BSS138
N-Channel Enhancement-Mode MOS FETs
MAXIMUM RATINGS
Characteristic
Symbol
Max
Unit
Drain-Source Voltage
BVDSS
50
V
Gate- Source Voltage
VGS
+20
V
Drain Current (continuous)
IDR
220
mA
Drain Current (pulsed)
IDRM
880
mA
THERMAL CHARACTERISTICS
Symbol
Characteristic
Total Device Dissipation
TA=25℃
Derate above25℃
Unit
225
mW
1.8
mW/℃
350
℃/W
PD
Thermal Resistance Junction to Ambient
RΘJA
Junction and Storage Temperature
TJ,Tstg
www.slkormicro.com
Max
1
150℃,-55to+150℃
BSS138
ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted )
Characteristic
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
(ID =250uA,VGS=0V)
BVDSS
50
—
—
V
Gate Threshold Voltage
(ID =1mA,VGS= VDS)
VGS(th)
0.8
—
1.6
V
Diode Forward Voltage Drop
(ISD=220mA,VGS=0V)
VSD
—
—
1.4
V
Zero Gate Voltage Drain Current
(VGS=0V, VDS= BVDSS)
(VGS=0V, VDS=0.6BVDSS)
IDSS
—
—
0.5
100
uA
nA
Gate Body Leakage
(VGS=+20V, VDS=0V)
IGSS
—
—
+100
nA
RDS(ON)
—
—
3.5
6
Ω
CISS
—
—
50
pF
COSS
—
—
25
pF
Turn-ON Time
(VDS=30V, ID=200mA, RGEN=25Ω)
t(on)
—
—
20
ns
Turn-OFF Time
(VDS=30V, ID=200mA, RGEN=25Ω)
t(off)
—
—
20
ns
Static Drain-Source On-State Resistance
(ID=220mA,VGS=10V)
(ID=220mA,VGS=4.5V)
Input Capacitance
(VGS=0V, VDS=25V,f=1MHz)
Common Source Output Capacitance
(VGS =0V, VDS=25V,f=1MHz)
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3. Pulse Width
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