WST3401A

WST3401A P-Ch MOSFET General Description Product Summery The WST3401A is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications . BVDSS RDSON ID -30V 48mΩ -5.0A Applications The WST3401A meet the RoHS and Green Product requirement , with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available SOT-23-3L Pin Configuration Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±12 V ID@TC=25℃ ID@TC=70℃ IDM PD@TA=25℃ 10s Units 1 -5.7 -5.0 A 1 -4.5 -4.0 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Steady State 2 -17 A 3 1.32 1 W 3 0.84 0.64 W Total Power Dissipation PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC www.winsok.tw Parameter Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case Page 1 Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W Rev:1.0 May.2019 WST3401A P-Ch MOSFET Electrical Characteristics (TJ=25℃unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ VGS=-10V , ID=-3A --- 48 57 VGS=-4.5V , ID=-2A --- 55 64 -0.6 --- -1.2 V --- 4 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 11 --- S Qg Total Gate Charge (-4.5V) --- 6.2 9.0 Qgs Gate-Source Charge --- 2.2 3.2 Qgd Gate-Drain Charge --- 1.8 2.7 Td(on) VDS=-15V , VGS=-4.5V , ID=-3A nC --- 2.7 5.6 Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 8.3 15.1 Turn-Off Delay Time ID=-3A --- 38 78.0 Fall Time --- 6 12.0 Ciss Input Capacitance --- 580 816 Coss Output Capacitance --- 98 140 Crss Reverse Transfer Capacitance --- 77 112 Min. Typ. Max. Unit --- --- -4.0 A --- --- -14 A --- --- -1 V --- 7.6 --- nS --- 2.4 --- nC Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t