SS14

山东晶导微电子有限公司 SS12 THRU SS120 Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0A PINNING PIN Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS12 ~ SS120 Simplified outline SMA and symbol MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 70mg / 0.0025oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS12 SS14 SS16 SS18 SS110 SS112 SS115 SS120 Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 1.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 30 A Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.55 0.85 0.2 5 0.3 10 IR Cj 0.70 110 80 0.90 V 0.1 2 mA pF RθJA 90 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1MHz and applied reverse voltage of 4 V D.C. （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.11 SMA-S-SS12~SS120-1A200V Page 1 of 3 山东晶导微电子有限公司 SS12 THRU SS120 Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =75°C 10 2 SS12/SS14 SS16-SS120 10 1 T J =25°C 10 0 0 Case Temperature (°C) 80 100 500 Junction Capacitance ( pF) 20 10 1.0 SS12/SS14 SS16/SS18 SS110/SS112 SS115/SS120 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 SS12/SS14 20 SS16-SS120 10 1.8 0.1 30 24 18 12 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Transient Thermal Impedance（ °C /W） 36 06 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 60 Fig.4 Typical Junction Capacitance Instaneous Forward Voltage (V) Fig.6- Typical Transient Thermal Impedance 100 Number of Cycles at 60Hz 2016.11 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) T J =100°C 10 3 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 SS12 THRU SS120 Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil g e A D The recommended mounting pad size a 0.3 12 Marking Type number 2.2 (86) mm Unit ： (mil) 2016.11 SS12 SS12 SS14 SS14 1.8 (71) 1.8 (71) 1.8 (71) Marking code 611292A8 SS16 SS16 SS18 SS18 SS110 SS110 SS112 SS112 SS115 SS115 SS120 SS120 Page 3 of 3