2N6487

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 75 WATTS • DC Current Gain Specified to 15 Amperes − • • • • hFE = 20 −150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 Vdc (Min) − 2N6487, 2N6490 = 80 Vdc (Min) − 2N6488, 2N6491 High Current Gain − Bandwidth Product fT = 5.0 MHz (Min) @ IC = 1.0 Adc TO−220AB Compact Package Pb−Free Packages are Available* MARKING DIAGRAM 4 MAXIMUM RATINGS (Note 1) Symbol Rating Collector−Emitter Voltage Collector−Base Voltage 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 Emitter−Base Voltage VCEO VCB Value TO−220AB CASE 221A STYLE 1 Unit Vdc 60 80 Vdc 70 90 1 2 2N64xxG AYWW 3 2N64xx xx G A Y WW = Specific Device Code = See Table on Page 5 = Pb−Free Package = Assembly Location = Year = Work Week VEB 5.0 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 5.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 75 0.6 W W/°C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.8 0.014 W W/°C ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 5 of this data sheet. Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.67 _C/W Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W THERMAL CHARACTERISTICS Characteristics Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 14 1 Publication Order Number: 2N6487/D PD, POWER DISSIPATION (WATTS) 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP) TA 4.0 TC 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max 60 80 − − 70 90 − − − − 1.0 1.0 − − − − 500 500 5.0 5.0 − 1.0 20 5.0 150 − − − 1.3 3.5 − − 1.3 3.5 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) 2N6487, 2N6490 2N6488, 2N6491 Collector−Emitter Sustaining Voltage (Note) (IC = 200 mAdc, VBE = 1.5 Vdc) 2N6487, 2N6490 2N6488, 2N6491 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N6487, 2N6490 2N6488, 2N6491 Collector Cutoff Current (VCE = 65 Vdc, VEB(off) = 1.5 Vdc) (VCE = 85 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) VCEX ICEO ICEX IEBO Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 15 Adc, IB = 5.0 Adc) VCE(sat) Base−Emitter On Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz) fT 5.0 − MHz Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 25 − − 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| • ftest http://onsemi.com 2 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP) VCC + 30 V 25 ms RC + 10 V SCOPE RB 0 - 10 V 51 tr, tf v 10 ns DUTY CYCLE = 1.0% D1 -4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. FOR PNP, REVERSE ALL POLARITIES. D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA Figure 2. Switching Time Test Circuit 1000 500 tr t, TIME (ns) 200 100 TC = 25°C VCC = 30 V IC/IB = 10 20 10 td @ VBE(off) [ 5.0 V NPN PNP 50 0.2 0.5 1.0 5.0 2.0 IC, COLLECTOR CURRENT (AMP) 10 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Turn−On Time 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZqJC (t) = r(t) RqJC RqJC = 1.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 4. Thermal Response http://onsemi.com 3 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP) There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown IC, COLLECTOR CURRENT (AMP) 20 10 100 ms 5.0 500 ms 1.0 ms 2.0 TJ = 150°C 1.0 0.5 CURVES APPLY BELOW RATED VCEO 2N6487, 2N6490 2N6488, 2N6491 0.2 0.1 5.0 ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C 2.0 dc 40 60 4.0 10 20 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active−Region Safe Operating Area 5000 1000 700 C, CAPACITANCE (pF) ts t, TIME (ns) 1000 500 tf NPN PNP 200 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 100 50 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) Cob 300 Cib 200 Cob 100 NPN PNP TJ = 25°C 70 10 50 20 0.5 1.0 Figure 6. Turn−Off Time 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 7. Capacitances NPN 2N6487, 2N6488 PNP 2N6490, 2N6491 500 500 TJ = 150°C 100 -55°C 50 20 VCE = 2.0 V 10 5.0 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) TJ = 150°C 200 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 25°C 100 -55°C 50 20 10 10 5.0 20 VCE = 2.0 V 0.2 Figure 8. DC Current Gain http://onsemi.com 4 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP) 2.0 TJ = 25°C 1.8 1.6 1.4 1.2 1.0 IC = 1.0 A 0.8 4.0 A 8.0 A 0.6 0.4 0.2 0 5.0 20 10 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 2.0 TJ = 25°C 1.8 1.6 1.4 1.2 IC = 1.0 A 1.0 4.0 A 8.0 A 0.8 0.6 0.4 0.2 0 5.0 20 10 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 Figure 9. Collector Saturation Region 2.8 2.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 1.6 1.2 VBE(sat) = IC/IB = 10 0.8 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 2.0 V 0.4 TJ = 25°C 2.4 TJ = 25°C 2.4 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 0.2 20 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages ORDERING INFORMATION Device Device Marking Package 2N6487 2N6487G TO−220AB 2N6487 TO−220AB (Pb−Free) 2N6488 2N6488G TO−220AB (Pb−Free) 50 Units / Rail TO−220AB 2N6490 TO−220AB (Pb−Free) 2N6491 2N6491G 50 Units / Rail TO−220AB 2N6488 2N6490 2N6490G Shipping 50 Units / Rail TO−220AB 2N6491 TO−220AB (Pb−Free) http://onsemi.com 5 50 Units / Rail 10 20 2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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