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S-1009C21I-I4T1U

S-1009C21I-I4T1U

  • 厂商:

    ABLIC(艾普凌科)

  • 封装:

    SMD4

  • 描述:

    IC SUPERVISOR 1 CHANNEL SNT-4A

  • 详情介绍
  • 数据手册
  • 价格&库存
S-1009C21I-I4T1U 数据手册
S-1009 Series www.ablic.com www.ablicinc.com 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 © ABLIC Inc., 2009-2017 The S-1009 Series is a super high-accuracy voltage detector developed using CMOS technology. The detection voltage is fixed internally with an accuracy of 0.5%. It operates with super low current consumption of 270 nA typ. The release signal can be delayed by setting a capacitor externally. Delay time accuracy is 15%. Two output forms Nch open-drain and CMOS output are available. Compared with conventional CMOS voltage detectors, the S-1009 Series is the most suitable for the portable devices due to the super-low current consumption, super high-accuracy and small packages.  Features  Detection voltage:  Detection voltage accuracy:      Current consumption: Operation voltage range: Hysteresis width: Delay time accuracy: Output form:  Operation temperature range:  Lead-free (Sn 100%), halogen-free 0.8 V to 4.6 V (0.1 V step) 0.5% (2.4 V  VDET  4.6 V) 12 mV (0.8 V  VDET  2.4 V) 270 nA typ. (1.2 V  VDET  2.3 V) 0.6 V to 10.0 V (CMOS output product) 5% 1% 15% (CD = 4.7 nF) Nch open-drain output (active "L") CMOS output (active "L") Ta = 40°C to 85°C  Applications  Power monitor and reset for CPU and microcomputer  Constant voltage power monitor for TV, DVD recorder and home appliance  Power supply monitor for portable device such as notebook PC, digital still camera and mobile phone  Packages  SOT-23-5  SC-82AB  SNT-4A 1 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Block Diagrams 1. Nch open-drain output product VDD   *1 Delay circuit OUT *1 VREF *1 VSS CD *1. Parasitic diode Figure 1 2. CMOS output product VDD *1   *1 Delay circuit OUT *1 VREF *1 VSS CD *1. Parasitic diode Figure 2 2 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Product Name Structure Users can select the output form, detection voltage value, and package type for the S-1009 Series. Refer to "1. Product name" regarding the contents of product name, "2. Packages" regarding the package drawings and "3. Product name list" regarding details of product name. 1. Product name S-1009 x xx I - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and IC packing specifications*1 M5T1: SOT-23-5, Tape N4T1: SC-82AB, Tape I4T1: SNT-4A, Tape Operation temperature I: Ta = 40C to 85C Detection voltage value 08 to 46 (e.g., when the detection voltage is 1.5 V, it is expressed as 15.) Output form N: Nch open-drain output (active "L") C: CMOS output (active "L") *1. 2. Refer to the tape drawings. Packages Table 1 Package Name Package Drawing Codes Dimension Tape Reel Land SOT-23-5 MP005-A-P-SD MP005-A-R-SD  SC-82AB NP004-A-P-SD NP004-A-R-SD  SNT-4A PF004-A-P-SD MP005-A-C-SD NP004-A-C-SD NP004-A-C-S1 PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD 3 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 3. Product name list 3. 1 Nch open-drain output product Table 2 Detection Voltage 0.8 V  12 mV 0.9 V  12 mV 1.0 V  12 mV 1.1 V  12 mV 1.2 V  12 mV 1.3 V  12 mV 1.4 V  12 mV 1.5 V  12 mV 1.6 V  12 mV 1.7 V  12 mV 1.8 V  12 mV 1.9 V  12 mV 2.0 V  12 mV 2.1 V  12 mV 2.2 V  12 mV 2.3 V  12 mV 2.4 V  0.5% 2.5 V  0.5% 2.6 V  0.5% 2.7 V  0.5% 2.8 V  0.5% 2.9 V  0.5% 3.0 V  0.5% 3.1 V  0.5% 3.2 V  0.5% 3.3 V  0.5% 3.4 V  0.5% 3.5 V  0.5% 3.6 V  0.5% 3.7 V  0.5% 3.8 V  0.5% 3.9 V  0.5% 4.0 V  0.5% 4.1 V  0.5% 4.2 V  0.5% 4.3 V  0.5% 4.4 V  0.5% 4.5 V  0.5% 4.6 V  0.5% 4 SOT-23-5 S-1009N08I-M5T1U S-1009N09I-M5T1U S-1009N10I-M5T1U S-1009N11I-M5T1U S-1009N12I-M5T1U S-1009N13I-M5T1U S-1009N14I-M5T1U S-1009N15I-M5T1U S-1009N16I-M5T1U S-1009N17I-M5T1U S-1009N18I-M5T1U S-1009N19I-M5T1U S-1009N20I-M5T1U S-1009N21I-M5T1U S-1009N22I-M5T1U S-1009N23I-M5T1U S-1009N24I-M5T1U S-1009N25I-M5T1U S-1009N26I-M5T1U S-1009N27I-M5T1U S-1009N28I-M5T1U S-1009N29I-M5T1U S-1009N30I-M5T1U S-1009N31I-M5T1U S-1009N32I-M5T1U S-1009N33I-M5T1U S-1009N34I-M5T1U S-1009N35I-M5T1U S-1009N36I-M5T1U S-1009N37I-M5T1U S-1009N38I-M5T1U S-1009N39I-M5T1U S-1009N40I-M5T1U S-1009N41I-M5T1U S-1009N42I-M5T1U S-1009N43I-M5T1U S-1009N44I-M5T1U S-1009N45I-M5T1U S-1009N46I-M5T1U SC-82AB S-1009N08I-N4T1U S-1009N09I-N4T1U S-1009N10I-N4T1U S-1009N11I-N4T1U S-1009N12I-N4T1U S-1009N13I-N4T1U S-1009N14I-N4T1U S-1009N15I-N4T1U S-1009N16I-N4T1U S-1009N17I-N4T1U S-1009N18I-N4T1U S-1009N19I-N4T1U S-1009N20I-N4T1U S-1009N21I-N4T1U S-1009N22I-N4T1U S-1009N23I-N4T1U S-1009N24I-N4T1U S-1009N25I-N4T1U S-1009N26I-N4T1U S-1009N27I-N4T1U S-1009N28I-N4T1U S-1009N29I-N4T1U S-1009N30I-N4T1U S-1009N31I-N4T1U S-1009N32I-N4T1U S-1009N33I-N4T1U S-1009N34I-N4T1U S-1009N35I-N4T1U S-1009N36I-N4T1U S-1009N37I-N4T1U S-1009N38I-N4T1U S-1009N39I-N4T1U S-1009N40I-N4T1U S-1009N41I-N4T1U S-1009N42I-N4T1U S-1009N43I-N4T1U S-1009N44I-N4T1U S-1009N45I-N4T1U S-1009N46I-N4T1U SNT-4A S-1009N08I-I4T1U S-1009N09I-I4T1U S-1009N10I-I4T1U S-1009N11I-I4T1U S-1009N12I-I4T1U S-1009N13I-I4T1U S-1009N14I-I4T1U S-1009N15I-I4T1U S-1009N16I-I4T1U S-1009N17I-I4T1U S-1009N18I-I4T1U S-1009N19I-I4T1U S-1009N20I-I4T1U S-1009N21I-I4T1U S-1009N22I-I4T1U S-1009N23I-I4T1U S-1009N24I-I4T1U S-1009N25I-I4T1U S-1009N26I-I4T1U S-1009N27I-I4T1U S-1009N28I-I4T1U S-1009N29I-I4T1U S-1009N30I-I4T1U S-1009N31I-I4T1U S-1009N32I-I4T1U S-1009N33I-I4T1U S-1009N34I-I4T1U S-1009N35I-I4T1U S-1009N36I-I4T1U S-1009N37I-I4T1U S-1009N38I-I4T1U S-1009N39I-I4T1U S-1009N40I-I4T1U S-1009N41I-I4T1U S-1009N42I-I4T1U S-1009N43I-I4T1U S-1009N44I-I4T1U S-1009N45I-I4T1U S-1009N46I-I4T1U 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 3. 2 CMOS output product Table 3 Detection Voltage 0.8 V  12 mV 0.9 V  12 mV 1.0 V  12 mV 1.1 V  12 mV 1.2 V  12 mV 1.3 V  12 mV 1.4 V  12 mV 1.5 V  12 mV 1.6 V  12 mV 1.7 V  12 mV 1.8 V  12 mV 1.9 V  12 mV 2.0 V  12 mV 2.1 V  12 mV 2.2 V  12 mV 2.3 V  12 mV 2.4 V  0.5% 2.5 V  0.5% 2.6 V  0.5% 2.7 V  0.5% 2.8 V  0.5% 2.9 V  0.5% 3.0 V  0.5% 3.1 V  0.5% 3.2 V  0.5% 3.3 V  0.5% 3.4 V  0.5% 3.5 V  0.5% 3.6 V  0.5% 3.7 V  0.5% 3.8 V  0.5% 3.9 V  0.5% 4.0 V  0.5% 4.1 V  0.5% 4.2 V  0.5% 4.3 V  0.5% 4.4 V  0.5% 4.5 V  0.5% 4.6 V  0.5% SOT-23-5 S-1009C08I-M5T1U S-1009C09I-M5T1U S-1009C10I-M5T1U S-1009C11I-M5T1U S-1009C12I-M5T1U S-1009C13I-M5T1U S-1009C14I-M5T1U S-1009C15I-M5T1U S-1009C16I-M5T1U S-1009C17I-M5T1U S-1009C18I-M5T1U S-1009C19I-M5T1U S-1009C20I-M5T1U S-1009C21I-M5T1U S-1009C22I-M5T1U S-1009C23I-M5T1U S-1009C24I-M5T1U S-1009C25I-M5T1U S-1009C26I-M5T1U S-1009C27I-M5T1U S-1009C28I-M5T1U S-1009C29I-M5T1U S-1009C30I-M5T1U S-1009C31I-M5T1U S-1009C32I-M5T1U S-1009C33I-M5T1U S-1009C34I-M5T1U S-1009C35I-M5T1U S-1009C36I-M5T1U S-1009C37I-M5T1U S-1009C38I-M5T1U S-1009C39I-M5T1U S-1009C40I-M5T1U S-1009C41I-M5T1U S-1009C42I-M5T1U S-1009C43I-M5T1U S-1009C44I-M5T1U S-1009C45I-M5T1U S-1009C46I-M5T1U SC-82AB S-1009C08I-N4T1U S-1009C09I-N4T1U S-1009C10I-N4T1U S-1009C11I-N4T1U S-1009C12I-N4T1U S-1009C13I-N4T1U S-1009C14I-N4T1U S-1009C15I-N4T1U S-1009C16I-N4T1U S-1009C17I-N4T1U S-1009C18I-N4T1U S-1009C19I-N4T1U S-1009C20I-N4T1U S-1009C21I-N4T1U S-1009C22I-N4T1U S-1009C23I-N4T1U S-1009C24I-N4T1U S-1009C25I-N4T1U S-1009C26I-N4T1U S-1009C27I-N4T1U S-1009C28I-N4T1U S-1009C29I-N4T1U S-1009C30I-N4T1U S-1009C31I-N4T1U S-1009C32I-N4T1U S-1009C33I-N4T1U S-1009C34I-N4T1U S-1009C35I-N4T1U S-1009C36I-N4T1U S-1009C37I-N4T1U S-1009C38I-N4T1U S-1009C39I-N4T1U S-1009C40I-N4T1U S-1009C41I-N4T1U S-1009C42I-N4T1U S-1009C43I-N4T1U S-1009C44I-N4T1U S-1009C45I-N4T1U S-1009C46I-N4T1U SNT-4A S-1009C08I-I4T1U S-1009C09I-I4T1U S-1009C10I-I4T1U S-1009C11I-I4T1U S-1009C12I-I4T1U S-1009C13I-I4T1U S-1009C14I-I4T1U S-1009C15I-I4T1U S-1009C16I-I4T1U S-1009C17I-I4T1U S-1009C18I-I4T1U S-1009C19I-I4T1U S-1009C20I-I4T1U S-1009C21I-I4T1U S-1009C22I-I4T1U S-1009C23I-I4T1U S-1009C24I-I4T1U S-1009C25I-I4T1U S-1009C26I-I4T1U S-1009C27I-I4T1U S-1009C28I-I4T1U S-1009C29I-I4T1U S-1009C30I-I4T1U S-1009C31I-I4T1U S-1009C32I-I4T1U S-1009C33I-I4T1U S-1009C34I-I4T1U S-1009C35I-I4T1U S-1009C36I-I4T1U S-1009C37I-I4T1U S-1009C38I-I4T1U S-1009C39I-I4T1U S-1009C40I-I4T1U S-1009C41I-I4T1U S-1009C42I-I4T1U S-1009C43I-I4T1U S-1009C44I-I4T1U S-1009C45I-I4T1U S-1009C46I-I4T1U 5 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Pin Configurations 1. SOT-23-5 Table 4 Top view 5 Pin No. 4 1 2 3 *1. Figure 3 2. Symbol Description 1 OUT Voltage detection output pin 2 VDD Input voltage pin 3 VSS GND pin NC*1 4 No connection 5 CD Connection pin for delay capacitor The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. SC-82AB Table 5 Top view 4 3 1 2 Pin No. 1 2 3 4 Symbol VSS VDD CD OUT Description GND pin Input voltage pin Connection pin for delay capacitor Voltage detection output pin Figure 4 3. SNT-4A Table 6 Top view 1 2 4 3 Figure 5 6 Pin No. 1 2 3 4 Symbol VSS OUT CD VDD Description GND pin Voltage detection output pin Connection pin for delay capacitor Input voltage pin 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Absolute Maximum Ratings Table 7 (Ta = 25°C unless otherwise specified) Item Symbol Power supply voltage VDDVSS CD pin input voltage VCD Nch open-drain output product Output voltage VOUT CMOS output product Output current IOUT SOT-23-5 Power dissipation SC-82AB PD SNT-4A Operation ambient temperature Topr Storage temperature Tstg *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm  76.2 mm  t1.6 mm (2) Name: JEDEC STANDARD51-7 Unit 12 VSS0.3 to VDD  0.3 VSS0.3 to 12.0 VSS0.3 to VDD  0.3 50 600*1 350*1 300*1 40 to 85 40 to 125 V V V V mA mW mW mW °C °C The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. 700 Power Dissipation (PD) [mW] Caution Absolute Maximum Rating 600 500 SC-82AB 300 200 SNT-4A 100 0 Figure 6 SOT-23-5 400 0 150 100 50 Ambient Temperature (Ta) [C] Power Dissipation of Package (When Mounted on Board) 7 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Electrical Characteristics 1. Nch open-drain output product Table 8 Item Symbol Condition 0.8 V  VDET  2.4 V Detection voltage *1 VDET 2.4 V  VDET  4.6 V Hysteresis width Current consumption ISS Operation voltage VDD Output current  VHYS IOUT 0.8 V  VDET  1.2 V 1.2 V  VDET  2.3 V 2.3 V  VDET  3.6 V 3.6 V  VDET  4.6 V VDD = VDET  0.6 V  Output transistor Nch *2 VDS = 0.5 V VDD = 0.7 V S-1009N08 to 14 VDD = 1.2 V S-1009N15 to 46 VDD = 2.4 V S-1009N27 to 46 (Ta = 25°C unless otherwise specified) Test Min. Typ. Max. Unit Circuit VDET(S) VDET(S) V 1 VDET(S)  0.012  0.012 VDET(S) VDET(S) VDET(S) V 1  0.995  1.005 VDET VDET VDET V 1  0.04  0.05  0.06  0.30 0.90 A 2  0.27 0.90 A 2  0.42 0.90 A 2  0.39 0.90 A 2 0.7  10.0 V 1 0.14 0.40  mA 3 0.73 1.33  mA 3 1.47 2.39  mA 3 Output transistor Nch   0.08 A 3 VDD = 10.0 V, VOUT = 10.0 V Delay time tD CD = 4.7 nF 22.1 26.0 29.9 ms 4 0.8 V  V  0.9 V  180 430 ppm/°C 1 Detection voltage DET VDET temperature Ta = 40°C to 85°C 0.9 V  VDET  1.2 V  120 370 ppm/°C 1 Ta  VDET *3 coefficient 1.2 V  VDET  4.6 V  100 350 ppm/°C 1 *1. VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage range in Table 2.) *2. VDS: Drain-to-source voltage of the output transistor *3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.   VDET   VDET [mV/°C]*1 = VDET(S) (typ.)[V]*2  Ta  V [ppm/°C]*3  1000 Ta DET *1. Temperature change of the detection voltage *2. Set detection voltage *3. Detection voltage temperature coefficient Leakage current 8 ILEAK 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 2. CMOS output product Table 9 Item Symbol Condition 0.8 V  VDET  2.4 V Detection voltage*1 VDET 2.4 V  VDET  4.6 V Hysteresis width  VHYS Current consumption ISS Operation voltage VDD VDD = VDET  0.6 V  Output transistor Nch VDS*2 = 0.5 V Output current IOUT Output transistor Pch VDS*2 = 0.5 V Delay time Detection voltage temperature coefficient*3 *1. *2. *3. tD 0.8 V  VDET  1.2 V 1.2 V  VDET  2.3 V 2.3 V  VDET  3.6 V 3.6 V  VDET  4.6 V VDD = 0.7 V S-1009C08 to 14 VDD = 1.2 V S-1009C15 to 46 VDD = 2.4 V S-1009C27 to 46 VDD = 4.8 V S-1009C08 to 39 VDD = 6.0 V S-1009C40 to 46 (Ta = 25°C unless otherwise specified) Test Min. Typ. Max. Unit Circuit VDET(S) VDET(S) V 1 VDET(S)  0.012  0.012 VDET(S) VDET(S) VDET(S) V 1  0.995  1.005 VDET VDET VDET V 1  0.04  0.05  0.06  0.30 0.90 A 2  0.27 0.90 A 2  0.42 0.90 A 2  0.39 0.90 A 2 0.6  10.0 V 1 0.14 0.40  mA 3 0.73 1.33  mA 3 1.47 2.39  mA 3 1.62 2.60  mA 5 1.78 2.86  mA 5 CD = 4.7 nF 22.1 26.0 29.9 ms 4  180 430 ppm/°C 1 0.8 V  VDET  0.9 V VDET  120 370 ppm/°C 1 Ta = 40°C to 85°C 0.9 V  VDET  1.2 V Ta  VDET 1.2 V  VDET  4.6 V  100 350 ppm/°C 1 VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage range in Table 3.) VDS: Drain-to-source voltage of the output transistor The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.   VDET   VDET [mV/°C]*1 = VDET(S) (typ.)[V]*2  Ta  V [ppm/°C]*3  1000 Ta DET *1. Temperature change of the detection voltage *2. Set detection voltage *3. Detection voltage temperature coefficient 9 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Test Circuits  VDD V  OUT VSS *1. R*1 100 k VDD VDD VDD OUT  CD V VSS CD R is unnecessary for CMOS output product. Figure 7 Test Circuit 1 Figure 8 VDD VDD OUT VSS CD A  VDS VSS V *1. Figure 9 Test Circuit 3 VDS V VDD  OUT V VSS Figure 11 CD Test Circuit 5  A Oscilloscope CD R is unnecessary for CMOS output product. Figure 10  VDD OUT P.G. Test Circuit 2 R*1 100 k VDD   V 10 A Test Circuit 4 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Timing Charts 1. Nch open-drain output product VDD Release voltage (VDET) Hysteresis width (VHYS) Detection voltage (VDET) Minimum operation voltage VSS R 100 k VDD CD OUT VSS VDD V  Output from OUT pin VSS tD Figure 12 2. CMOS output product VDD Release voltage (VDET) Hysteresis width (VHYS) Detection voltage (VDET) Minimum operation voltage VSS VDD CD OUT VSS V  VDD Output from OUT pin VSS tD Remark When VDD is the minimum operation voltage or less, the output voltage from the OUT pin is indefinite in the shaded area. Figure 13 11 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Operation 1. Basic operation: CMOS output (active "L") product (1) (2) (3) (4) (5) When the power supply voltage (VDD) is the release voltage (VDET) or more, the Nch transistor is OFF and the Pch transistor is ON to output VDD ("H"). Since the Nch transistor N1 in Figure 14 is OFF, the comparator (RB  RC )  VDD . input voltage is RA  RB  RC Although VDD decreases to VDET or less, VDD is output when VDD is the detection voltage (VDET) or more. When VDD decreases to VDET or less (point A in Figure 15), the Nch transistor is ON and the Pch transistor is OFF so that VSS is output. At this time, the Nch transistor N1 in Figure 14 is turned on, and the input RB  VDD . voltage to the comparator is RA  RB The output is indefinite by decreasing VDD to the IC’s minimum operation voltage or less. If the output is pulled up, it will be VDD. VSS is output by increasing VDD to the minimum operation voltage or more. Although VDD exceeds VDET and VDD is less than VDET, the output is VSS. When increasing VDD to VDET or more (point B in Figure 15), the Nch transistor is OFF and the Pch transistor is ON so that VDD is output. At this time, VDD is output from the OUT pin after the passage of the delay time (tD). VDD RA *1  Delay circuit  *1 Pch OUT RB *1 VREF Nch *1 RC N1 VSS CD CD *1. Parasiteic diode Figure 14 (1) (2) (3) Operation 1 (4) (5) VDD B Release voltage (VDET) A Hysteresis width Detection voltage (VDET) (VHYS) Minimum operation voltage VSS VDD Output from OUT pin VSS tD Figure 15 12 Operation 2 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 2. Delay circuit The delay circuit delays the output signal to the OUT pin from the time at which the power supply voltage (VDD) exceeds the release voltage (VDET) when VDD is turned on. The output signal is not delayed when VDD decreases to the detection voltage (VDET) or less (refer to "Figure 15 Operation 2"). The delay time (tD) is determined by the time constant of the built-in constant current (approx. 100 nA) and the attached delay capacitor (CD), or the delay time (tD0) when the CD pin is open, and calculated from the following equation. When the CD value is sufficiently large, the tD0 value can be disregarded. tD [ms] = Delay coefficient  CD [nF]  tD0 [ms] Operation Temperature Ta = 85°C Ta = 25°C Ta = 40°C Table 10 Delay Coefficient Min. 2.82 4.70 5.64 Delay Coefficient Typ. 4.20 5.47 8.40 Table 11 Operation Temperature Ta = 40°C to 85°C Caution 1. Max. 5.72 6.24 12.01 Delay Time Min. 0.01 ms Delay Time (tD0) Typ. 0.10 ms Max. 0.24 ms When the CD pin is open, a double pulse shown in Figure 16 may appear at release. To avoid the double pulse, attach 100 pF or larger capacitor to the CD pin. Do not apply voltage to the CD pin from the exterior. VOUT Time Figure 16 2. 3. Mounted board layout should be made in such a way that no current flows into or flows from the CD pin since the impedance of the CD pin is high, otherwise correct delay time cannot be provided. There is no limit for the capacitance of CD as long as the leakage current of the capacitor can be ignored against the built-in constant current value. Leakage current causes deviation in delay time. When the leakage current is larger than the built-in constant current, no release takes place. 13 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 3. Other characteristics 3. 1 Temperature characteristics of detection voltage The shaded area in Figure 17 shows the temperature characteristics of detection voltage in the operation temperature range. VDET [V] 0.945 mV/°C VDET25 *1 0.945 mV/°C 40 *1. Figure 17 3. 2 25 85 Ta [°C] VDET25 is an actual detection voltage value at Ta = 25°C. Temperature Characteristics of Detection Voltage (Example for VDET = 2.7 V) Temperature characteristics of release voltage The temperature change   VDET of the release voltage is calculated by using the temperature change Ta   VDET of the detection voltage as follows: Ta   VDET VDET   VDET =  Ta VDET Ta The temperature change of the release voltage and the detection voltage has the same sign consequently. 3. 3 Temperature characteristics of hysteresis voltage The temperature change of the hysteresis voltage is expressed as follows:   VDET   VDET VHYS   VDET  =  Ta Ta VDET Ta 14   VDET   VDET  and is calculated as Ta Ta 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Standard Circuit R*1 100 k VDD OUT CD CD *1. *2. *2 VSS R is unnecessary for CMOS output product. The delay capacitor (CD) should be connected directly to the CD pin and the VSS pin. Figure 18 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 15 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Explanation of Terms 1. Detection voltage (VDET) The detection voltage is a voltage at which the output in Figure 21 turns to "L". The detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (VDET min.) and the maximum (VDET max.) is called the detection voltage range (refer to Figure 19). Example: 2. In the S-1009C15, the detection voltage is either one in the range of 1.488 V  VDET  1.512 V. This means that some S-1009C15 have VDET = 1.488 V and some have VDET = 1.512 V. Release voltage (VDET) The release voltage is a voltage at which the output in Figure 21 turns to "H". The release voltage varies slightly among products of the same specification. The variation of release voltages between the specified minimum (VDET min.) and the maximum (VDET max.) is called the release voltage range (refer to Figure 20). The range is calculated from the actual detection voltage (VDET) of a product and is in the range of VDET  1.04  VDET  VDET  1.06. Example: For the S-1009C15, the release voltage is either one in the range of 1.548 V  VDET  1.602 V. This means that some S-1009C15 have VDET = 1.548 V and some have VDET = 1.602 V. VDD VDD Release voltage Detection voltage VDET max. VDET max. Detection voltage range VDET min. Release voltage range VDET min. OUT OUT Delay time Figure 19 Detection Voltage Figure 20 Release Voltage R*1 VDD  VDD V VSS OUT CD CD *1. Figure 21 16 100 k V  R is unnecessary for CMOS output product. Test Circuit of Detection Voltage and Release Voltage 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 3. Hysteresis width (VHYS) The hysteresis width is the voltage difference between the detection voltage and the release voltage (the voltage at point B  the voltage at point A = VHYS in "Figure 15 Operation 2"). Setting the hysteresis width between the detection voltage and the release voltage, prevents malfunction caused by noise on the input voltage. 4. Delay time (tD) The delay time in the S-1009 Series is a period from the input voltage to the VDD pin exceeding the release voltage (VDET) until the output from the OUT pin inverts. The delay time changes according to the delay capacitor (CD). VDD VDET OUT tD Figure 22 5. Delay Time Feed-through current Feed-through current is a current that flows instantaneously at the time of detection and release of a voltage detector. The feed-through current is large in CMOS output product, small in Nch open-drain output product. 6. Oscillation In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active "L" product for example, the feed-through current which is generated when the output goes from "L" to "H" (release) causes a voltage drop equal to [feed-through current]  [input resistance] across the resistor. When the input voltage drops below the detection voltage (VDET) as a result, the output voltage goes to low level. In this state, the feed-through current stops and its resultant voltage drop disappears, and the output goes from "L" to "H". The feed-through current is then generated again, a voltage drop appears, and repeating the process finally induces oscillation. VDD RA VIN S-1009C OUT RB VSS Figure 23 Example for Bad Implementation Due to Detection Voltage Change 17 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Precautions  Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.  In CMOS output product of the S-1009 Series, the feed-through current flows at the detection and the release. If the input impedance is high, oscillation may occur due to the voltage drop by the feed-through current during releasing.  In CMOS output product oscillation may occur when a pull-down resistor is used, and falling speed of the power supply voltage (VDD) is slow near the detection voltage.  When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics of the external parts should be taken into consideration. ABLIC Inc. shall not bear any responsibility for patent infringements related to products using the circuits described herein.  ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 18 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Characteristics (Typical Data) 1. Detection voltage (VDET) vs. Temperature (Ta) S-1009N08 0.90 S-1009N11 1.20 +VDET 0.80 −VDET 0.75 0.70 −40 −25 25 Ta [°C] 50 75 85 VDET [V] VDET [V] 1.20 −VDET 25 Ta [°C] 50 75 85 +VDET 4.60 −VDET 4.40 −40 −25 4.20 0 25 Ta [°C] 50 75 85 −40 −25 0 25 Ta [°C] 50 75 85 0 25 Ta [°C] 50 75 85 0 25 Ta [°C] 50 75 85 Hysteresis width (VHYS) vs. Temperature (Ta) S-1009N08 8 S-1009N11 8 7 VHYS [%] 7 VHYS [%] 0 4.80 +VDET 1.10 6 5 4 3 −40 −25 5 3 0 25 Ta [°C] 50 75 85 −40 −25 S-1009N46 8 7 VHYS [%] 7 6 5 4 3 6 4 S-1009N12 8 VHYS [%] −40 −25 S-1009N46 5.00 1.30 2. −VDET 1.05 S-1009N12 1.40 1.00 1.10 1.00 0 +VDET 1.15 VDET [V] VDET [V] 0.85 6 5 4 −40 −25 3 0 25 Ta [°C] 50 75 85 −40 −25 19 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 3. Current consumption (ISS) vs. Input voltage (VDD) Ta = 25°C S-1009C08 1.50 0.75 1.00 ISS [μA] ISS [μA] 1.25 0.75 0.50 0 0 0 2 4 6 VDD [V] 8 10 Ta = 25°C S-1009C12 1.0 0 ISS [μA] ISS [μA] 0.50 8 10 Ta = 25°C 0.50 0.25 0 0 0 2 8 4 6 VDD [V] 0 10 2 8 4 6 VDD [V] 10 Current consumption (ISS) vs. Temperature (Ta) VDD = VDET  0.6 V S-1009N08 1.00 ISS [μA] 0.75 0.50 0.25 0 0.50 0.25 −40 −25 0 0 25 Ta [°C] 50 75 85 VDD = VDET  0.6 V S-1009N12 1.00 −40 −25 0 25 Ta [°C] 50 75 85 VDD = VDET  0.6 V S-1009N46 1.00 0.75 ISS [μA] 0.75 0.50 0.25 0 VDD = VDET  0.6 V S-1009N11 1.00 0.75 ISS [μA] 4 6 VDD [V] 0.75 0.25 ISS [μA] 2 S-1009C46 1.0 0.75 20 0.50 0.25 0.25 4. Ta = 25°C S-1009C11 1.00 0.50 0.25 −40 −25 0 0 25 Ta [°C] 50 75 85 −40 −25 0 25 Ta [°C] 50 75 85 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series Nch transistor output current (IOUT) vs. VDS Ta = 25°C S-1009N46 15.0 VDD = 3.6 V 10.0 2.4 V 7.5 5.0 1.2 V 1.0 V 2.5 0 0 7. IOUT [mA] Ta = −40°C 3.0 +25°C +85°C 1.0 0 0 1.0 2.0 VDD = 8.4 V 30.0 7.2 V 6.0 V 20.0 4.8 V 3.6 V 2.4 V 1.2 V 10.0 3.0 4.0 VDD [V] 0 8. VDS = 0.5 V 2.0 Ta = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS [V] Nch transistor output current (IOUT) vs. Input voltage (VDD) S-1009N46 4.0 Pch transistor output current (IOUT) vs. VDS S-1009C08 40.0 IOUT [mA] IOUT [mA] 12.5 6. 2.0 5.0 6.0 4.0 6.0 VDS [V] 8.0 10.0 Pch transistor output current (IOUT) vs. Input voltage (VDD) S-1009C08 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 VDS = 0.5 V Ta = −40°C IOUT [mA] 5. +25°C +85°C 2 4 6 VDD [V] 8 10 Remark VDS: Drain-to-source voltage of the output transistor 21 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 9. Minimum operation voltage (VOUT) vs. Input voltage (VDD) S-1009N08 Pull-up to VDD Pull-up resistance: 100 k S-1009N11 1.2 0.8 0.6 VOUT [V] VOUT [V] 1.0 Ta = −40°C 0.4 +25°C 0.2 +85°C 0 0 0.2 0.4 0.6 VDD [V] S-1009N12 0.8 0.4 0.6 0.8 VDD [V] 1.0 1.2 Pull-up to VDD Pull-up resistance: 100 k 5.0 0.8 VOUT [V] VOUT [V] 0.2 6.0 Ta = −40°C +25°C 0.4 0 0.2 0.4 S-1009N08 4.0 3.0 Ta = −40°C 2.0 +25°C 1.0 +85°C 0 +85°C 0 0.6 0.8 VDD [V] 1.0 1.2 1.4 Pull-up to 10 V Pull-up resistance: 100 k 0 1.0 S-1009N11 12.0 2.0 3.0 VDD [V] 4.0 5.0 Pull-up to 10 V Pull-up resistance: 100 k 12.0 10.0 Ta = −40°C 10.0 8.0 +25°C 8.0 6.0 +85°C VOUT [V] VOUT [V] +25°C +85°C S-1009N46 1.2 4.0 2.0 Ta = −40°C +25°C 6.0 +85°C 4.0 2.0 0 0 0 0.2 0.4 0.6 VDD [V] S-1009N12 0.8 1.0 Pull-up to 10 V Pull-up resistance: 100 k 0 0.2 S-1009N46 12.0 6.0 +25°C 4.0 +85°C VOUT [V] 8.0 2.0 0.6 0.8 VDD [V] 1.0 1.2 Ta = −40°C 10.0 Ta = −40°C 0.4 Pull-up to 10 V Pull-up resistance: 100 k 12.0 10.0 VOUT [V] Ta = −40°C 0 1.6 +25°C 8.0 +85°C 6.0 4.0 2.0 0 0 0 22 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 Pull-up to VDD Pull-up resistance: 100 k Pull-up to VDD Pull-up resistance: 100 k 0.2 0.4 0.6 0.8 VDD [V] 1.0 1.2 1.4 0 1.0 2.0 3.0 VDD [V] 4.0 5.0 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 10. Dynamic response vs. Output pin capacitance (COUT) (CD pin; open) S-1009N08 10 Response time [ms] Response time [ms] S-1009C08 1 tPLH 0.1 tPHL 0.01 0.001 0.00001 0.001 0.01 0.0001 Output pin capacitance [μF] 0.1 tPLH 0.1 tPHL 0.01 0.001 0.00001 0.001 0.01 0.0001 Output pin capacitance [μF] 0.1 Response time [ms] Response time [ms] tPLH 0.1 tPHL 0.01 0.001 0.01 0.0001 Output pin capacitance [μF] 0.1 Response time [ms] Response time [ms] tPLH 0.1 0.001 0.00001 0.001 0.00001 0.001 0.01 0.0001 Output pin capacitance [μF] 0.1 tPLH 1 0.1 tPHL 0.01 0.001 0.00001 0.001 0.01 0.0001 Output pin capacitance [μF] 0.1 1 tPLH 0.1 tPHL 0.01 0.001 0.00001 0.001 0.01 0.0001 Output pin capacitance [μF] 0.1 S-1009N46 10 S-1009C46 1 0.01 tPHL 0.01 S-1009N12 10 S-1009C12 1 0.001 0.00001 0.1 S-1009N11 10 Response time [ms] Response time [ms] S-1009C11 1 tPLH 1 tPHL 0.001 0.01 0.0001 Output pin capacitance [μF] 0.1 1 tPLH 0.1 0.01 0.001 0.00001 tPHL 0.001 0.01 0.0001 Output pin capacitance [μF] 0.1 23 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 1 s 1 s VIH*1 Input voltage VIL*2 R tPHL VDD tPLH V *3 VDD  90% *3 VDD VDD  VSS OUT CD *1 100 k COUT Output voltage V  VDD1 *1 *3 VDD  10% *1. *1. *2. *3. VIH = 10 V VIL = 0.7 V CMOS output product: VDD Nch open-drain product: VDD1 Figure 24 Caution Test Condition of Response Time R and VDD1 are unnecessary for CMOS output product. Figure 25 Test Circuit of Response Time 1. The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 2. When the CD pin is open, a double pulse may appear at release. To avoid the double pulse, attach 100 pF or more capacitor to the CD pin. Response time when detecting (tPHL) is not affected by CD pin capacitance. Besides, response time when releasing (tPLH) can be set the delay time by attaching the CD pin. Refer to "11. Delay time (tD) vs. CD pin capacitance (CD) (without output pin capacitance)" for details. 11. Delay time (tD) vs. CD pin capacitance (CD) (without output pin capacitance) Ta = 25°C 1000 1000 100 100 10 1 0.1 0.1 1 10 CD [nF] 100 0.1 1000 Ta = 25°C S-1009N12 10000 1000 1000 100 100 10 1 1 10 CD [nF] 100 1000 Ta = 25°C S-1009N46 10000 tD [ms] tD [ms] 10 1 0.1 10 1 0.1 0.1 0.1 24 Ta = 25°C S-1009N11 10000 tD [ms] tD [ms] S-1009N08 10000 1 10 CD [nF] 100 1000 0.1 1 10 CD [nF] 100 1000 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 12. Delay time (tD) vs. Temperature (Ta) CD = 4.7 nF S-1009N11 50 40 40 30 30 tD [ms] tD [ms] S-1009N08 50 20 10 0 −40 −25 0 0 25 Ta [°C] 50 75 85 CD = 4.7 nF 40 40 30 30 20 10 −40 −25 0 25 Ta [°C] S-1009N46 50 tD [ms] tD [ms] 20 10 S-1009N12 50 0 CD = 4.7 nF 50 75 85 CD = 4.7 nF 20 10 −40 −25 0 0 25 Ta [°C] 50 75 85 −40 −25 0 25 Ta [°C] 50 75 85 1 s VIH *1 R*1 VDD Input voltage VIL*2 tD  VDD V VSS OUT CD CD VDD  90% 100 k V  Output voltage *1. VSS *1. *2. R is unnecessary for CMOS output product. VIH = 10 V VIL = 0.7 V Figure 26 Caution Test Condition for Delay Time Figure 27 Test Circuit for Delay Time The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 25 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Application Circuit Examples 1. Microcomputer reset circuits In microcomputers, when the power supply voltage is lower than the guaranteed operation voltage, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to the normal level, the microcomputer needs to be initialized. Otherwise, the microcomputer may malfunction after that. Reset circuits to protect microcomputer in the event of current being momentarily switched off or lowered. Using the S-1009 Series which has the low operation voltage, a high accuracy detection voltage and hysteresis, reset circuits can be easily constructed as seen in Figure 28 and Figure 29. VDD1 VDD2 VDD S-1009C S-1009N Microcomputer Microcomputer VSS VSS Figure 28 Example of Reset Circuit (CMOS Output Product) Caution 26 Figure 29 Example of Reset Circuit (Nch Open-drain Output Product) The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 2. Power-on reset circuit (Nch open-drain output product only) A power-on reset circuit can be constructed using the S-1009N Series. VDD RA *1 (RA  100 k) R *2 Di 100 k VIN S-1009N OUT (Nch open-drain output product) C VSS *1. *2. RA should be 100 k or less to prevent oscillation. Diode (Di) instantaneously discharges the charge stored in the capacitor (C) at the power falling. Di can be removed when the delay of the falling time is not important. Figure 30 VDD [V] OUT [V] t [s] t [s] Figure 31 Remark When the power rises sharply, the output may instantaneously be set to the "H" level due to the IC’s indefinite area (the output voltage is indefinite when it is the IC’s minimum operation voltage or less), as seen in Figure 32. VDD [V] OUT [V] t [s] t [s] Figure 32 Caution 1. 2. The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. Note that the hysteresis width may be larger as the following equation shows when using the above connection. Perform thorough evaluation using the actual application to set the constant. Maximum hysteresis width = VHYS RA  20 A 27 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 3. Change of detection voltage (Nch open-drain output product only) If there is not a product with a specified detection voltage value in the S-1009N Series, the detection voltage can be changed by using a resistance divider or a diode, as seen in Figure 33 and Figure 34. In Figure 33, hysteresis width also changes. VDD VDD RA (RA  100 k) VIN VIN OUT S-1009N S-1009N OUT (Nch open-drain output product) (Nch open-drain ouput product) VSS VSS RA  RB  VDET RB RA  RB Hysteresis width =  VHYS RB Detection voltage = Detection voltage = Vf1  (VDET) RA should be 100 k or less to prevent oscillation. Caution If RA and RB are large, the hysteresis width may also be larger than the value given by the above equation due to the feed-through current. Figure 33 Caution 1. 2. Figure 34 The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. Note that the hysteresis width may be larger as the following equation shows when using the above connections. Perform thorough evaluation using the actual application to set the constant. Maximum hysteresis width = 28 100 k 100 k RB *1. R Vf1 R *1 R A  RB  VHYSRA  20 A RB 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series  Marking Specifications 1. SOT-23-5 Top view 5 4 (1) to (3): (4): Product code (refer to Product name vs. Product code) Lot number (1) (2) (3) (4) 1 2 3 Product name vs. Product code 1. 1 Nch open-drain output product Product Code Product Name (1) (2) (3) S-1009N08I-M5T1U T 8 A S-1009N09I-M5T1U T 8 B S-1009N10I-M5T1U T 8 C S-1009N11I-M5T1U T 8 D S-1009N12I-M5T1U T 8 E S-1009N13I-M5T1U T 8 F S-1009N14I-M5T1U T 8 G S-1009N15I-M5T1U T 8 H S-1009N16I-M5T1U T 8 I S-1009N17I-M5T1U T 8 J S-1009N18I-M5T1U T 8 K S-1009N19I-M5T1U T 8 L S-1009N20I-M5T1U T 8 M S-1009N21I-M5T1U T 8 N S-1009N22I-M5T1U T 8 O S-1009N23I-M5T1U T 8 P S-1009N24I-M5T1U T 8 Q S-1009N25I-M5T1U T 8 R S-1009N26I-M5T1U T 8 S S-1009N27I-M5T1U T 8 T S-1009N28I-M5T1U T 8 U S-1009N29I-M5T1U T 8 V S-1009N30I-M5T1U T 8 W S-1009N31I-M5T1U T 8 X S-1009N32I-M5T1U T 8 Y S-1009N33I-M5T1U T 8 Z S-1009N34I-M5T1U T 9 A S-1009N35I-M5T1U T 9 B S-1009N36I-M5T1U T 9 C S-1009N37I-M5T1U T 9 D S-1009N38I-M5T1U T 9 E S-1009N39I-M5T1U T 9 F S-1009N40I-M5T1U T 9 G S-1009N41I-M5T1U T 9 H S-1009N42I-M5T1U T 9 I S-1009N43I-M5T1U T 9 J S-1009N44I-M5T1U T 9 K S-1009N45I-M5T1U T 9 L S-1009N46I-M5T1U T 9 M 1. 2 CMOS output product Product Name S-1009C08I-M5T1U S-1009C09I-M5T1U S-1009C10I-M5T1U S-1009C11I-M5T1U S-1009C12I-M5T1U S-1009C13I-M5T1U S-1009C14I-M5T1U S-1009C15I-M5T1U S-1009C16I-M5T1U S-1009C17I-M5T1U S-1009C18I-M5T1U S-1009C19I-M5T1U S-1009C20I-M5T1U S-1009C21I-M5T1U S-1009C22I-M5T1U S-1009C23I-M5T1U S-1009C24I-M5T1U S-1009C25I-M5T1U S-1009C26I-M5T1U S-1009C27I-M5T1U S-1009C28I-M5T1U S-1009C29I-M5T1U S-1009C30I-M5T1U S-1009C31I-M5T1U S-1009C32I-M5T1U S-1009C33I-M5T1U S-1009C34I-M5T1U S-1009C35I-M5T1U S-1009C36I-M5T1U S-1009C37I-M5T1U S-1009C38I-M5T1U S-1009C39I-M5T1U S-1009C40I-M5T1U S-1009C41I-M5T1U S-1009C42I-M5T1U S-1009C43I-M5T1U S-1009C44I-M5T1U S-1009C45I-M5T1U S-1009C46I-M5T1U Product Code (1) (2) (3) T 6 A T 6 B T 6 C T 6 D T 6 E T 6 F T 6 G T 6 H T 6 I T 6 J T 6 K T 6 L T 6 M T 6 N T 6 O T 6 P T 6 Q T 6 R T 6 S T 6 T T 6 U T 6 V T 6 W T 6 X T 6 Y T 6 Z T 7 A T 7 B T 7 C T 7 D T 7 E T 7 F T 7 G T 7 H T 7 I T 7 J T 7 K T 7 L T 7 M 29 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 2. SC-82AB Top view 4 3 (1) to (3): Product code (refer to Product name vs. Product code) (1) (2) (3) 1 2 Product name vs. Product code 2. 1 Nch open-drain output product Product Code Product Name (1) (2) (3) S-1009N08I-N4T1U T 8 A S-1009N09I-N4T1U T 8 B S-1009N10I-N4T1U T 8 C S-1009N11I-N4T1U T 8 D S-1009N12I-N4T1U T 8 E S-1009N13I-N4T1U T 8 F S-1009N14I-N4T1U T 8 G S-1009N15I-N4T1U T 8 H S-1009N16I-N4T1U T 8 I S-1009N17I-N4T1U T 8 J S-1009N18I-N4T1U T 8 K S-1009N19I-N4T1U T 8 L S-1009N20I-N4T1U T 8 M S-1009N21I-N4T1U T 8 N S-1009N22I-N4T1U T 8 O S-1009N23I-N4T1U T 8 P S-1009N24I-N4T1U T 8 Q S-1009N25I-N4T1U T 8 R S-1009N26I-N4T1U T 8 S S-1009N27I-N4T1U T 8 T S-1009N28I-N4T1U T 8 U S-1009N29I-N4T1U T 8 V S-1009N30I-N4T1U T 8 W S-1009N31I-N4T1U T 8 X S-1009N32I-N4T1U T 8 Y S-1009N33I-N4T1U T 8 Z S-1009N34I-N4T1U T 9 A S-1009N35I-N4T1U T 9 B S-1009N36I-N4T1U T 9 C S-1009N37I-N4T1U T 9 D S-1009N38I-N4T1U T 9 E S-1009N39I-N4T1U T 9 F S-1009N40I-N4T1U T 9 G S-1009N41I-N4T1U T 9 H S-1009N42I-N4T1U T 9 I S-1009N43I-N4T1U T 9 J S-1009N44I-N4T1U T 9 K S-1009N45I-N4T1U T 9 L S-1009N46I-N4T1U T 9 M 30 2. 2 CMOS output product Product Name S-1009C08I-N4T1U S-1009C09I-N4T1U S-1009C10I-N4T1U S-1009C11I-N4T1U S-1009C12I-N4T1U S-1009C13I-N4T1U S-1009C14I-N4T1U S-1009C15I-N4T1U S-1009C16I-N4T1U S-1009C17I-N4T1U S-1009C18I-N4T1U S-1009C19I-N4T1U S-1009C20I-N4T1U S-1009C21I-N4T1U S-1009C22I-N4T1U S-1009C23I-N4T1U S-1009C24I-N4T1U S-1009C25I-N4T1U S-1009C26I-N4T1U S-1009C27I-N4T1U S-1009C28I-N4T1U S-1009C29I-N4T1U S-1009C30I-N4T1U S-1009C31I-N4T1U S-1009C32I-N4T1U S-1009C33I-N4T1U S-1009C34I-N4T1U S-1009C35I-N4T1U S-1009C36I-N4T1U S-1009C37I-N4T1U S-1009C38I-N4T1U S-1009C39I-N4T1U S-1009C40I-N4T1U S-1009C41I-N4T1U S-1009C42I-N4T1U S-1009C43I-N4T1U S-1009C44I-N4T1U S-1009C45I-N4T1U S-1009C46I-N4T1U Product Code (1) (2) (3) T 6 A T 6 B T 6 C T 6 D T 6 E T 6 F T 6 G T 6 H T 6 I T 6 J T 6 K T 6 L T 6 M T 6 N T 6 O T 6 P T 6 Q T 6 R T 6 S T 6 T T 6 U T 6 V T 6 W T 6 X T 6 Y T 6 Z T 7 A T 7 B T 7 C T 7 D T 7 E T 7 F T 7 G T 7 H T 7 I T 7 J T 7 K T 7 L T 7 M 0.27 A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME SETTING) Rev.5.1_03 S-1009 Series 3. SNT-4A Top view 1 (1) to (3): Product code (refer to Product name vs. Product code) 4 (1) (2) (3) 2 3 Product name vs. Product code 3. 1 Nch open-drain output product Product Code Product Name (1) (2) (3) S-1009N08I-I4T1U T 8 A S-1009N09I-I4T1U T 8 B S-1009N10I-I4T1U T 8 C S-1009N11I-I4T1U T 8 D S-1009N12I-I4T1U T 8 E S-1009N13I-I4T1U T 8 F S-1009N14I-I4T1U T 8 G S-1009N15I-I4T1U T 8 H S-1009N16I-I4T1U T 8 I S-1009N17I-I4T1U T 8 J S-1009N18I-I4T1U T 8 K S-1009N19I-I4T1U T 8 L S-1009N20I-I4T1U T 8 M S-1009N21I-I4T1U T 8 N S-1009N22I-I4T1U T 8 O S-1009N23I-I4T1U T 8 P S-1009N24I-I4T1U T 8 Q S-1009N25I-I4T1U T 8 R S-1009N26I-I4T1U T 8 S S-1009N27I-I4T1U T 8 T S-1009N28I-I4T1U T 8 U S-1009N29I-I4T1U T 8 V S-1009N30I-I4T1U T 8 W S-1009N31I-I4T1U T 8 X S-1009N32I-I4T1U T 8 Y S-1009N33I-I4T1U T 8 Z S-1009N34I-I4T1U T 9 A S-1009N35I-I4T1U T 9 B S-1009N36I-I4T1U T 9 C S-1009N37I-I4T1U T 9 D S-1009N38I-I4T1U T 9 E S-1009N39I-I4T1U T 9 F S-1009N40I-I4T1U T 9 G S-1009N41I-I4T1U T 9 H S-1009N42I-I4T1U T 9 I S-1009N43I-I4T1U T 9 J S-1009N44I-I4T1U T 9 K S-1009N45I-I4T1U T 9 L S-1009N46I-I4T1U T 9 M 3. 2 CMOS output product Product Name S-1009C08I-I4T1U S-1009C09I-I4T1U S-1009C10I-I4T1U S-1009C11I-I4T1U S-1009C12I-I4T1U S-1009C13I-I4T1U S-1009C14I-I4T1U S-1009C15I-I4T1U S-1009C16I-I4T1U S-1009C17I-I4T1U S-1009C18I-I4T1U S-1009C19I-I4T1U S-1009C20I-I4T1U S-1009C21I-I4T1U S-1009C22I-I4T1U S-1009C23I-I4T1U S-1009C24I-I4T1U S-1009C25I-I4T1U S-1009C26I-I4T1U S-1009C27I-I4T1U S-1009C28I-I4T1U S-1009C29I-I4T1U S-1009C30I-I4T1U S-1009C31I-I4T1U S-1009C32I-I4T1U S-1009C33I-I4T1U S-1009C34I-I4T1U S-1009C35I-I4T1U S-1009C36I-I4T1U S-1009C37I-I4T1U S-1009C38I-I4T1U S-1009C39I-I4T1U S-1009C40I-I4T1U S-1009C41I-I4T1U S-1009C42I-I4T1U S-1009C43I-I4T1U S-1009C44I-I4T1U S-1009C45I-I4T1U S-1009C46I-I4T1U Product Code (1) (2) (3) T 6 A T 6 B T 6 C T 6 D T 6 E T 6 F T 6 G T 6 H T 6 I T 6 J T 6 K T 6 L T 6 M T 6 N T 6 O T 6 P T 6 Q T 6 R T 6 S T 6 T T 6 U T 6 V T 6 W T 6 X T 6 Y T 6 Z T 7 A T 7 B T 7 C T 7 D T 7 E T 7 F T 7 G T 7 H T 7 I T 7 J T 7 K T 7 L T 7 M 31 2.9±0.2 1.9±0.2 4 5 1 2 +0.1 0.16 -0.06 3 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.3 TITLE SOT235-A-PKG Dimensions No. MP005-A-P-SD-1.3 ANGLE UNIT mm ABLIC Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 +0.2 ø1.0 -0 2.0±0.05 0.25±0.1 4.0±0.1 1.4±0.2 3.2±0.2 3 2 1 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE SOT235-A-Carrier Tape No. MP005-A-C-SD-2.1 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. MP005-A-R-SD-1.1 SOT235-A-Reel TITLE No. MP005-A-R-SD-1.1 ANGLE QTY. UNIT mm ABLIC Inc. 3,000 2.0±0.2 1.3±0.2 4 3 0.05 0.3 +0.1 -0.05 +0.1 0.16 -0.06 2 1 +0.1 0.4 -0.05 No. NP004-A-P-SD-2.0 TITLE SC82AB-A-PKG Dimensions NP004-A-P-SD-2.0 No. ANGLE UNIT mm ABLIC Inc. +0.1 ø1.5 -0 4.0±0.1 2.0±0.05 1.1±0.1 4.0±0.1 0.2±0.05 ø1.05±0.1 (0.7) 2.2±0.2 2 1 3 4 Feed direction No. NP004-A-C-SD-3.0 TITLE SC82AB-A-Carrier Tape No. NP004-A-C-SD-3.0 ANGLE UNIT mm ABLIC Inc. 4.0±0.1 2.0±0.1 ø1.5 1.1±0.1 +0.1 -0 4.0±0.1 0.2±0.05 ø1.05±0.1 2.3±0.15 2 1 3 4 Feed direction No. NP004-A-C-S1-2.0 TITLE SC82AB-A-Carrier Tape No. NP004-A-C-S1-2.0 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. NP004-A-R-SD-1.1 TITLE SC82AB-A-Reel No. NP004-A-R-SD-1.1 QTY. ANGLE UNIT mm ABLIC Inc. 3,000 1.2±0.04 3 4 +0.05 0.08 -0.02 2 1 0.65 0.48±0.02 0.2±0.05 No. PF004-A-P-SD-6.0 TITLE SNT-4A-A-PKG Dimensions No. PF004-A-P-SD-6.0 ANGLE UNIT mm ABLIC Inc. +0.1 ø1.5 -0 4.0±0.1 2.0±0.05 0.25±0.05 +0.1 1.45±0.1 2 1 3 4 ø0.5 -0 4.0±0.1 0.65±0.05 Feed direction No. PF004-A-C-SD-2.0 TITLE SNT-4A-A-Carrier Tape No. PF004-A-C-SD-2.0 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. PF004-A-R-SD-1.0 TITLE SNT-4A-A-Reel No. PF004-A-R-SD-1.0 QTY. ANGLE UNIT mm ABLIC Inc. 5,000 0.52 1.16 2 0.52 0.35 1. 2. 0.3 1 (0.25 mm min. / 0.30 mm typ.) (1.10 mm ~ 1.20 mm) 0.03 mm 1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.). 2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm). Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package. 2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm or less from the land pattern surface. 3. Match the mask aperture size and aperture position with the land pattern. 4. Refer to "SNT Package User's Guide" for details. 1. 2. (0.25 mm min. / 0.30 mm typ.) (1.10 mm ~ 1.20 mm) TITLE SNT-4A-A -Land Recommendation PF004-A-L-SD-4.1 No. No. PF004-A-L-SD-4.1 ANGLE UNIT mm ABLIC Inc. Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described herein. 4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to the use of the products outside their specified ranges. 5. Before using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products are strictly prohibited from using, providing or exporting for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear, biological or chemical weapons or missiles, or use any other military purposes. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by ABLIC, Inc. Do not apply the products to the above listed devices and equipments. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of the products. 9. In general, semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system in which the products are used must be sufficiently evaluated and judged whether the products are allowed to apply for the system on customer's own responsibility. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express permission of ABLIC Inc. 14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales representative. 15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into the English language and the Chinese language, shall be controlling. 2.4-2019.07 www.ablic.com
S-1009C21I-I4T1U
物料型号:S-1009 Series

器件简介: S-1009系列是一款采用CMOS技术研制的超高精度电压检测器。其内部固定检测电压,精度为±0.5%,并且具有超低的工作电流消耗,典型值为270nA。该系列提供外部设置延迟时间的功能,延迟时间精度为±15%,并且提供Nch开漏和CMOS输出两种形式。

引脚分配: - SOT-23-5封装:1.OUT(电压检测输出引脚),2.VDD(输入电压引脚),3.VSS(GND引脚),4.NC(无连接引脚),5.CD(延迟电容连接引脚)。 - SC-82AB封装:1.VSS(GND引脚),2.VDD(输入电压引脚),3.CD(延迟电容连接引脚),4.OUT(电压检测输出引脚)。 - SNT-4A封装:1.VSS(GND引脚),2.OUT(电压检测输出引脚),3.CD(延迟电容连接引脚),4.VDD(输入电压引脚)。

参数特性: - 检测电压:0.8V至4.6V(0.1V步进) - 工作电压范围:0.6V至10.0V(CMOS输出产品) - 滞后宽度:5% ±1% - 延迟时间精度:±15%(CD=4.7nF) - 输出形式:Nch开漏输出(活跃“L”),CMOS输出(活跃“L”) - 工作温度范围:Ta = -40°C至+85°C

功能详解: S-1009系列具有超低功耗特性,适合于便携式设备。它还具有延迟功能,可以通过外部电容设置延迟时间,以适应不同的应用需求。

应用信息: - 用于CPU和微计算机的电源监控和复位 - 用于电视、DVD录像机和家用电器的恒压电源监控 - 用于便携设备(如笔记本电脑、数字相机、手机)的电源监控

封装信息: S-1009系列提供SOT-23-5、SC-82AB和SNT-4A三种封装类型,具体尺寸和封装细节在文档中有详细描述。
S-1009C21I-I4T1U 价格&库存

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S-1009C21I-I4T1U
  •  国内价格 香港价格
  • 5000+3.345545000+0.41502
  • 10000+3.2197510000+0.39941
  • 25000+3.1191425000+0.38693

库存:80

S-1009C21I-I4T1U
    •  国内价格 香港价格
    • 1+1.390421+0.17248
    • 10+1.3509210+0.16758
    • 50+1.3272250+0.16464
    • 100+1.30352100+0.16170
    • 500+1.29562500+0.16072
    • 1000+1.295621000+0.16072
    • 2000+1.287722000+0.15974
    • 4000+1.287724000+0.15974

    库存:50

    S-1009C21I-I4T1U
    •  国内价格 香港价格
    • 1+8.276941+1.02675
    • 10+7.4212410+0.92061
    • 25+7.0443225+0.87385

    库存:80