SS210

SS22-210 SERIES SCHOTTKY SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS ROHS FEATURES  For surface mounted applications  Metal silicon junction,majority carrier conduction  Low power loss,high efficiency  Built-in strain relief,ideal for automated placement  High forward surge current capability  High temperature soldering guaranteed: 250℃/10 seconds at terminals  The plastic material carries U/L recognition 94V-O MECHANICAL DATA  Case: JEDEC DO -214AC. molded plastic  Terminals: Axial leads. Solderable per MIL - STD - 750 Method 2026  Polarity: Color band denotes cathode  Weight: 0.003 ounce. 0.093 grams  Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ℃ ambient temperature unless otherwise specified. Single phase. half wave. 60HZ. resistive or inductive load. For capacitive load. derate current by 20％ Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 75°C Symbol SS22 SS23 SS24 SS25 SS26 SS28 SS29 SS210 Unit VRRM VRWM VR 20 30 40 50 60 80 90 100 V VR(RMS) 14 21 28 35 42 56 64 71 V IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward Voltage @IF = 1.0A VFM @TA = 25°C @TA = 100°C IRM 0.5 20 mA R
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JA 28 88 °C/W Tj -65 to +125 °C TSTG -65 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 1) Operating Temperature Range Storage Temperature Range NOTE: 0.55 0.70 0.85 V 1. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC 2. P.C.B.mounted with 0.2×0.2 (5.0×5.0mm)copper pad areas Rev 8: Nov 2014 bufan www.born-tw.com Page 1 of 2 SS22-210 SERIES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 2.0 1.0 0 25 50 75 100 125 150 TL , LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve SS25 - SS26 SS22 - SS24 1.0 SS28 - S210 0.1 Tj - 25ºC IF Pulse Width = 300 µs 0.01 0 0.4 0.8 1.2 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics 1000 50 T j = 25°C f = 1 MHz Single Half-Sine-Wave (JEDEC Method) Tj = 100°C 40 Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) ROHS 10 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) SCHOTTKY 30 20 10 100 10 0 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 10 Tj = 100ºC 1.0 Tj = 75ºC 0.1 0.01 Tj = 25ºC 0.001 60 100 120 140 0 80 40 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics Rev 8: Nov 2014 www.born-tw.com Page 2 of 2