Si1553CDL-T1-GE3

Si1553CDL-T1-GE3 www.VBsemi.com N- and P- Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = 4.5 V 3.28 0.110 at VGS = 2.5 V 2.13 0.130 at VGS = 1.8 V 1.50 0.155 at VGS = - 4.5 V - 2.80 0.190 at VGS = - 2.5 V - 1.81 0.220 at VGS = - 1.8 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS - 1.15 • Load Switch for Portable Devices D1 SOT-363 SC-70 (6-LEADS) S1 1 6 S2 D1 G2 G1 2 5 G2 D2 3 4 S2 G1 Top View S1 D2 N-Channel P-Channel ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol 5s P-Channel Steady State 5s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 20 ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Current IS TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range PD V 3.28 3.03 - 2.80 - 2.58 2.12 1.81 - 1.72 - 1.53 9.5 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID - 8.5 2.61 2.48 - 1.61 -1.48 1.24 1.17 1.10 0.97 0.88 0.75 0.66 0.5 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. 服务热线：400-655-8788 1 Si1553CDL-T1-GE3 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 100 µA N-Ch 0.45 1 VDS = VGS, ID = - 100 µA P-Ch - 0.45 1 N-Ch ± 100 P-Ch ± 100 N-Ch 1 VDS = - 16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 IGSS VDS = 0 V, VGS = ± 8 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 2 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -2 RDS(on) gfs VSD nA µA -5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C ID(on) V A VGS = 4.5 V, ID = 2.55 A N-Ch 0.090 VGS = - 4.5 V, ID = - 1.85 A P-Ch 0.155 VGS = 2.5 V, ID = 1.55 A N-Ch 0.110 VGS = - 2.5 V, ID = - 1.35 A P-Ch 0.19+0 VGS = 1.8 V, ID = 0.50 A N-Ch 0.130 VGS = - 1.8 V, ID = - 0.50 A P-Ch 0.220 VDS = 10 V, ID = 1.13 A N-Ch 2.6 VDS = - 10 V, ID = - 0.88 A P-Ch 1.5 IS = 0.48 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.48 A, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 1.25 2 1.8 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Reverse Recovery Time trr N-Channel VDS = 10 V, VGS = 4.5 V, ID = 2.55 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω IF = 0.48 A, dI/dt = 100 A/µs P-Ch 1.2 N-Ch 0.21 P-Ch 0.3 N-Ch 0.3 P-Ch 0.21 nC N-Ch 15 25 P-Ch 18 30 N-Ch 22 35 P-Ch 25 40 N-Ch 25 40 P-Ch 15 25 N-Ch 12 20 P-Ch 12 20 N-Ch 30 60 P-Ch 30 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 服务热线：400-655-8788 Si1553CDL-T1-GE3 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 5 V thru3 V TC = - 55 °C I D - Drain Current (A) I D - Drain Current (A) 25 °C 7.5 1.5 V 5.0 2.5 7.5 125 °C 5.0 2.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 1.0 2.0 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.6 160 120 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.5 0.4 0.3 VGS = 1.8 V 0.2 VGS = 2.5 V Ciss 80 40 Coss 0.1 VGS = 4.5 V 0.0 0.0 Crss 0 0.5 1.0 1.5 2.0 0 4 ID - Drain Current (A) 8 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 VDS = 10 V ID = 1.28 A VGS = 4.5 V ID = 1.13 A 4 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 12 3 2 1 0 0.0 1.2 1.0 0.8 0.3 0.6 0.9 Qg - Total Gate Charge (nC) Gate Charge 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 Si1553CDL-T1-GE3 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 2 TJ = 150 °C R DS(on) - On-Resistance (Ω) 0.5 I S - Source Current (A) 1 TJ = 25 °C 0.4 ID = 1.13 A 0.3 0.2 0.1 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 1 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 5 ID = 100 µA 0.1 4 0.0 3 Power (W) VGS(th) Variance (V) 2 - 0.1 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 IDM Limited P(t) = 0.0001 I D - Drain Current (A) Limited by RDS(on)* 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 0.1 P(t) = 0.1 TA = 25 °C Single Pulse P(t) = 1 P(t) = 10, DC BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 服务热线：400-655-8788 Si1553CDL-T1-GE3 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 170 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 5 Si1553CDL-T1-GE3 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 3.0 TC = - 55 °C 2.5 I D - Drain Current (A) I D - Drain Current (A) 2.5 3V VGS = 5 V thru 3.5 V 2.5 V 2.0 1.5 2V 1.0 1.5 V 0.5 25 °C 2.0 125 °C 1.5 1.0 0.5 1V 0.0 0.0 0.0 0 1 2 3 4 0.5 1.0 1.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 160 0.64 VGS = 1.8 V Ciss 120 0.48 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2.5 2.0 VGS = 2.5 V 0.32 VGS = 4.5 V 80 Coss 40 0.16 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 8 10 VDS - Drain-to-Source Voltage (V) Capacitance 12 1.6 VGS = 4.5 V ID = 0.88 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 ID - Drain Current (A) VDS = 10 V ID = 0.9 A 6 4 On-Resistance vs. Drain Current 5 1.2 1.0 0.8 1 0 0.0 2 0.3 0.6 0.9 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 服务热线：400-655-8788 Si1553CDL-T1-GE3 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 2 I S - Source Current (A) ID = 0.88 A R DS(on) - On-Resistance (Ω) TJ = 150 °C 1 TJ = 25 °C 1.2 0.8 0.4 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.30 5 0.25 ID = 100 µA 4 0.15 3 Power (W) V GS(th) Variance (V) 0.20 0.10 0.05 2 0.00 - 0.05 1 - 0.10 - 0.15 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 600 10 IDM Limited I D - Drain Current (A) P(t) = 0.0001 Limited by RDS(on)* 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 0.1 P(t) = 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 P(t) = 1 P(t) = 10 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 7 Si1553CDL-T1-GE3 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 170 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 t1 t2 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 8 服务热线：400-655-8788 Si1553CDL-T1-GE3 SCĆ70: www.VBsemi.com 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom A1 服务热线：400-655-8788 9 Si1553CDL-T1-GE3 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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