MBR12035 CTR

MBR12020CT thru MBR12040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF(AV) = 120 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit VRRM 20 30 35 40 V VRMS 14 21 25 28 V VDC Tj Tstg 20 -55 to 150 -55 to 150 30 -55 to 150 -55 to 150 35 -55 to 150 -55 to 150 40 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions Average forward current (per pkg) IF(AV) TC = 125 °C 120 120 120 120 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 800 800 800 800 A Maximum forward voltage (per leg) VF IFM = 60 A, Tj = 25 °C 0.70 0.70 0.70 0.70 V Reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 30 1 10 30 1 10 30 1 10 30 mA 0.80 0.80 0.80 0.80 °C/W Parameter MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12060CT(R) Unit Thermal characteristics Thermal resistance, junction-case, per leg Oct. 2018 RΘJC http://www.diodemodule.com/silicon_products/modules/mbr12020ct.pdf 1 MBR12020CT thru MBR12040CTR Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr12020ct.pdf 2 MBR12020CT thru MBR12040CTR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbr12020ct.pdf 3