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2SK3019

2SK3019

  • 厂商:

    SK(台湾时科)

  • 封装:

    SOT-523-3

  • 描述:

    MOS管 N-Channe VDS=30V VGS=±20V ID=100mA Pd=150mW SOT523

  • 数据手册
  • 价格&库存
2SK3019 数据手册
2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits z Easy to parallel z 3 1 1. GATE 2 2. SOURCE 3. DRAIN Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Parameter VDS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A RθJA Value Units Symbol Thermal Resistance, Junction-to-Ambient 833 V ℃ /W PD Power Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V Gate –Source leakage current IGSS VGS =±20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA Drain-Source On-Resistance RDS(on) Forward Transconductance gFS 30 V 1 µA ±1 µA 1.5 V VGS = 4V, ID =10mA 8 Ω VGS =2.5V,ID =1mA 13 Ω VDS =3V, ID = 10mA 0.8 20 mS Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω, 80 ns 80 ns VDS =5V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) tf * These parameters have no way to verify. REV.08 1 of 3 2SK3019 Transfer Characteristics Output Characteristics 200 Ta=25℃ 200 3.0V 4.0V VDS=3V Pulsed Ta=25℃ 100 3.5V Pulsed ID 120 DRAIN CURRENT DRAIN CURRENT ID (mA) (mA) 160 2.5V 80 2.0V 40 30 10 3 VGS=1.5V 1 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 1 2 3 GATE TO SOURCE VOLTAGE (V) RDS(ON) —— ID RDS(ON) —— VGS 4 (V) VGS 15 50 30 Ta=25℃ Ta=25℃ Pulsed Pulsed RDS(ON) 10 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( Ω) ( Ω) 12 VGS=2.5V VGS=4V 3 9 6 ID=100mA 3 ID=50mA 1 0 3 1 30 10 DRAIN CURRENT ID 100 200 IS —— VSD 200 IS (mA) 100 Ta=25℃ Pulsed 30 SOURCE CURRENT 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 V 1.0 (V) SD REV.08 0 4 8 12 GATE TO SOURCE VOLTAGE (mA) 2 of 3 16 VGS (V) 20 2SK3019 REV.08 3 of 3
2SK3019 价格&库存

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2SK3019
    •  国内价格
    • 50+0.09494
    • 500+0.07625
    • 3000+0.06351
    • 6000+0.05735
    • 24000+0.05195
    • 51000+0.04904

    库存:971

    2SK3019
    •  国内价格
    • 20+0.10230
    • 200+0.09570
    • 500+0.08910
    • 1000+0.08250
    • 3000+0.07920
    • 6000+0.07458

    库存:1439