C3D04060A

C3D04060A VRRM Silicon Carbide Schottky Diode IF (TC=135˚C) Z-Rec Rectifier ® 600 V = 6 A Qc =   10 nC Features • • • • • • • • = Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 Applications • • • • CASE PIN 2 Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C3D04060A TO-220-2 C3D04060 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V Continuous Forward Current 13.5 6 4 A TC=25˚C TC=135˚C TC=155˚C 17 12 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP = 10 ms, Half Sine Wave IF Note Fig. 3 IFRM Repetitive Peak Forward Surge Current IFSM Non-Repetitive Peak Forward Surge Current 30.5 20 A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 220 160 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 52 22.5 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-600V TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C 1 8.8 Nm lbf-in TO-220 Mounting Torque 1 Value C3D04060A Rev. G, 08-2016 M3 Screw 6-32 Screw Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.4 1.7 1.7 2.4 V IF = 4 A TJ=25°C IF = 4 A TJ=175°C Fig. 1 IR Reverse Current 5 10 25 100 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C Fig. 2 QC Total Capacitive Charge 10 nC VR = 400 V, IF = 4 A di/dt = 500 A/μs TJ = 25°C Fig. 5 C Total Capacitance 231 18.5 15 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 1.4 μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 2.9 °C/W Fig. 9 Typical Performance 100 12 10 TJ = -55 °C TJ = 75 °C TJ = 125 °C TJ = 175 °C 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 80 TJ = 175 °C 60 TJ = 125 °C R 6 Reverse LeakageICurrent, (mA) IRR (uA) 8 F Foward I Current, (A) IF (A) TJ = 25 °C C3D04060A Rev. G, 08-2016 3.5 4.0 TJ = 75 °C 40 TJ = 25 °C 20 TJ = -55 °C 0 0 200 400 600 800 (V) VR (V) ReverseVVoltage, R Figure 2. Reverse Characteristics 1000 1200 Typical Performance 50 60 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 45 40 30 40 (W) PP Tot(W) TOT IF(peak) (A) IF (A) 35 50 25 20 30 20 15 10 10 5 0 25 50 75 100 125 150 0 175 25 50 75 T ˚C TCC(°C) 175 Figure 4. Power Derating 250 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 200 12 10 Capacitance C (pF) (pF) CapacitiveQCharge, (nC) QC (nC) C 150 C Conditions: TJ = 25 °C 14 125 ˚C TTC (°C) Figure 3. Current Derating 16 100 8 6 4 150 100 50 2 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 C3D04060A Rev. G, 08-2016 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1,000 4 3 TJ_initial = 25 °C TJ_initial = 110 °C IIFSM (A) (A) 2.5 FSM 2 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 3.5 1.5 100 1 0.5 0 0 100 200 300 400 500 600 10 10E-6 700 ReverseVVoltage, (V) VR (V) Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (oC/W) Thermal Resistance (˚C/W) 1E-3 tp (s) Time, tp (s) R 1 100E-6 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 0.01 10E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C3D04060A Rev. G, 08-2016 100E-3 1 10E-3 Package Dimensions Package TO-220-2 POS PIN 1 PIN 2 CASE Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 6.477 B .235 .255 5.969 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 D1 .457-.490 11.60-12.45 typ D2 .277-.303 typ 7.04-7.70 typ D3 .244-.252 typ 6.22-6.4 typ E .590 .615 14.986 15.621 E1 .302 .326 7.68 8.28 E2 .227 251 5.77 6.37 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 L .025 .036 .635 .914 M .045 .055 1.143 1.550 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° 6° T 3° 6° 3° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C3D04060A TO-220-2 C3D04060 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D04060A Rev. G, 08-2016 Diode Model Diode Model CSD04060 Vf T = VT + If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VfT = VT + If * RT VT = 1.00 + (TJ * -1.1*10-3) RT = 0.069 + (TJ * 8.3*10-4) VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D04060A Rev. G, 08-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power