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S-8215AAL-K8T2U

S-8215AAL-K8T2U

  • 厂商:

    ABLIC(艾普凌科)

  • 封装:

    TMSOP-8_2.9X2.8MM

  • 描述:

    IC BATT PROT LI-ION 3-5CL 8TMSOP

  • 数据手册
  • 价格&库存
S-8215AAL-K8T2U 数据手册
S-8215A Series www.ablic.com BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) © ABLIC Inc., 2010-2019 Rev.2.6_00 The S-8215A Series is used for secondary protection of lithium-ion rechargeable batteries, and incorporates high-accuracy voltage detection circuits and delay circuits. Short-circuiting between cells makes it possible for serial connection of three cells to five cells.  Features • • • • • • • • • High-accuracy voltage detection circuit for each cell Overcharge detection voltage n (n = 1 to 5) 3.600 V to 4.700 V (50 mV step) Accuracy ±25 mV (Ta = +25°C) Accuracy ±30 mV (Ta = −5°C to +55°C) Overcharge hysteresis voltage n (n = 1 to 5) 0.0 mV to −550 mV (50 mV step) −300 mV to −550 mV Accuracy ±20% −100 mV to −250 mV Accuracy ±50 mV 0.0 mV to −50 mV Accuracy ±25 mV Delay times for overcharge detection can be set by an internal circuit only (External capacitors are unnecessary). Output form is selectable: CMOS output, Nch open-drain output, Pch open-drain output Output logic is selectable: Active "H", active "L" High-withstand voltage: Absolute maximum rating 28 V Wide operation voltage range: 3.6 V to 26 V Wide operation temperature range: Ta = −40°C to +85°C Low current consumption At VCUn − 1.0 V for each cell: 3.0 μA max. (Ta = +25°C) At 2.3 V for each cell: 1.7 μA max. (Ta = +25°C) Lead-free (Sn 100%), halogen-free  Application • Lithium-ion rechargeable battery pack (for secondary protection)  Packages • • TMSOP-8 SNT-8A 1 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00  Block Diagram VDD Overcharge detection comparator 1 VC1 + − Reference voltage 1 Overcharge detection comparator 2 VC2 Oscillator + Overcharge detection / release delay circuit − Reference voltage 2 Overcharge detection comparator 3 VC3 + Control circuit − Reference voltage 3 Overcharge detection comparator 4 VC4 + − Reference voltage 4 VC5 Overcharge detection comparator 5 + − Reference voltage 5 VSS *1. The CO pin is connected only to Nch transistor in the case of Nch open-drain output. The CO pin is connected only to Pch transistor in the case of Pch open-drain output. Remark The diodes in the figure are parasitic diodes. Figure 1 2 CO*1 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series  Product Name Structure 1. Product name S-8215A xx - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and IC packing specifications*1 K8T2: TMSOP-8, Tape I8T1: SNT-8A, Tape Serial code*2 Sequentially set from AA to AZ *1. Refer to the tape drawing. *2. Refer to "3. Product name list". 2. Packages Table 1 Package Drawing Codes Package Name TMSOP-8 SNT-8A Dimension FM008-A-P-SD PH008-A-P-SD Tape FM008-A-C-SD PH008-A-C-SD Reel FM008-A-R-SD PH008-A-R-SD Land − PH008-A-L-SD 3 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00 3. Product name list 3. 1 TMSOP-8 Table 2 Product Name Overcharge Detection Voltage [VCU] 4.300 V 4.275 V 4.150 V 4.350 V 4.325 V 4.220 V 4.325 V 4.250 V 4.400 V 4.150 V 4.150 V 4.150 V 4.150 V 4.350 V 4.275 V 4.275 V 4.500 V 4.275 V 4.275 V 3.750 V 4.300 V 4.325 V 4.325 V 4.325 V 4.275 V Overcharge Hysteresis Voltage [VHC] −0.300 V −0.050 V −0.250 V −0.250 V −0.050 V −0.100 V −0.300 V −0.250 V −0.100 V −0.050 V −0.500 V −0.050 V −0.500 V −0.250 V −0.500 V −0.050 V −0.100 V −0.200 V −0.050 V −0.100 V −0.300 V −0.050 V −0.300 V −0.400 V −0.050 V Overcharge Detection Delay Time [tCU] 4.0 s 2.0 s 1.0 s 2.0 s 1.0 s 1.0 s 1.0 s 1.0 s 2.0 s 2.0 s 2.0 s 2.0 s 2.0 s 4.0 s 1.0 s 1.0 s 4.0 s 2.0 s 2.0 s 1.0 s 1.0 s 8.0 s 8.0 s 8.0 s 1.0 s Output Form S-8215AAA-K8T2U CMOS output S-8215AAB-K8T2U Nch open-drain output S-8215AAC-K8T2U CMOS output S-8215AAD-K8T2U CMOS output S-8215AAE-K8T2U Nch open-drain output S-8215AAF-K8T2U CMOS output S-8215AAH-K8T2U Nch open-drain output S-8215AAI-K8T2U CMOS output S-8215AAJ-K8T2U CMOS output S-8215AAK-K8T2U Nch open-drain output S-8215AAL-K8T2U Nch open-drain output S-8215AAM-K8T2U CMOS output S-8215AAN-K8T2U CMOS output S-8215AAO-K8T2U CMOS output S-8215AAP-K8T2U CMOS output S-8215AAQ-K8T2U CMOS output S-8215AAR-K8T2U CMOS output S-8215AAS-K8T2U CMOS output S-8215AAT-K8T2U CMOS output S-8215AAU-K8T2U CMOS output S-8215AAV-K8T2U CMOS output S-8215AAW-K8T2U CMOS output S-8215AAX-K8T2U CMOS output S-8215AAY-K8T2U CMOS output S-8215AAZ-K8T2U Nch open-drain output Remark Please contact our sales office for products other than the above. Output Logic Active "H" Active "L" Active "H" Active "H" Active "L" Active "H" Active "L" Active "H" Active "H" Active "L" Active "L" Active "L" Active "L" Active "H" Active "H" Active "H" Active "H" Active "L" Active "L" Active "H" Active "H" Active "H" Active "H" Active "H" Active "L" 3. 2 SNT-8A Table 3 Product Name S-8215AAA-I8T1U S-8215AAG-I8T1U S-8215AAV-I8T1U Remark 4 Overcharge Detection Voltage [VCU] 4.300 V 4.220 V 4.300 V Overcharge Hysteresis Voltage [VHC] −0.300 V −0.050 V −0.300 V Overcharge Detection Delay Time [tCU] 4.0 s 1.0 s 1.0 s Output Form CMOS output CMOS output CMOS output Please contact our sales office for products other than the above. Output Logic Active "H" Active "H" Active "H" BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series  Pin Configurations 1. TMSOP-8 Table 4 Pin No. Symbol 1 VDD 2 VC1 Top view 1 2 3 4 8 7 6 5 Figure 2 3 VC2 4 VC3 5 VC4 6 VC5 7 VSS 8 CO Description Input pin for positive power supply Positive voltage connection pin of battery 1 Negative voltage connection pin of battery 1 Positive voltage connection pin of battery 2 Negative voltage connection pin of battery 2 Positive voltage connection pin of battery 3 Negative voltage connection pin of battery 3 Positive voltage connection pin of battery 4 Negative voltage connection pin of battery 4 Positive voltage connection pin of battery 5 Input pin for negative power supply Negative voltage connection pin of battery 5 FET gate connection pin for charge control 2. SNT-8A Table 5 Pin No. Top view 1 2 3 4 8 7 6 5 Figure 3 Symbol 1 2 VDD VC1 3 VC2 4 VC3 5 VC4 6 VC5 7 VSS 8 CO Description Input pin for positive power supply Positive voltage connection pin of battery 1 Negative voltage connection pin of battery 1 Positive voltage connection pin of battery 2 Negative voltage connection pin of battery 2 Positive voltage connection pin of battery 3 Negative voltage connection pin of battery 3 Positive voltage connection pin of battery 4 Negative voltage connection pin of battery 4 Positive voltage connection pin of battery 5 Input pin for negative power supply Negative voltage connection pin of battery 5 FET gate connection pin for charge control 5 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00  Absolute Maximum Ratings Table 6 (Ta = +25°C unless otherwise specified) Item Symbol Applied Pin Absolute Maximum Rating VSS − 0.3 to VSS + 28 Input voltage between VDD pin and VSS pin VDS VDD Input pin voltage VIN VC1, VC2, VC3, VC4, VC5 VSS − 0.3 to VDD + 0.3 VSS − 0.3 to VDD + 0.3 CMOS output product CO pin VSS − 0.3 to VSS + 28 Nch open-drain output product VCO CO output voltage VDD − 28 to VDD + 0.3 Pch open-drain output product 650*1 TMSOP-8 Power − PD dissipation SNT-8A 450*1 − −40 to +85 Operation ambient temperature Topr Storage temperature Tstg − Unit V V V V V mW mW °C −40 to +125 *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Power Dissipation (PD) [mW] 800 TMSOP-8 600 SNT-8A 400 200 0 0 150 100 50 Ambient Temperature (Ta) [°C] Figure 4 Power Dissipation of Package (When Mounted on Board) 6 °C BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series  Electrical Characteristics Table 7 Item Symbol Condition (Ta = +25°C unless otherwise specified) Test Min. Typ. Max. Unit Circuit Detection Voltage Overcharge detection voltage n (n = 1, 2, 3, 4, 5) VCUn − Ta = −5°C to +55°C*1 −550 mV ≤ VHC ≤ −300 mV Overcharge hysteresis voltage n (n = 1, 2, 3, 4, 5) VHCn −250 mV ≤ VHC ≤ −100 mV VHC = −50 mV, 0 mV VCU − 0.025 VCU − 0.030 VHC × 0.8 VHC − 0.050 VHC − 0.025 Input Voltage Operation voltage between VDSOP 3.6 − VDD pin and VSS pin Input Current Current consumption during IOPE V1 = V2 = V3 = V4 = V5 = VCU − 1.0 V − operation Current consumption during V1 = V2 = V3 = V4 = V5 = 2.3 V IOPED − overdischarge VC1 pin current IVC1 V1 = V2 = V3 = V4 = V5 = VCU − 1.0 V − VCn pin current IVCn V1 = V2 = V3 = V4 = V5 = VCU − 1.0 V −0.3 (n = 2, 3, 4, 5) Output Current (CMOS Output Product) CO pin sink current ICOL 0.4 − CO pin source current 20 ICOH − Output Current (Nch Open-drain Output Product) CO pin sink current ICOL 0.4 − CO pin leakage current "L" ICOLL − − Output Current (Pch Open-drain Output Product) CO pin source current ICOH 20 − CO pin leakage current "H" ICOLH − − Delay Time Overcharge detection delay tCU − tCU × 0.8 time Overcharge timer reset 6 tTR − delay time Transition time to test mode tTST − − VCU + 0.025 VCU + 0.030 VHC × 1.2 VHC + 0.050 VHC + 0.025 − VCU V 1 V 1 V 1 V 1 V 1 26 V − 1.6 3.0 μA 3 0.8 1.7 μA 3 0.2 0.4 μA 4 0 0.3 μA 4 − − − − mA μA 5 5 − − − 0.1 mA μA 5 5 − − − 0.1 μA μA 5 5 tCU tCU × 1.2 s 1 12 20 ms 1 − 80 ms 2 VCU VHC VHC VHC *1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 7 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00  Test Circuits 1. Overcharge detection voltage, overcharge hysteresis voltage (Test circuit 1) 1. 1 Overcharge detection voltage n (VCUn) Set V1 = V2 = V3 = V4 = V5 = VCU − 0.05 V. The overcharge detection voltage 1 (VCU1) is the V1 voltage when the CO pin’s output changes after the voltage of V1 has been gradually increased. Overcharge detection voltage (VCUn) (n = 2 to 5) can be determined in the same way as when n = 1. 1. 2 Overcharge hysteresis voltage n (VHCn) Set V1 = VCU + 0.05 V, V2 = V3 = V4 = V5 = 2.5 V. The overcharge hysteresis voltage 1 (VHC1) is the difference between V1 voltage and VCU1 when the CO pin's output changes after the V1 voltage has been gradually decreased. Overcharge hysteresis voltage (VHCn) (n = 2 to 5) can be determined in the same way as when n = 1. 2. Output current (Test circuit 5) 2. 1 Output current of CMOS output product Set SW1 and SW2 to OFF. 2. 1. 1 Active "H" (1) CO pin source current (ICOH) Set SW1 to ON after setting V1 = 5.5 V, V2 to V5 = 3.0 V, V6 = 0.5 V. I1 is the CO pin source current (ICOH) at that time. (2) CO pin sink current (ICOL) Set SW2 to ON after setting V1 to V5 = 3.5 V, V7 = 0.5 V. I2 is the CO pin sink current (ICOL) at that time. 2. 1. 2 Active "L" (1) CO pin source current (ICOH) Set SW1 to ON after setting V1 to V5 = 3.5 V, V6 = 0.5 V. I1 is the CO pin source current (ICOH) at that time. (2) CO pin sink current (ICOL) Set SW2 to ON after setting V1 = 5.5 V, V2 to V5 = 3.0 V, V7 = 0.5 V. I2 is the CO pin sink current (ICOL) at that time. 2. 2 Output current of Nch open-drain output product Set SW1 and SW2 to OFF. 2. 2. 1 Active "H" (1) CO pin leakage current "L" (ICOLL) Set SW2 to ON after setting V1 = 5.5 V, V2 to V5 = 3.0 V, V7 = 17.5 V. I2 is the CO pin leakage current "L" (ICOLL) at that time. (2) CO pin sink current (ICOL) Set V1 to V5 = 3.5 V, V7 = 0.5 V. I2 is the CO pin sink current (ICOL) at that time. 2. 2. 2 Active "L" (1) CO pin leakage current "L" (ICOLL) Set SW2 to ON after setting V1 to V5 = 3.5 V, V7 = 17.5 V. I2 is the CO pin leakage current "L" (ICOLL) at that time. (2) CO pin sink current (ICOL) Set V1 = 5.5 V, V2 to V5 = 3.0 V, V7 = 0.5 V. I2 is the CO pin sink current (ICOL) at that time. 8 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series 2. 3 Output current of Pch open-drain output product Set SW1 and SW2 to OFF. 2. 3. 1 Active "H" (1) CO pin source current (ICOH) Set SW1 to ON after setting V1 = 5.5 V, V2 to V5 = 3.0 V, V6 = 0.5 V. I1 is the CO pin source current (ICOH) at that time. (2) CO pin leakage current "H" (ICOLH) Set V1 to V5 = 3.5 V, V6 = 17.5 V. I1 is the CO pin leakage current "H" (ICOLH) at that time. 2. 3. 2 Active "L" (1) CO pin source current (ICOH) Set SW1 to ON after setting V1 to V5 = 3.5 V, V6 = 0.5 V. I1 is the CO pin source current (ICOH) at that time. (2) CO pin leakage current "H" (ICOLH) Set V1 = 5.5 V, V2 to V5 = 3.0 V, V6 = 17.5 V. I1 is the CO pin leakage current "H" (ICOLH) at that time. 3. Overcharge detection delay time (tCU) (Test circuit 1) Increase V1 up to 5.0 V after setting V1 = V2 = V3 = V4 = V5 = 3.5 V. The overcharge detection delay time (tCU) is the time period until the CO pin output changes. 4. Overcharge timer reset delay time (tTR) (Test circuit 1) Increase V1 up to 5.0 V (first rise), and decrease V1 down to 3.5 V within tCU after setting V1 = V2 = V3 = V4 = V5 = 3.5 V. After that, increase V1 up to 5.0 V again (second rise), and detect the time period till the CO pin output changes. When the period from when V1 has fallen to the second rise is short, CO pin output changes after tCU has elapsed since the first rise. If the period is gradually made longer, CO pin output changes after tCU has elapsed since the second rise. The overcharge timer reset delay time (tTR) is the period from V1 fall till the second rise at that time. 5. Transition time to test mode (tTST) (Test circuit 2) Increase V6 up to 5.0 V, and decrease V6 again to 0 V after setting V1 = V2 = V3 = V4 = V5 = 3.5 V, and V6 = 0 V. When the period from when V6 was raised to when it has fallen is short, if an overcharge detection operation is performed subsequently, the delay time is tCU. However, when the period from when V6 is raised to when it has fallen is gradually made longer, the delay time during the subsequent overcharge detection operation is shorter than tCU. The transition time to test mode (tTST) is the period from when V6 was raised to when it has fallen at that time. 9 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00 S-8215A Series VDD S-8215A Series CO VC1 VC1 VC5 V2 VC3 V5 V1 V4 V2 VC2 VC5 VC3 VC4 V4 V3 Figure 5 Test Circuit 1 IOPE IOPED Figure 6 Test Circuit 2 S-8215A Series S-8215A Series VDD CO VDD CO VC1 VSS A IVC2 VC1 VSS A VC2 VC5 IVC5 A VC4 IVC4 A IVC1 A V5 V1 VC2 VC5 VC3 V1 V4 V2 V2 IVC3 A VC4 V3 VC3 V3 Figure 7 Test Circuit 3 Figure 8 Test Circuit 4 V6 A I1 SW1 S-8215A Series VDD CO VC1 VSS VC2 VC5 VC3 VC4 V1 SW2 V5 V2 V4 V3 Figure 9 Test Circuit 5 10 VSS V5 VC4 V3 CO V VSS V1 VC2 VDD V6 V A I2 V7 V V5 V4 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series  Operation Remark Refer to " Battery Protection IC Connection Examples". 1. Normal status If the voltage of each of the batteries is lower than "the overcharge detection voltage n (VCUn) + the overcharge hysteresis voltage n (VHCn)", the CO pin output changes to "L" (Active "H") or "H" (Active L"). This is called normal status. 2. Overcharge status When the voltage of one of the batteries exceeds VCUn during charging under normal status and the status is retained for the overcharge detection delay time (tCU) or longer, the CO pin output changes. This is called overcharge status. Connecting FET to the CO pin provides charge control and a second protection. If the voltage of each of the batteries is lower than VCUn + VHCn and the status is retained for 2.0 ms typ. or longer, the S-8215A Series returns to normal status. 3. Overcharge timer reset function When an overcharge release noise that forces the voltage of one of the batteries temporarily below VCUn is input during tCU from when VCUn is exceeded to when charging is stopped, tCU is continuously counted if the time the overcharge release noise persists is shorter than the overcharge timer reset delay time (tTR). Under the same conditions, if the time the overcharge release noise persists is tTR or longer, counting of tCU is reset once. After that, when VCUn has been exceeded, counting tCU resumes. 11 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00 4. Test mode The overcharge detection delay time (tCU) can be shortened by entering the test mode. The test mode can be set by retaining the VDD pin voltage 5.0 V or more higher than the VC1 pin voltage for the transition time to test mode (tTST) or longer. The status is retained by the internal latch and the test mode is retained even if the VDD pin voltage is decreased to the same voltage as that of the VC1 pin voltage. After that, the latch for retaining the test mode is reset and the S-8215A Series exits from test mode under the overcharge status. VDD pin voltage VC1 pin voltage 5.0 V or more Pin voltage VCUn VHCn Battery voltage (n = 1 to 5) Test mode tTST = 80 ms max. CO pin (Active "H") CO pin (Active "L") 32 ms typ. 2.0 ms typ. Figure 10 Caution 12 1. When the VDD pin voltage is decreased to lower than the UVLO voltage of 2 V typ., the S-8215A Series exits from test mode. 2. Set the test mode when no batteries are overcharged. 3. The overcharge timer reset delay time (tTR) is not shortened in the test mode. BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series  Timing Charts 1. Overcharge detection operation VHCn VCUn Battery voltage (n = 1 to 5) tTR or longer CO pin (Active "H") tTR or shorter tCU or shorter CO pin (Active "L") tCU 2.0 ms typ. Figure 11 13 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00 2. Overcharge timer reset operation VHCn tTR or shorter tTR or longer tTR or shorter VCUn Battery voltage (n = 1 to 5) tTR CO pin (Active "H") tCU or shorter Timer reset tCU CO pin (Active "L") Figure 12 14 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series  Battery Protection IC Connection Examples 1. 5-serial cell SCP EB+ VDD RVDD CVDD VC1 R1 BAT1 C1 VC2 R2 BAT2 S-8215A Series C2 VC3 R3 BAT3 VC4 R4 BAT4 FET C3 CO DP C4 VC5 R5 BAT5 C5 VSS EB− Figure 13 Table 8 Constants for External Components No. 1 2 3 Caution Part R1 to R5 C1 to C5, CVDD RVDD Min. 0.5 0.01 50 Typ. 1 0.1 100 Max. 10 1 500 Unit kΩ μF Ω 1. The above constants are subject to change without prior notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constants will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constants. 3. R1 to R5 should be the same constant. C1 to C5 and CVDD should be the same constant. 4. Set RVDD, C1 to C5, and CVDD so that the condition (RVDD) × (C1 to C5, CVDD) ≥ 5 × 10−6 is satisfied. 5. Set R1 to R5, C1 to C5, and CVDD so that the condition (R1 to R5) × (C1 to C5, CVDD) ≥ 1 × 10−4 is satisfied. 6. Since the CO pin may become detection status transiently when the battery is being connected, connect the positive terminal of BAT1 last in order to prevent the three terminal protection fuse from cutoff. 15 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00 2. 4-serial cell SCP EB+ VDD RVDD CVDD VC1 R1 BAT1 C1 VC2 R2 BAT2 S-8215A Series C2 VC3 R3 BAT3 C3 VC4 R4 BAT4 FET CO DP C4 VC5 VSS EB− Figure 14 Table 9 Constants for External Components No. 1 2 3 Caution 16 Part R1 to R4 C1 to C4, CVDD RVDD Min. 0.5 0.01 50 Typ. 1 0.1 100 Max. 10 1 500 Unit kΩ μF Ω 1. The above constants are subject to change without prior notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constants will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constants. 3. R1 to R4 should be the same constant. C1 to C4 and CVDD should be the same constant. 4. Set RVDD, C1 to C4, and CVDD so that the condition (RVDD) × (C1 to C4, CVDD) ≥ 5 × 10−6 is satisfied. 5. Set R1 to R4, C1 to C4, and CVDD so that the condition (R1 to R4) × (C1 to C4, CVDD) ≥ 1 × 10−4 is satisfied. 6. Since the CO pin may become detection status transiently when the battery is being connected, connect the positive terminal of BAT1 last in order to prevent the three terminal protection fuse from cutoff. BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series 3. 3-serial cell SCP EB+ VDD RVDD CVDD VC1 R1 BAT1 C1 VC2 R2 BAT2 S-8215A Series C2 VC3 R3 BAT3 FET C3 VC4 CO DP VC5 VSS EB− Figure 15 Table 10 Constants for External Components No. 1 2 3 Caution Part R1 to R3 C1 to C3, CVDD RVDD Min. 0.5 0.01 50 Typ. 1 0.1 100 Max. 10 1 500 Unit kΩ μF Ω 1. The above constants are subject to change without prior notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constants will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constants. 3. R1 to R3 should be the same constant. C1 to C3 and CVDD should be the same constant. 4. Set RVDD, C1 to C3, and CVDD so that the condition (RVDD) × (C1 to C3, CVDD) ≥ 5 × 10−6 is satisfied. 5. Set R1 to R3, C1 to C3, and CVDD so that the condition (R1 to R3) × (C1 to C3, CVDD) ≥ 1 × 10−4 is satisfied. 6. Since the CO pin may become detection status transiently when the battery is being connected, connect the positive terminal of BAT1 last in order to prevent the three terminal protection fuse from cutoff. 17 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00 [For SCP, contact] Global Sales & Marketing Division, Dexerials Corporation Gate City Osaki East Tower 8F, 1-11-2 Osaki, Shinagawa-ku, Tokyo, 141-0032, Japan TEL +81-3-5435-3946 Contact Us: http://www.dexerials.jp/en/  Precautions 18 • Do not connect batteries charged with VCUn + VHCn or higher. If the connected batteries include a battery charged with VCUn + VHCn or higher, the S-8215A series may become overcharge status after all pins are connected. • In some application circuits, even if an overcharged battery is not included, the order of connecting batteries may be restricted to prevent transient output of CO detection pulses when the batteries are connected. Perform thorough evaluation with the actual application circuit. • Before the battery connection, short-circuit the battery side pins RVDD and R1, shown in the figure in " Battery Protection IC Connection Examples". • The application conditions for the input voltage, output voltage, and load current should not exceed the package power dissipation. • Do not apply to this IC an electrostatic discharge that exceeds the performance ratings of the built-in electrostatic protection circuit. • ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement of patents owned by a third party by products including this IC. BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series  Characteristics (Typical Data) 1. Detection voltage 1. 2 VCU + VHC vs. Ta 1. 1 VCU vs. Ta VHC = −0.3 V + VCU = 4.3 V −40 −25 0 25 Ta [°C] 50 −40 −25 75 85 0 25 Ta [°C] 50 75 85 2. Current consumption 2. 1 IOPE vs. Ta 2. 2 IOPED vs. Ta VDD = 11.5 V μ μ VDD = 16.5 V −40 −25 0 25 Ta [°C] 50 75 85 −40 −25 0 25 Ta [°C] 50 75 85 2. 3 IOPE vs. VDD Ta = +25°C 60 IOPE [μA] 50 40 30 20 10 0 0 5 10 15 20 VDD [V] 25 30 19 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) S-8215A Series Rev.2.6_00 3. Delay time 3. 1 tCU vs. Ta VDD = 19 V −40 −25 0 25 Ta [°C] 50 75 85 4. Output current 4. 1 ICOL vs. VDD 4. 2 ICOH vs. VDD Ta = +25°C 20 750 7.5 5.0 2.5 0.0 Ta = +25°C 1000 ICOH [μA] ICOL [mA] 10.0 500 250 0 0 5 10 15 20 VDD [V] 25 30 0 5 10 15 20 VDD [V] 25 30 BATTERY PROTECTION IC FOR 3-SERIAL TO 5-SERIAL CELL PACK (SECONDARY PROTECTION) Rev.2.6_00 S-8215A Series  Marking Specifications 1. TMSOP-8 8 Top view 7 6 5 (1): (2) to (4): (5): (6) to (8): Blank Product code (Refer to Product name vs. Product code) Blank Lot number (1) (2) (3) (4) (5) (6) (7) (8) 1 2 3 4 Product name vs. Product code Product Code (2) (3) (4) V 6 A V 6 B V 6 C V 6 D V 6 E V 6 F V 6 H V 6 I V 6 J V 6 K V 6 L V 6 M Product Name S-8215AAA-K8T2U S-8215AAB-K8T2U S-8215AAC-K8T2U S-8215AAD-K8T2U S-8215AAE-K8T2U S-8215AAF-K8T2U S-8215AAH-K8T2U S-8215AAI-K8T2U S-8215AAJ-K8T2U S-8215AAK-K8T2U S-8215AAL-K8T2U S-8215AAM-K8T2U Product Name S-8215AAN-K8T2U S-8215AAO-K8T2U S-8215AAP-K8T2U S-8215AAQ-K8T2U S-8215AAR-K8T2U S-8215AAS-K8T2U S-8215AAT-K8T2U S-8215AAU-K8T2U S-8215AAV-K8T2U S-8215AAW-K8T2U S-8215AAX-K8T2U S-8215AAY-K8T2U S-8215AAZ-K8T2U Product Code (2) (3) (4) V 6 N V 6 O V 6 P V 6 Q V 6 R V 6 S V 6 T V 6 U V 6 V V 6 W V 6 X V 6 Y V 6 Z 2. SNT-8A 8 Top view 7 6 5 (1): (2) to (4): (5), (6): (7) to (11): (1) (2) (3) (4) Blank Product code (Refer to Product name vs. Product code) Blank Lot number (5) (6) (7) (8) (9) (10) (11) 1 2 3 4 Product name vs. Product code Product Name S-8215AAA-I8T1U S-8215AAG-I8T1U S-8215AAV-I8T1U Product Code (2) (3) (4) V 6 A V 6 G V 6 V 21 2.90±0.2 8 5 1 4 0.13±0.1 0.2±0.1 0.65±0.1 No. FM008-A-P-SD-1.2 TITLE TMSOP8-A-PKG Dimensions No. FM008-A-P-SD-1.2 ANGLE UNIT mm ABLIC Inc. 2.00±0.05 4.00±0.1 4.00±0.1 1.00±0.1 +0.1 1.5 -0 1.05±0.05 0.30±0.05 3.25±0.05 4 1 5 8 Feed direction No. FM008-A-C-SD-2.0 TITLE TMSOP8-A-Carrier Tape FM008-A-C-SD-2.0 No. ANGLE UNIT mm ABLIC Inc. 16.5max. 13.0±0.3 Enlarged drawing in the central part 13±0.2 (60°) (60°) No. FM008-A-R-SD-1.0 TITLE TMSOP8-A-Reel No. FM008-A-R-SD-1.0 QTY. ANGLE UNIT mm ABLIC Inc. 4,000 1.97±0.03 8 7 6 5 3 4 +0.05 1 0.5 2 0.08 -0.02 0.48±0.02 0.2±0.05 No. PH008-A-P-SD-2.1 TITLE SNT-8A-A-PKG Dimensions No. PH008-A-P-SD-2.1 ANGLE UNIT mm ABLIC Inc. +0.1 ø1.5 -0 2.25±0.05 4.0±0.1 2.0±0.05 ø0.5±0.1 0.25±0.05 0.65±0.05 4.0±0.1 4 321 5 6 78 Feed direction No. PH008-A-C-SD-2.0 TITLE SNT-8A-A-Carrier Tape No. PH008-A-C-SD-2.0 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. PH008-A-R-SD-1.0 TITLE SNT-8A-A-Reel No. PH008-A-R-SD-1.0 QTY. ANGLE UNIT mm ABLIC Inc. 5,000 0.52 2.01 2 0.52 0.2 0.3 1. 2. 1 (0.25 mm min. / 0.30 mm typ.) (1.96 mm ~ 2.06 mm) 1. 2. 3. 4. 0.03 mm SNT 1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.). 2. Do not widen the land pattern to the center of the package (1.96 mm to 2.06mm). Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package. 2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm or less from the land pattern surface. 3. Match the mask aperture size and aperture position with the land pattern. 4. Refer to "SNT Package User's Guide" for details. 1. 2. (0.25 mm min. / 0.30 mm typ.) (1.96 mm ~ 2.06 mm) TITLE No. PH008-A-L-SD-4.1 SNT-8A-A -Land Recommendation PH008-A-L-SD-4.1 No. ANGLE UNIT mm ABLIC Inc. Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described herein. 4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to the use of the products outside their specified ranges. 5. Before using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products are strictly prohibited from using, providing or exporting for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear, biological or chemical weapons or missiles, or use any other military purposes. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by ABLIC, Inc. Do not apply the products to the above listed devices and equipments. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of the products. 9. In general, semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system in which the products are used must be sufficiently evaluated and judged whether the products are allowed to apply for the system on customer's own responsibility. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express permission of ABLIC Inc. 14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales representative. 15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into the English language and the Chinese language, shall be controlling. 2.4-2019.07 www.ablic.com
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