UT8205AG-AG6

UT8205AG-AG6 www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.024 at VGS = 4.5 V 6.0 0.028 at VGS = 2.5 V 5.0 • Halogen-free Option Available • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Pb-free Available RoHS* COMPLIANT TSOP6 Top View S1 D1/D2 S2 1 6 2 5 3 4 D D G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 5.2 4.8 4.2 30 1.5 A 1.0 1.5 1.0 0.96 0.64 TJ, Tstg Operating Junction and Storage Temperature Range V 6.0 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. E-mail：China@VBsemi TEL:86-755-83251052 RthJA RthJF Typ. Max. 72 83 100 120 55 70 Unit °C/W UT8205AG-AG6 www.VBsemi.tw SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.5 IGSS Typ.a Max. Unit 1.5 V VDS = 0 V, VGS = ± 4.5 V ± 200 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 25 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Voltageb 30 A VGS = 4.5 V, ID = 5.5 A 0.024 VGS = 2.5 V, ID = 3.5 A 0.028 gfs VDS = 10 V, ID = 5.5 A 30 VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 12 18 VDS = 10 V, VGS = 4.5 V, ID = 5.5 A 2.2 RDS(on) Forward Transconductanceb Diode Forward VDS ≤ 5 V, VGS = 4.5 V µA Ω S V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.6 Turn-On Delay Time td(on) 245 365 330 495 860 1300 510 765 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10000 1000 8 I GSS - Gate Current (A) I GSS - Gate Current (mA) 10 6 4 100 10 TJ = 150 °C 1 2 TJ = 25 °C 0.1 0 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage E-mail：China@VBsemi TEL:86-755-83251052 18 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 UT8205AG-AG6 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6.0 6.0 VGS = 5 thru 3 V 2.5 V 2.5 I D - Drain Current (A) I D - Drain Current (A) 4.5 2.0 1.5 1.0 2V 0.5 0 1 2 3 1.0 TC = 125 °C 25 °C - 55 °C 4 0 0.0 5 0.5 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 5 VGS - Gate-to-Source Voltage (V) 0.05 0.04 0.03 VGS = 2.5 V VGS = 4.5 V 0.02 VDS = 10 V ID = 5.5 A 4 3 2 1 0 0.01 5 0 10 15 25 20 0 30 3 6 On-Resistance vs. Drain Current 15 40 VGS = 4.5 V ID = 5.5 A I S - Source Current (A) 10 1.2 1.0 0.8 0.6 - 50 12 Gate Charge 1.6 1.4 9 Qg - Total Gate Charge (nC) ID - Drain Current (A) R DS(on) - On-Resistance (Normalized) 1.5 VDS - Drain-to-Source Voltage (V) 0.06 R DS(on) - On-Resistance (Ω) 1.5 0.5 1V 0 2.0 TJ = 150 °C TJ = 25 °C 1 0.1 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature E-mail：China@VBsemi TEL:86-755-83251052 150 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.5 UT8205AG-AG6 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 0.4 0.04 0.2 0.03 V GS(th) Variance (V) R DS(on) - On-Resistance (Ω) ID = 250 µA ID = 5.5 A 0.02 0.01 0.0 - 0.2 - 0.4 0.00 0 1 2 3 4 5 - 0.6 - 50 6 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 150 125 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 10 200 Limited by R DS(on)* 160 I D - Drain Current (A) Power (W) 5 120 80 1 ms 1 100 ms 0.1 40 10 ms 1s 10 s TC = 25 °C Single Pulse DC 0.01 0 0.001 0.01 0.1 1 10 0.1 Time (s) Single Pulse Power 10 100 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 115 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient E-mail：China@VBsemi TEL:86-755-83251052 100 600 UT8205AG-AG6 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot E-mail：China@VBsemi TEL:86-755-83251052 1 10 UT8205AG-AG6 www.VBsemi.tw TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 E-mail：China@VBsemi TEL:86-755-83251052 INCHES 7 Nom UT8205AG-AG6 www.VBsemi.tw RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail：China@VBsemi TEL:86-755-83251052 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) UT8205AG-AG6 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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