read (Burst Length=Full Page, CAS# Latency=2) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx RBx A0-A9, A11 RAx RBx RBw CAx CBx CBy CAy CAz CBz RBw tRP DQM tRRD DQ tRCD Hi-Z Ax0 Activate Command Bank A Ax1 Bx0 Activate Read Command Command Bank B Bank B Read Read Command Command Bank A Bank A NDS66Pv0.8-64Mb(x16)20180927 Ay0 Ay1 Read Command Bank B By0 By1 Read Command Bank A Az0 Az1 Az2 Read Command Bank B Bz0 Bz1 Bz2 Precharge Activate Command Bank B Command (Precharge Temination) Bank B Don’t Care 54 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 41 Full Page Random Column Write (Burst Length=Full Page) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE CS# RAS# CAS# WE# BA0,1 A10 RAx RBx A0-A9, A11 RAx RBx RBw CAx CBx CBy CAy CAz CBz RBw tWR tRP DQM tRRD DQ tRCD Hi-Z DAx0 DAx1 Activate Command Bank A Activate Command Bank B Write Command Bank A DBx0 DAy0 DAy1 DBy0 DBy1 Write Command Bank B Write Command Bank A NDS66Pv0.8-64Mb(x16)20180927 Write Command Bank B DAz0 DAz1 Write Command Bank A DAz2 DBz0 DBz1 Write Command Bank B DBz2 Precharge Activate Command Bank B Command (Precharge Temination) Bank B Write Data are masked 55 Don’t Care 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 42 Precharge Termination of a Burst (Burst Length=4, 8 or Full Page, CAS# Latency=3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK CKE High CS# RAS# CAS# WE# BA0,1 A10 RAx A0-A9, A11 RAx RAy CAx RAz RAy tWR CAy RAz tRP tRP DQM DQ DAx0 DAx1 Activate Command Bank B Precharge Write Command Command Bank A Bank A Precharge Termination of a Write Burst Write Data are masked NDS66Pv0.8-64Mb(x16)20180927 Ay0 Activate Command Bank A Read Command Bank A Ay1 Precharge Command Bank A Ay2 Activate Command Bank A Precharge Termination of a Read Burst Don’t Care 56 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 43. 54 Pin TSOP II Package Outline Drawing Information Symbol A A1 A2 B C D E e HE L L1 S y θ Dimension in inches Min Nom Max ----0.047 0.002 --0.008 0.035 0.039 0.043 0.01 0.014 0.018 0.004 0.006 0.008 0.87 0.875 0.88 0.395 0.400 0.405 --0.031 --0.455 0.463 0.471 0.016 0.02 0.024 0.032 ----0.028 ------0.004 0° 8° --- Notes: 1. Dimension D&E do not include interlead flash. 2. Dimension B does not include dambar protrusion/intrusion. 3. Dimension S includes end flash. 4. Controlling dimension: mm NDS66Pv0.8-64Mb(x16)20180927 57 Dimension in mm Min Nom Max ----1.2 0.05 --0.2 0.9 1.0 1.1 0.25 0.35 0.45 0.12 0.165 0.21 22.09 22.22 22.35 10.03 10.16 10.29 --0.8 --11.56 11.76 11.96 0.4 0.5 0.6 --0.84 ----0.71 ------0.1 0° 8° --- 64Mb (x16) - SDR Synchronous DRAM 4Mx16 – NDS66P Figure 44. 54-Ball FBGA Package 8 x 8 x 1.2mm (max.) Outline Drawing Information Symbol A A1 A2 D E D1 E1 e b F Dimension in inches Min Nom Max --0.047 0.010 0.012 0.014 -0.033 -0.311 0.315 0.319 0.311 0.315 0.319 -0.252 --0.252 --0.031 -0.016 0.018 0.020 -0.126 -- NDS66Pv0.8-64Mb(x16)20180927 58 Dimension in mm Min Nom Max --1.20 0.25 0.30 0.35 -0.85 -7.90 8.00 8.10 7.90 8.00 8.10 -6.40 --6.40 --0.80 -0.40 0.45 0.50 -3.20 --