WSD3075DN56
N-Ch MOSFET
General Description
Product Summery
The WSD3075DN56 is the highest performance
trench N-ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
BVDSS
30V
The WSD3075DN56 meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
RDSON
6.5mΩ
ID
75A
Applications
z Battery protection
z Load switch
Features
z Uninterruptible power supply
z Advanced high cell density Trench technology
DFN5X6-8 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current, VGS @ 10V(Tc=25℃)
75
A
ID
Continuous Drain Current, VGS @ 10V(Tc=100℃)
38
A
IDM
Pulsed Drain Current
115
A
EAS
Single Pulse Avalanche Energy
57.8
mJ
IAS
Avalanche Current
34
A
PD
Total Power Dissipation (Tc=25℃)
46
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient
62
℃/W
RθJC
Thermal Resistance Junction-Case
2.7
℃/W
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Page 1
Rev 2: Apr.2019
WSD3075DN56
N-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
30
---
---
V
Reference to 25℃ , ID=1mA
---
0.027
---
V/℃
VGS=10V , ID=30A
---
6.5
8.5
VGS=4.5V , ID=15A
---
11
14
1.2
1.5
2.5
V
---
-5.8
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
VDS=24V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
38
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
2.9
Ω
Qg
Total Gate Charge (4.5V)
---
12.6
17.6
Qgs
Gate-Source Charge
---
4.2
5.9
Qgd
Gate-Drain Charge
---
5.1
7.1
Turn-On Delay Time
---
4.6
9.2
---
12.2
22
---
26.6
53
Fall Time
---
8
16
Ciss
Input Capacitance
---
1317
1844
Coss
Output Capacitance
---
163
228
Crss
Reverse Transfer Capacitance
---
131
183
IS
Continuous Source Current1,5
---
---
58
A
ISM
Pulsed Source Current2,5
---
---
115
A
VSD
Diode Forward Voltage2
---
---
1
V
trr
Reverse Recovery Time
---
9.2
---
nS
Qrr
Reverse Recovery Charge
---
2
---
nC
Td(on)
Tr
Td(off)
Tf
Rise Time
Turn-Off Delay Time
VDS=15V , VGS=4.5V , ID=15A
VDD=15V , VGS=10V , RG=3.3
ID=15A
VDS=15V , VGS=0V , f=1MHz
VG=VD=0V , Force Current
VGS=0V,IS=1A , TJ=25℃
IF=30A,dI/dt=100A/µs,TJ=25℃
nC
ns
pF
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=3
3.
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
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Page 2
Rev 2: Apr.2019
WSD3075DN56
N-Ch MOSFET
Typical Characteristics
100
ID Drain Current (A)
75
VGS=10V
VGS=7V
VGS=5V
50
VGS=4.5V
VGS=3V
25
0
0
0.5
1
1.5
2
2.5
VDS , Drain-to-Source Voltage (V)
3
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
Voltage
10
12
ID =15A
VGS , Gate to Source Voltage (V)
IS -Source Current(A)
10
8
TJ=150℃ TJ=25℃
6
4
2
0
0
0.3
0.6
8
6
VDS=24V
4
2
0
0.9
0
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of reverse
6
12
18
QG , Total Gate Charge (nC)
24
30
Fig.4 Gate-Charge Characteristics
diode
1.8
Normalized On Resistance
1.8
1.4
1.4
Normalized VGS(th)
VDS=15V
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
-50
150
Fig.5 Normalized VGS(th) vs. TJ
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0
50
100
150
TJ , Junction Temperature (℃)
TJ ,Junction Temperature (℃ )
Fig.6 Normalized RDSON vs. TJ
Page 3
Rev 2: Apr.2019
WSD3075DN56
N-Ch MOSFET
10000
1000.00
F=1.0MHz
Capacitance (pF)
10us
100.00
Ciss
100us
1000
ID (A)
10.00
Coss
10ms
100ms
DC
1.00
100
Crss
0.10
TC= 2 5
℃
Single Pulse
10
1
5
9
13
17
21
0.01
0.1
25
1
10
VDS , Drain to Source Voltage (V)
100
1000
VDS (V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P DM
T ON
SINGLE
T
D = TON/T
TJpeak = TC+P DMXRθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=
VDS
90%
BVDSS
1
L x IAS2 x
2
BVDSS
BVDSS-VDD
VDD
IAS
10%
VGS
Td(on)
Tr
Ton
Td(off)
Tf
Toff
Fig.10 Switching Time Waveform
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VGS
Fig.17 Unclamped Inductive Switching Waveform
Page 4
Rev 2: Apr.2019
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