WST2337A

WST2337A P-Ch MOSFET General Description Product Summery The WST2337A is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON -15V 30mΩ ID -4.8A Applications The WST2337A meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -15 V VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ IDM ±12 V 1 -4.8 A 1 Continuous Drain Current, VGS @ -4.5V -3.4 A Pulsed Drain Current -24 A Continuous Drain Current, VGS @ -4.5V 3 PD@TA=25℃ Total Power Dissipation 1.4 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W Rev:1.0 May.2019 WST2337A P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions = VGS=0V , ID -250uA Min. Typ. Max. Unit -15 --- V = VGS=-4.5V , ID -4.1A --- --30 48 = VGS=-2.5V , ID -3A --- 45 65 -0.45 -0.7 -1.2 V --- -1 uA nA RDS(ON) Static Drain-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage VGS=VDS , ID =-250uA Drain-Source Leakage Current VDS=-12V , VGS=0V , TJ=25℃ --- IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 Qg Total Gate Charge --- 7.8 --- Qgs Gate-Source Charge --- 1.2 --- Qgd Gate-Drain Charge --- 1.6 --- Turn-On Delay Time --- 12 --- --- 35 --- --- 30 --- --- 10 --- --- 738 1500 --- 280 --- --- 190 --- Min. Typ. Max. A V Td(on) Tr Td(off) Tf Rise Time Turn-Off Delay Time VDS=-4V,ID=-4.1A,VGS=-4.5V VDD=-4V,ID=-3.3A , RL=1.2Ω,VGEN=-4.5V,Rg=1Ω Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-4V,VGS=0V, F=1.0MHz mΩ nC ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current VG=VD=0V , Force Current --- --- -4.1 Diode Forward Voltage VGS=0V , IS=-1.6A , TJ=25℃ --- --- -1.2 Unit Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.winsok.tw Page 2 Rev:1.0 May.2019 WST2337A P-Ch MOSFET Typical Characteristics Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 3 Power Dissipation . Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics www.winsok.tw Figure 6 Drain-Source On-Resistance Page 3 Rev:1.0 May.2019 WST2337A ID- Drain Current (A) Normalized On-Resistance P-Ch MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge www.winsok.tw Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Page 4 Rev:1.0 May.2019 WST2337A ID- Drain Current (A) P-Ch MOSFET Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 5 Rev:1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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