C3D08065I

C3D08065I VRRM Silicon Carbide Schottky Diode Z-Rec® IF (TC=130˚C) Rectifier Q c Features • • • • • • 650 V = 8A = 21 nC Package 650-Volt Schottky Rectifier Ceramic Package Provides 2.5kV Isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-220 Isolated Benefits • • • • • = Electrically Isolated Package Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • • • HVAC Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter Stages AC/DC converters Maximum Package Marking C3D08065I Isolated TO-220-2 C3D08065I Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 16.5 8 7.5 A IF Test Conditions TC=25˚C TC=130˚C TC=135˚C Note Fig. 3 IFRM Repetitive Peak Forward Surge Current 29 19 A TC=25˚C, tP=10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 69 55 A TC=25˚C, tP=10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 650 530 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Power Dissipation 53.6 23.2 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-650V ∫i2dt i2t value 23.8 15 A2s -55 to +175 ˚C 1 8.8 Nm lbf-in Ptot TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque 1 Part Number C3D08065I Rev. C, 01-2018 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms M3 Screw 6-32 Screw Electrical Characteristics Symbol Parameter Typ. Max. Unit VF Forward Voltage 1.5 2.1 1.8 2.4 V IR Reverse Current 10 12 51 204 QC Total Capacitive Charge C EC Test Conditions Note IF = 8 A TJ=25°C IF = 8 A TJ=175°C Fig. 1 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 20 nC VR = 400 V, IF = 8A di/dt = 500 A/μs TJ = 25°C Fig. 5 Total Capacitance 395 37 32 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 Capacitance Stored Energy 3.0 μJ VR = 400 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Package Thermal Resistance from Junction to Case Typ. Unit Note 2.8 °C/W Fig. 8 Typical Performance 20 30 18 TJ = -55 °C 25 14 Reverse Leakage Current, IRR (mA) TJ = 25 °C TJ = 75 °C 12 10 IR (mA) TJ = 125 °C TJ = 175 °C F FowardICurrent, (A) IF (A) 16 8 6 4 2 TJ = 175 °C TJ = 125 °C 15 TJ = 75 °C 10 TJ = 25 °C TJ = -55 °C 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 20 C3D08065I Rev. C, 01-2018 3.5 4.0 0 100 200 300 400 500 600 700 800 900 1000 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics Typical Performance 60 60 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 50 40 PTot (W) IF(peak) (A) 40 50 30 30 20 20 10 10 0 25 50 75 100 125 150 0 175 25 50 75 TC ˚C 450 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 400 350 20 Capacitance C (pF)(pF) CapacitiveQCharge, (nC) QC (nC) C 150 Figure 4. Power Derating Conditions: TJ = 25 °C 25 125 TC ˚C Figure 3. Current Derating 30 100 15 10 300 250 200 150 100 5 50 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 C3D08065I Rev. C, 01-2018 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1,000 8 6 IFSM I (A) (A) 5 FSM 4 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 7 3 100 TJ = 25 °C TJ = 110 °C 2 1 0 0 100 200 300 400 500 600 10 10E-6 700 100E-6 ReverseVVoltage, (V) VR (V) 1E-3 tp (s) Time, tp (s) R Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (˚C/W) 0.5 1 0.3 0.1 0.05 100E-3 0.02 SinglePulse 0.01 10E-3 1E-3 1E-6 10E-6 100E-6 1E-3 10E-3 T (Sec) 100E-3 Figure 9. Transient Thermal Impedance 4 C3D08065I Rev. C, 01-2018 10E-3 1 10 Package Dimensions Package TO-220-2 Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C3D08065I Isolated TO-220-2 C3D08065I Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D08065I Rev. C, 01-2018 Diode Model Diode Model CSD04060 Vf T = VT + If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VfT = VT + If * RT VT = 0.95 + (TJ * -1.2*10-3) RT = 0.054 + (TJ * 5.5*10-4) VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D08065I Rev. C, 01-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power