WSF4042

WSF4042 N-Ch and P-Channel MOSFET Product Summery General Description The WSF4042 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF4042 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 40V 14mΩ 20A -40V 16mΩ -20A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Features z Networking DC-DC Power System z CCFL Back-light Inverter z Advanced high cell density Trench technology TO-252-4L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 ±20 V 1 20 -20 A 1 16 -14 A 80 -80 A mJ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 25 25 IAS Avalanche Current 10 -10 A 32.9 32.9 W 4 PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range 150 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 60 ℃/W RθJC Thermal Resistance Junction-Case1 --- 3.8 ℃/W www.winsok.tw Typ. Page 1 Rev1.0 May.2020 WSF4042 N-Ch and P-Channel MOSFET N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=10A --- 14 21 VGS=4.5V , ID=5A --- 18 25 1.5 2.0 2.5 V --- -4.56 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=12A --- 8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 5.2 Ω Qg Total Gate Charge (4.5V) --- 7.5 --- Qgs Gate-Source Charge --- 3.24 --- Qgd Gate-Drain Charge --- 2.75 --- VDS=20V , VGS=4.5V , ID=12A uA nC --- 7.8 --- Rise Time VDD=20V , VGS=10V , RG=3.3Ω --- 6.9 --- Turn-Off Delay Time ID=1A --- 22.4 --- Fall Time --- 4.8 --- Ciss Input Capacitance --- 815 --- Coss Output Capacitance --- 95 --- Crss Reverse Transfer Capacitance --- 60 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 10 A --- --- 30 A --- --- 1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev1.0 May.2020 WSF4042 N-Ch and P-Channel MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.012 --- V/℃ VGS=-10V , ID=-8A --- 16 20 --- 20 24 -1.5 -2.0 -2.5 V --- 4.32 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=-4.5V , ID=-4A VGS=VDS , ID =-250uA mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-8A --- 12.6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 16 Ω Qg Total Gate Charge (-4.5V) --- 7.5 --- Qgs Gate-Source Charge --- 2.4 --- Qgd Gate-Drain Charge --- 3.5 ----- VDS=-20V , VGS=-4.5V , ID=-12A nC --- 8.7 Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 7 --- Turn-Off Delay Time ID=-1A --- 31 --- Fall Time --- 17 --- Ciss Input Capacitance --- 668 --- Coss Output Capacitance --- 98 --- Crss Reverse Transfer Capacitance --- 72 --- Min. Typ. Max. Unit --- --- -10 A --- --- -30 A --- --- -1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 3 Rev1.0 May.2020 WSF4042 N-Ch and P-Channel MOSFET N Channel Typical Operating Characteristics Drain Current 36 24 30 20 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 24 18 12 16 12 8 4 6 o TC=25 C,VG=10V o 0 TC=25 C 0 20 40 60 0 80 100 120 140 160 0 20 Tj - Junction Temperature (°C) 100ms 1ms 1 Normalized Transient Thermal Resistance 100 Rd s(o n) Lim it 80 100 120 140 160 Thermal Transient Impedance 300 ID - Drain Current (A) 60 Tj - Junction Temperature (°C) Safe Operation Area 10 40 3 Duty = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 10ms DC o TC=25 C 0.1 0.01 0.1 1 10 o 1E-4 1E-6 100 300 RqJC :3.8 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) www.winsok.tw Single Pulse Page 4 Rev1.0 May.2020 WSF4042 N-Ch and P-Channel MOSFET N Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 35 60 VGS=5,6,7,8,9,10V ID - Drain Current (A) RDS(ON) - On - Resistance (mW) 4V 50 40 30 3.5V 20 10 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS=4.5V 20 VGS=10V 15 10 5 3.0 0 10 20 30 40 50 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 60 1.6 IDS=10A 50 IDS =250mA Normalized Threshold Vlotage RDS(ON) - On - Resistance (mW) 25 VDS - Drain - Source Voltage (V) 60 40 30 20 10 0 30 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) www.winsok.tw 1.4 Page 5 Rev1.0 May.2020 WSF4042 N-Ch and P-Channel MOSFET N Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance 2.0 80 VGS = 10V 1.8 IDS = 10A 1.6 IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 1.4 1.2 1.0 0.8 0.6 10 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C: 16mW 0.2 -50 -25 0 25 50 75 0.6 0.9 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge VDS=20V 9 I =10A DS VGS - Gate-source Voltage (V) Ciss 800 1.5 10 Frequency=1MHz 1000 600 400 200 Coss 0 0.3 Tj - Junction Temperature (°C) 1200 C - Capacitance (pF) 0.1 0.0 100 125 150 8 7 6 5 4 3 2 1 Crss 0 8 16 24 32 0 0 40 8 12 16 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 4 Page 6 Rev1.0 May.2020 WSF4042 N-Ch and P-Channel MOSFET P Channel Typical Operating Characteristics Drain Current 24 30 20 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 36 24 18 12 16 12 8 6 4 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 TC=25 C,VG=-10V 0 20 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 3 Normalized Transient Thermal Resistance 300 ds (o n) L im it 100 100ms R -ID - Drain Current (A) 40 10 1ms 1 10ms o TC=25 C 1 10 0.1 0.05 0.02 0.01 0.01 Single Pulse o 1E-4 1E-6 100 300 -VDS - Drain - Source Voltage (V) www.winsok.tw 0.2 0.1 1E-3 DC 0.1 0.1 Duty = 0.5 1 RqJC :3.8 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) Page 7 Rev1.0 May.2020 WSF4042 N-Ch and P-Channel MOSFET P Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 80 60 RDS(ON) - On - Resistance (mW) -ID - Drain Current (A) 70 VGS=-6,-7,-8,-9,-10V 50 -5V 40 -4.5V 30 -4V 20 -3.5V 10 60 50 VGS=-4.5V 40 30 VGS=-10V 20 -3V 0 0 2 4 6 8 10 10 0 10 20 30 Gate Threshold Voltage Gate-Source On Resistance 1.6 70 IDS =-250mA IDS=-10A 1.4 Normalized Threshold Vlotage 60 RDS(ON) - On - Resistance (mW) 50 -ID - Drain Current (A) -VDS - Drain - Source Voltage (V) 50 40 30 22 0 1.2 1.0 0.8 0.6 0.4 10 0 40 2 3 4 5 6 7 8 9 0.2 -50 -25 10 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) www.winsok.tw 0 Page 8 Rev1.0 May.2020 WSF4042 N-Ch and P-Channel MOSFET P Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance 2.0 VGS = -10V 1.8 IDS = -10A 1.6 -IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 60 1.4 1.2 1.0 0.8 0.6 10 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C: 30mW 0.2 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz 900 VDS=-20V 9 I =-10A DS 800 8 700 -VGS - Gate-source Voltage (V) C - Capacitance (pF) 1000 Ciss 600 500 400 300 200 Coss 100 0 8 16 24 32 5 4 3 2 0 0 40 3 6 9 12 15 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) www.winsok.tw 6 1 Crss 0 7 Page 9 Rev1.0 May.2020 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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