WSK180N04

WSK180N04 N-Ch MOSFET General Description Product Summery The WSK180N04 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 3.0mΩ 180A Applications The WSK180N04 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z Switching application z Power Management for Inverter Systems. Features TO-263-2L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 176 A TC=25°C 6481,2 A TC=25°C 180 TC=100°C 120 TC=25°C 192 TC=100°C 96 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case 0.78 RθJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS NOTE: Avalanche Energy, Single Pulsed L=0.5mH 1.091,2 J 1,Repetitive rating ; pulse width limiited by junction temperatur 2,Drain current is limited by junction temperature www.winsok.tw Page 1 Rev 1: May.2019 WSK180N04 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit 40 - - V - - 1 - - 10 Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) * Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS=0V, IDS=250µA VDS=40V, VGS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=250µA 2.0 3.0 4.0 V Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=88A - 3.0 3.6 mΩ Diode Characteristics VSD * Diode Forward Voltage ISD=88A, VGS=0V - 0.8 1.2 V trr Reverse Recovery Time ISD=88A, dlSD/ - 27 - ns Qrr Reverse Recovery Charge dt=100A/µs - 50 - nC VGS=0V,VDS=0V,F=1MHz - 1.1 - Ω - 4426 - - 1027 - - 537 - - 27 - - 18 - Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time - 41 - Turn-off Fall Time - 53 - - 121 - - 28 - - 34 - Tf VGS=0V, VDS=25V, Frequency=1.0MHz VDD=20V, RG=6 Ω, IDS =88A, VGS=10V , pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=32V, VGS=10V, IDS=88A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. www.winsok.tw Page 2 Rev 1: May.2019 WSK180N04 N-Ch MOSFET Typical Characteristics Drain-Source On Resistance Output Characteristics 400 3.9 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mW) 350 ID - Drain Current (A) 300 5V 250 200 150 100 4.5V 3.5 VGS=10V 3.0 50 0 0.0 4V 1.0 2.0 3.0 4.0 5.0 2.5 6.0 0 40 VDS - Drain - Source Voltage (V) 80 120 Gate-Source On Resistance 1.6 IDS =250mA IDS=88A 12 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 200 Gate Threshold Voltage 14 10 8 6 4 2 0 160 ID - Drain Current (A) 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 3 Rev 1: May.2019 WSK180N04 N-Ch MOSFET Typical Characteristics Drain-Source On Resistance 2.0 200 VGS = 10V 100 IDS = 88A 1.8 1.6 o IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 1.4 1.2 1.0 0.8 Tj=175 C 10 o Tj=25 C 1 0.6 o RON@Tj=25 C: 3.0mW 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.8 1.0 1.2 Capacitance Gate Charge VDS= 32V 9 VGS - Gate-source Voltage (V) 9000 7500 6000 Ciss 4500 3000 Coss 1500 16 24 32 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.winsok.tw IDS= 88A 8 1 Crss 8 1.4 10 10500 C - Capacitance (pF) 0.6 VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 12000 0 0.2 0 25 50 75 100 125 QG - Gate Charge (nC) Page 4 Rev 1: May.2019 WSK180N04 N-Ch MOSFET Power Dissipation Drain Current 275 187 175 ID - Drain Current (A) Ptot - Power (W) 250 200 150 100 limited by package 150 125 100 75 50 50 25 o TC=25 C 0 0 o 0 20 40 60 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area Lim it 100 100us Rd s(o n) ID - Drain Current (A) 1000 10ms 1ms 10 DC 1 0.1 10 1 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.winsok.tw Page 5 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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