2N7002K
SOT-23 Plastic-Encapsulate MOSFETS
60V N-Channel Enhancement Mode MOSFET
V(BR)DSS
RDS(on)Typ
ID MAX
3
0.9Ω@10V
60 V
SO T -23
500mA
1.1Ω@4.5V
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z
High density cell design for low RDS(ON)
z
Voltage controlled small signal switch
Rugged and reliable
z
z
z
1
2
APPLICATION
Load Switch for Portable Devices
z DC/DC Converter
z
High saturation current capability
HMB ESD protected (2000V)
Equivalent circuit
MARKING
D
702K
G
S
PACKAGE SPECIFICATIONS
Package Reel Size
SOT-23
Reel DIA.
(mm)
Q'TY/Reel
(pcs)
Box Size
(mm)
QTY/Box
(pcs)
Carton Size
(mm)
Q'TY/Carton
(pcs)
330
3000
203×203×195
45000
438×438×220
180000
7'
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
0.5
A
Power Dissipation
PD
0.3
W
RθJA
400
℃/W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-50 ~+150
Thermal Resistance from Junction to Ambient
DN:T19B07A0
http://www.microdiode.com
℃
The above data are for reference only.
Rev:2019A0
Page :1
2N7002K
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise specified
Symbol
Parameter
Condition
Min
Typ
Max
Unit
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
60
--
--
V
Zero Gate Voltage Drain Current(TA=25℃)
VDS=60V, VGS=0V
--
--
1
μA
Zero Gate Voltage Drain Current(TA=125℃)
VDS=50V, VGS=0V
--
--
100
uA
IGSS
Gate-Body Leakage Current
VGS=±20V, VDS=0V
--
--
±10
uA
VGS(TH)
Gate Threshold Voltage
VDS=VGS, ID=250μA
1.0
1.6
2.5
V
RDS(ON)
Drain-Source On-State Resistance②
VGS=10V, ID=0.5A
--
0.9
2
Ω
RDS(ON)
Drain-Source On-State Resistance②
VGS=4.5V, ID=0.3A
--
1.4
3
Ω
--
23.8
--
pF
--
3.9
--
pF
--
1.5
--
pF
--
0.93
--
nC
--
0.18
--
nC
--
0.31
--
nC
--
6
--
ns
--
3.5
--
ns
-
20
--
ns
--
5.9
--
ns
--
--
0.2
A
--
0.78
1.2
V
IDSS
Dynamic Electrical Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Q gs
Gate Source Charge
Q gd
Gate Drain Charge
VDS=30V, VGS=0V,
f=1MHz
VDS=30V
ID=0.5A,
VGS=10V
Switching Characteristics
t d(on)
Turn on Delay Time
tr
Turn on Rise Time
t d(off)
Turn Off Delay Time
tf
Turn Off Fall Time
VDD=30V,
ID=0.3A,
RG=3.3Ω,
VGS=10V
Source Drain Diode Characteristics
ISD
Source drain current(Body Diode)
VSD
Forward on voltage②
TA=25℃
Tj=25℃, ISD=0.5A,
VGS=0V
Notes:
① Pulse width limited by maximum allowable junction temperature
②Pulse test ; Pulse width300s, duty cycle2%.
http://www.microdiode.com
Rev:2019A0
Page :2
2N7002K
ID, Drain-Source Current (A)
VGS(TH), Gate -Source Voltage (V)
Typical Characteristics
Fig1. Typical Output Characteristics
Fig2. Normalized Threshold Voltage Vs. Temperature
VDS, Drain -Source Voltage (mV)
Tj - Junction Temperature (°C)
ID, Drain-Source Current (A)
VDS, Drain -Source Voltage (V)
Fig3. Typical Transfer Characteristics
Fig4. Drain -Source Voltage vs Gate -Source Voltage
-ID - Drain Current (A)
VGS, Gate -Source Voltage (V)
ISD, Reverse Drain Current (A)
VGS, Gate -Source Voltage (V)
VSD, Source-Drain Voltage (V)
Fig5. Typical Source-Drain Diode Forward Voltage
VDS, Drain -Source Voltage (V)
Fig6. Maximum Safe Operating Area
The curve above is for reference only.
http://www.microdiode.com
Rev:2019A0
Page :3
2N7002K
C, Capacitance (pF)
VGS, Gate-Source Voltage (V)
Typical Characteristics
VDS, Drain-Source Voltage (V)
Fig8. Typical Gate Charge Vs. Gate-Source Voltage
Thermal Resistance
ZqJA Normalized Transient
Fig7. Typical Capacitance Vs. Drain-Source Voltage
Qg, Total Gate Charge (nC)
Pulse Width (s)
Fig9. Normalized Maximum Transient Thermal Impedance
Fig10. Switching Time Test Circuit and waveforms
The curve above is for reference only.
http://www.microdiode.com
Rev:2019A0
Page :4
2N7002K
Outlitne Drawing
SOT-23 Package Outline Dimensions
L
L1
E
E1
θ
1
e
Symbol
A
A1
b
c
D
E
E1
E1
e
L
L1
θ
Dimensions In Millimeters
Min
Typ
Max
1.00
1.40
0.10
0.35
0.50
0.10
0.20
2.70
2.90
3.10
1.40
1.60
2.4
2.80
1.90
0.10
0.30
0.4
0°
10°
Suggested Pad Layout
0.037
0.95
0.037
0.95
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its
products and specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, not does Microdiode Electronics
(Jiangsu) assume any liability for application assistance or customer product design. Microdiode
Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased
or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
Microdiode Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components
in life support devices or systems without express written approval of Microdiode Electronics
(Jiangsu).
http://www.microdiode.com
Rev:2019A0
Page :5
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