FM1106-GA

AEC Q100 Grade 1 Compliant FM1106 Nonvolatile 3V Dual State Saver Features Nonvolatile State Saver  Logic States Retained in Absence of Power  Outputs Automatically Restored at Power-up  Unlimited Number of State Changes  Max tPD 50ns at 2.7V  Max Frequency 900 kHz Low Power Operation  Supply voltage of 2.7V to 3.6V  5 A Standby Current (+85C) Overview Pin Configuration The FM1106 is an innovative FRAM-based device that stores inputs like conventional logic and retains the stored state in the absence of power. This product solves three basic problems in an elegant fashion. First, it provides continuous access to nonvolatile system settings without performing a memory read operation or using dedicated processor I/O pins. Second, it allows the storage of signals that may change frequently and possibly without notice. Third, it allows the nonvolatile storage of a system setting without the system overhead and extra pins of a serial memory. Functionally, the inputs are stored and passed to the output on the rising edge of the clock CLK. This unique product serves a variety of applications. Here are a few applications:      Control relays or valves with automatic setting on power-up without processor intervention Interface to soft/momentary front-panel switch and indicator lamp. Capture switch settings and drive LEDs without processor intervention Replaces jumpers & control signal routing Initialize state of I/O card signals Eliminate the overhead of serial memory for systems needing only a bit of data This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s internal qualification testing and has reached production status. Rev. 4.0 Oct. 2012 Industry Standard Configuration  Automotive Temperature -40 C to +125 C o Qualified to AEC Q100 Specification  8-pin “Green”/RoHS SOIC Package VDD Q0 D1 1 8 EN 2 7 3 6 CLK 4 5 D0 VSS Q1 Pin Names DN QN EN CLK VDD VSS Function Data In Data Out Enable Clock Supply Voltage Ground Ordering Information FM1106-GA FM1106-GATR Dual State Saver, 8-pin “Green”/RoHS SOIC, Automotive Grade 1 Dual State Saver, 8-pin “Green”/RoHS SOIC, Automotive Grade 1, Tape&Reel Ramtron International Corporation 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com Page 1 of 8 FM1106 - Automotive Temp. Block Diagram and Truth Table DN NV State Saver CLK EN QN EN H H H L L H X ↑ Q0 INPUTS CLK ↑ ↑ H or L X Dn L H X X OUTPUT Qn L H Q0 Hi-Z Low voltage level High voltage level Don’t Care CLK rising edge Previous output state before CLK ↑ Pin Descriptions Pin Name D 0, D 1 Q 0, Q 1 CLK EN VDD VSS Rev. 4.0 Oct. 2012 I/O Input Output Input Input Supply Supply Description Data inputs Data outputs Clock: On a rising edge of CLK, the DN inputs are transferred to the QN outputs. While CLK is high or low, the QN outputs do not change regardless of the state of the data inputs. See truth table. Enable. This active-high input enables the device. When low, inputs are ignored and updates to the nonvolatile cells are prevented. When high, the device operates normally. Power Supply (2.7V to 3.6V) Ground Page 2 of 8 FM1106 - Automotive Temp. Description Use of Enable Pin Nonvolatile storage applied to logic is a revolutionary concept. The FM1106 simplifies the design of system control functions. This product is unique because it remembers the stored output values in the absence of power. Any change in the latched state is automatically written to a nonvolatile ferroelectric latch. This function is possible due to the fast write time and extremely high write endurance of the underlying ferroelectric memory technology. The FM1106 has an enable pin that is intended to be used in conjunction with a system reset. An activelow reset may be tied directly to the EN pin. At power-up, /RESET will be held low for some time during which the data input and CLK pins will be ignored. Once the system comes out of reset and EN goes high, the outputs QN drive to the state that were previously latched and the device operates normally. When the EN pin is low, the outputs QN are tristated. The enable pin may be tied to VDD since the device integrates a power management circuit that monitors the VDD level during power cycles. Rev. 4.0 Oct. 2012 Page 3 of 8 FM1106 - Automotive Temp. Electrical Specifications Absolute Maximum Ratings Symbol Description VDD Power Supply Voltage with respect to VSS VIN Voltage on any signal pin with respect to VSS TSTG TLEAD VESD Ratings -1.0V to +5.0V -1.0V to +5.0V and VIN < VDD+1.0V -55C to + 125C 300 C Storage temperature Lead temperature (Soldering, 10 seconds) Electrostatic Discharge Voltage - Human Body Model (JEDEC Std JESD22-A114-B) - Charged Device Model (JEDEC Std JESD22-C101-A) - Machine Model (JEDEC Std JESD22-A115-A) Package Moisture Sensitivity Level 4kV 1kV 200V MSL-1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. DC Operating Conditions (TA = -40 C to +125 C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Typ Max Units Notes VDD Power Supply Voltage 2.7 3.6 V ISB Standby Current 1  A 5 @ +85C A 8 @ +125C CPD Power Dissipation Capacitance 165 pF 2 ILI Input Leakage Current 3 1 A ILO Output Leakage Current 3 1 A VIL Input Low Voltage -0.3 0.3 VDD V VIH Input High Voltage 0.7 VDD VDD + 0.3 V VOH Output High Voltage @ IOH = -1 mA VDD – 0.5 V VOL Output Low Voltage @ IOL = 1 mA (VDD=2.7V) 0.4 V @ IOL = 10 mA (VDD=2.7V) 0.8 V VHYS Input Hysteresis (CLK, EN) 200 mV 4 Notes 1. CLK = VSS, all other inputs at VDD or VSS. 2. To calculate device power dissipation, P D = CPD*VDD2*fi + CL*VDD2*fo, where fi is the input clk freq, fo is the output freq, 3. 4. and CL is the output load capacitance. Active current IDD may be calculated as IDD = CPD*VDD*fi, assuming outputs are floating. VIN or VOUT = VSS to VDD. This parameter is characterized but not tested. Capacitance (TA = 25 C , f=1.0 MHz, VDD = 3.3V) Symbol Parameter CI Input Capacitance Notes 1. Min - Max 8 Units pF Notes 1 This parameter is characterized but not tested. Rev. 4.0 Oct. 2012 Page 4 of 8 FM1106 - Automotive Temp. AC Parameters (TA = -40 C to +125 C, VDD = 2.7V to 3.6V, CL = 30 pF unless otherwise specified) Symbol Parameter Min Max fMAX Maximum Clock Frequency 900 tLOW CLK Low Period 0.3 tHIGH CLK High Period 0.3 tPD Propagation delay CLK to QN 50 tHZ EN Low to QN Hi-Z 25 tR Input Rise Time 100 tF Input Fall Time 100 tDS Data (DN) Setup Time to CLK  5 tDH Data (DN) Hold Time after CLK  10 tEHD EN Hold Time (EN High after CLK ) 50 tEH EN High Time 5 tEL EN Low Time 2 Notes 1. This parameter is characterized but not tested. Units kHz s s ns ns ns ns ns ns ns s s Power Cycling and Data Retention (TA = -40 C to +125 C, VDD = 2.7V to 3.6V, unless otherwise specified) Symbol Parameter Min Max Units Nonvolatile Data Retention Time 45 years tVDR VDD Rise Time 25 s/V tVDF VDD Fall Time 50 s/V tRES EN High to QN Restore Time 0.5 s tPDS EN Low to Power Down Time 1 s tEHFC EN High to First Clock (CLK ) after Power Up 4 s Notes 1. 2. 3. Notes 1 1 1 Notes 1 1 2 3 Slope measured at any point on VDD waveform. After power up, when EN goes high the nonvolatile latches are read and the values restored to the outputs QN. After power up, this is the minimum time required before a state change operation may occur. EN and VDD may be coincident at power up, and in this case tEHFC time is referenced to VDD (min) and CLK . Data Retention (VDD = 3.0V to 3.6V) Parameter Min Max Units Notes Data Retention 45 Years @ TA = 85C 9000 Hours @ TA = 125C Note : The device is guaranteed to retain data after both conditions have been applied : (1) 45 yrs at a temperature of 85C and (2) 9000 hrs at 125C. Typical Grade 1 Storage Profile Typical Grade 1 Operating Profile 25000 1600 1400 20000 1000 Hours Hours 1200 800 600 400 15000 10000 5000 200 0 0 70 75 80 85 90 95 100 105 110 115 120 125 Temperature (°C) Rev. 4.0 Oct. 2012 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 Temperature (°C) Page 5 of 8 FM1106 - Automotive Temp. AC Test Conditions Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load Capacitance 0.1 VDD to 0.9 VDD 10 ns 0.5 VDD 30pF FM1106 Signal Timing tEL EN 1/fMAX tEHD tHIGH tLOW tEH CLK tDS tHZ tDH D0 DN D1 tPD tPD previous QN tRES Q0 Q1 Q1 t=0 Power Cycle Timing D8 DLAST Q7 Q8 QLAST QLAST tPDS ~ EN VDD D0 ~ QN D7 D1 ~ DN ~ CLK VDD (MIN) Q0 Q1 tRES tEHFC VDD (MIN) ~ Rev. 4.0 Oct. 2012 Page 6 of 8 FM1106 - Automotive Temp. Mechanical Drawing 8-pin SOIC (JEDEC Standard MS-012 variation AA) Recommended PCB Footprint 7.70 3.90 ±0.10 3.70 6.00 ±0.20 2.00 Pin 1 0.65 1.27 4.90 ±0.10 1.27 0.33 0.51 0.25 0.50 1.35 1.75 0.10 0.25 0.10 mm 0- 8 0.19 0.25 45  0.40 1.27 Refer to JEDEC MS-012 for complete dimensions and notes. All dimensions in millimeters. SOIC Package Marking Scheme XXXXXXX-PT LLLLLLL RICYYWW Legend: XXXX= part number, P= package type, T= temp (A=automotive grade, blank=ind.) LLLLLLL= lot code RIC=Ramtron Int’l Corp, YY=year, WW=work week Example: FM1106, “Green” SOIC package, Automotive, Year 2008, Work Week 19 FM1106-GA A80007G RIC0819 Rev. 4.0 Oct. 2012 Page 7 of 8 FM1106 - Automotive Temp. Revision History Revision 1.0 1.1 3.0 4.0 Rev. 4.0 Oct. 2012 Date 11/26/2008 2/3/2009 4/15/2009 4th Oct 2012 Summary Created automotive temperature spec. Added tape and reel ordering information. Changed to Production status. Changed 125C retention time. Added obsolete text Page 8 of 8