SS36B

山东晶导微电子有限公司 SS32B THRU SS320B Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3 A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS32 ~ SS320 Simplified outline SMB and symbol MECHANICAL DATA • Case: SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 95m g （0.0034oz） Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols SS32B SS34B SS36B SS38B SS310B SS312B SS315B SS320B Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 3.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 80 A Max Instantaneous Forward Voltage at 3 A VF Maximum DC Reverse Current T a = 25°C T a =100°C IR 0.5 5 0.3 3 mA Typical Junction Capacitance（1） Cj 450 400 pF Typical Thermal Resistance （2） RθJA 60 °C/W Tj -55 ~ +150 °C T stg -55 ~ +150 °C at Rated DC Reverse Voltage Operating Junction Temperature Range Storage Temperature Range 0.55 0.70 0.85 0.95 V （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2017.01 SMB-S-SS32B~SS320B-3A200V Page 1 of 3 山东晶导微电子有限公司 SS32B THRU SS320B Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 3.5 3.0 2.4 1.8 1.2 0.6 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Average Forward Current (A) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 T J =75°C 10 2 SS32B/SS36B T J =25°C 10 0 0 Case Temperature (°C) 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C Junction Capacitance ( pF) 20 10 1.0 SS32B/SS34B SS36B/SS38B SS310B/SS312B SS315B/SS320B 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 200 100 20 SS32B~SS36B SS38B~SS320B 10 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 80 70 60 50 40 8.3 ms Single Half Sine Wave (JEDEC Method) 20 1 500 1.8 90 30 1000 Instaneous Forward Voltage (V) 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Peak Forward Surage Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic 100 Number of Cycles at 60Hz 2017.01 SS38B~SS320B 10 1 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 SS32B THRU SS320B Jingdao Microelectronics PACKAGE OUTLINE SMB Plastic surface mounted package; 2 leads L A A1 C A b D E E1 VM A SMB mechanical data UNIT mm mil A1 L C b 5.59 0.20 1.5 0.305 2.2 3.3 5.08 0.05 0.8 0.152 1.9 155 220 7.9 59 12 87 200 2.0 32 6 75 A E D max 2.44 4.70 3.94 min 2.13 4.06 max 96 185 min 84 130 160 E1 The recommended mounting pad size 2.2 (86) 2.4 (94) 2.8 (110) 2.4 (94) mm Unit ： (mil) 2017.01 702225B0 Marking Type number Marking code SS32B SS32 SS34B SS34 SS36B SS36 SS38B SS38 SS310B SS310 SS312B SS312 SS315B SS315 SS320B SS320 Page 3 of 3