WAB300M12BM3

WAB300M12BM3 1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Technical Features VDS 1200 V IDS 300 A Package 105mm x 61.5 mm x 31.4 mm • • • • Industry Standard 62 mm Footprint High Humidity Operation THB-80 (HV-H3TRB) High Junction Temperature (175 °C) Operation Implements Switching Optimized Third Generation SiC MOSFET Technology • Low Inductance (10.2 nH) Design • Silicon Nitride Insulator and Copper Baseplate V+ G1 K1 Applications • • • • Railway & Traction Solar EV Chargers Industrial Automation & Testing Mid G2 K2 V- System Benefits • Fast Time-to-Market with Minimal Development Required for Transition from 62mm Si IGBT Packages • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC • High Reliability Material Selection Key Parameters (TC = 25˚C unless otherwise specified) Symbol Parameter VDS max Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value -8 +19 VGS op Gate-Source Voltage, Recommended Op. Value -4 +15 Typ. Max. Transient,