ESD5471X-2/TR

ESD5471X ESD5471X 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5471X is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to power lines, low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. FBP-02C (Bottom View) The ESD5471X may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 6A (8/20μs) according to IEC61000-4-5. The ESD5471X is available in FBP-02C package. Standard products are Pb-free and Halogen-free. Circuit diagram Features   Reverse stand-off voltage: ±5V Max Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 6A (8/20μs) A = Device code  Capacitance: CJ = 9pF typ.  Low leakage current  Low clamping voltage: VCL = 12V typ. @ IPP = 16A (TLP)  Solid-state silicon technology * = Month code ( A~Z) Marking (Top View) Order information Applications  Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. 1 Device Package Shipping ESD5471X-2/TR FBP-02C 10000/Tape&Reel Revision 1.2, 2014/01/15 ESD5471X Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 72 W Peak pulse current (tp = 8/20μs) IPP 6 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Operation junction temperature Storage temperature ±30 kV 125 o TL 260 o TSTG -55~150 o TJ Lead temperature ±30 C C C Electrical characteristics (TA=25 oC, unless otherwise noted) Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.2, 2014/01/15 ESD5471X Electrical characteristics (TA=25 C, unless otherwise noted) o Parameter Symbol Condition Min. Typ. Max. Unit ±5 V 1 μA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V VBR IBR = 1mA 5.1 V IHOLD = 50mA 5.1 V Reverse breakdown voltage Reverse holding voltage VHOLD Clamping voltage 1) VCL IPP = 16A, tp = 100ns 12 V Clamping voltage 2) VCL VESD = 8kV 12 V Clamping voltage 3) VCL Dynamic resistance 1) RDYN Junction capacitance CJ IPP = 1A, tp = 8/20μs 8 V IPP = 6A, tp = 8/20μs 12 V 0.28 Ω VR = 0V, f = 1MHz 9 12 pF VR = 5V, f = 1MHz 6 8 pF Notes: 1) TLP parameter: Z0 = 50Ω , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 1.2, 2014/01/15 ESD5471X Typical characteristics (TA=25 C, unless otherwise noted) 110 100 90 80 70 60 50 40 30 20 10 0 100 90 Front time: T1= 1.25 T = 8s Time to half-value: T2= 20s Current (%) Peak pulse current (%) o T2 10 0 5 T 10 T1 15 20 25 Time (s) 30 35 CJ - Junction capacitance (pF) VC - Clamping voltage (V) 10 Pulse waveform: tp = 8/20s 10 Pin1 to Pin2 9 Pin2 to Pin1 8 7 6 0 1 2 3 4 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 11 tr = 0.7~1ns t 60ns 30ns 40 5 6 f = 1MHz VAC = 50mV 9 8 7 6 5 -5 7 -4 -3 IPP - Peak pulse current (A) -2 -1 0 1 2 3 4 5 VR - Reverse voltage (V) Capacitance vs. Reveres voltage Clamping voltage vs. Peak pulse current 1000 100 % of Rated power Peak pulse power (W) 100 10 1 1 10 100 Pulse time ( s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Power derating vs. Ambient temperature Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 4 Revision 1.2, 2014/01/15 ESD5471X Typical characteristics (TA=25 C, unless otherwise noted) o ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 16 TLP current (A) 12 8 4 0 -4 -8 Z0 = 50 -12 tr = 2ns -16 tp = 100ns -20 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.2, 2014/01/15 ESD5471X Package outline dimensions FBP-02C Symbol Dimensions In Millimeters Min. Typ. Max. A 0.450 0.500 0.550 A1 0.010 -- 0.100 D 0.950 1.000 1.050 E 0.550 0.600 0.650 D1 0.470 Ref. E1 0.420 Ref. b 0.270 0.320 0.370 b1 0.250 0.300 0.350 e 0.555 0.605 0.655 e1 L 0.230 Ref. 0.250 0.300 L1 L2 0.350 0.030 Ref. 0.370 0.420 L3 0.470 0.040 Ref. Recommend land pattern (Unit: mm) Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 6 Revision 1.2, 2014/01/15