SDD32C12L01

SD DD32C12L01 Ele ectrostattic Disch harged Protection n Device es (ESD) Data Sheet Des scription SDD D32C05L01 is designe ed to protecct low voltag ge sensitive e components from ESD and transient vo oltage eventts. Excellent clam mping capability, low leakkage, and fa ast response e time, make e thesse parts idea al for ESD protection p o designs where on w board d spacce is at a pre emium. Beca ause of its small s size, it is suited forr use in cellular ph hones, porta able devicess, digital cam meras, power supp plies and ma any other po ortable appliccations. It iss designed to o prote ect sensitive semiconducttor compone ents from dam mage or upse et due to electrosta atic discharg ge (ESD), ellectrical fastt transients (EFT T), and cable e discharge events (CD DE). Fea atures ● ● ● ● ● ● ● ● ● ● ● ● IE EC61000-4--2 ESD 30KV Air, 30KV contact com mpliance SOD-323 surface mountt package S P Protects bi-d directional lin ne W Working voltage: 12V L Low leakage e current L Low clamping voltage S Solid-state silicon avalan nche techno ology L Lead Free/R RoHS compliant S Solder reflow w temperature: Pure Tin-Sn, 260~27 70℃ F Flammability y rating UL 94V-0 9 M Meets MSL level 1, per J-STD-020 J M Marking: 2M Pin Configu uration App plications ● ● ● ● Cellular hand C dsets & Acccessories C Cordless pho ones P Personal dig gital assistan nts (PDAs) N Notebooks & Handheldss ● ● ● ● Portable instrumentattion Digital cam meras Periphera als MP3 playe ers Max ximum Ra atings R Rating Peak pulse currrent (tp=8/2 20μs wavefo orm) ES SD voltage (C Contact disccharge) ES SD voltage (A Air discharge) Sto orage & ope erating tempe erature rang ge Reviision：20th-F Feb-19 Symbol V Value Unit IPP 3 320 A VESD TSTG ,TJ ± ±30 ± ±30 -55~ ~+150 kV ℃ www w.brightking g.com SDD32C12L01 Electrical Characteristics (TJ=25℃) Parameter Reverse stand-off voltage Reverse breakdown voltage Symbol Condition Min. Typ. VRWM Max. Unit 12 V VBR IBR=1mA 13.3 V Reverse leakage current IR VR=12V Clamping voltage (tp=8/20μs) VC IPP=12A 25 V Off state junction capacitance CJ 0Vdc,f=1MHz 45 pF 1 μA Typical Characteristics Curves Figure 1. Power Derating Curve Figure 2. Pulse Waveform 110 100 tr Peak value Ipp Waveform Parameters: tr=8µs td=20µs 90 80 70 60 50 40 td=t|PP/2 30 20 10 0 0 5 10 15 20 25 30 t-Time (μs) Junction Capacitance (pF) Figure 3. Capacitance vs. Reverse Voltage Revision：20th-Feb-19 www.brightking.com SDD32C12L01 Recommended Soldering Conditions Reflow Soldering Recommended Condition Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) (ts) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate 3℃/second max. Time maintained above: -Temperature (TL) -Time (tL) 217℃ 60-150 seconds Peak Temperature (TP) 260℃ Time within 5℃ of actual Peak Temperature (tP) Ramp-down Rate Time 25℃ to Peak Temperature Revision：20th-Feb-19 20-40 seconds 6℃/second max. 8 minutes max. www.brightking.com SDD32C12L01 Dimensions (SOD-323) G E Dimension Symbol X H 1 2 F A D B C detail X Millimeters Inches Min. Max. Min. Max. A 0.80 1.10 0.031 0.043 B - 0.10 - 0.004 C 0.20 - 0.008 - D 0.11 0.20 0.004 0.008 E 1.15 1.35 0.045 0.053 F - 0.35 - 0.014 G 1.60 1.80 0.063 0.071 H 2.40 2.60 0.094 0.102 Packaging F B0 B Reel W E Tape Symbol Dimension (mm) W 8.00±0.30 P0 4.00±0.10 P1 4.00±0.10 P2 2.00±0.10 D0 Φ1.55±0.10 D1 Φ1.00±0.05 E 1.75±0.10 F 3.50±0.10 A 1.48±0.10 A0 0.80±0.10 B 3.00±0.10 B0 1.80±0.10 K 1.05±0.10 t 0.25±0.05 D Φ178.0±2.0 D2 Φ13.0 W1 9.5 Quantity: 3000PCS Revision：20th-Feb-19 www.brightking.com