TIP111

TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use Equivalent Circuit C B TO-220 1 1.Base 2.Collector R1 3.Emitter R1 @ 10k W R2 @ 0.6kW Absolute Maximum Ratings* Symbol VCBO R2 E T a = 25°C unless otherwise noted Collector-Base Voltage Parameter : TIP110 : TIP111 : TIP112 Ratings 60 80 100 Units V V V 60 80 100 V V V VCEO Collector-Emitter Voltage : TIP110 : TIP111 : TIP112 VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP Collector Current (Pulse) 4 A IB Base Current (DC) 50 mA PC Collector Dissipation (Ta=25°C) 2 W Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 www.fairchildsemi.com 1 TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor November 2008 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP110 : TIP111 : TIP112 Test Condition ICEO Collector Cut-off Current ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE DC Current Gain VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage Cob Output Capacitance IC = 30mA, IB = 0 Min. Typ. Max. 60 80 100 Units V V V : TIP110 : TIP111 : TIP112 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 mA mA mA : TIP110 : TIP111 : TIP112 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 1 1 1 mA mA mA 2 mA IC = 2A, IB = 8mA 2.5 V VCE = 4V, IC = 2A 2.8 V VCB = 10V, IE = 0, f = 0.1MHz 100 pF 1000 500 * Pulse Test: Pulse Width£300ms, Duty Cycle£2% © 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 www.fairchildsemi.com 2 TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor Electrical Characteristics* Ta=25°C unless otherwise noted IB = 500mA 1.8 IB = 450mA 1.6 IB = 400mA I B= mA 350 10000 mA VCE = 4V 00 IB = 3 mA IB = 250 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.0 1.4 1.2 IB = 200mA 1.0 0.8 0.6 IB = 150mA 0.4 1000 100 0.2 0.0 0 1 2 3 4 10 0.01 5 0.1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 100 1000 I C = 500 IB f = 0.1 MHz Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 10 VBE(sat) 1 VCE (sat) 0.1 0.01 0.1 1 100 10 1 0.01 10 0.1 1 10 100 V CB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 80 10 PC[W], POWER DISSIPATION 1mS 5mS IC[A], COLLECTOR CURRENT 70 DC 1 0.1 TIP 110 TIP 111 TIP 112 1 10 50 40 30 20 10 0 100 VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 60 www.fairchildsemi.com 3 TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor Typical Characteristics TIP110/TIP111/TIP112 — NPN Epitaxial Silicon Darlington Transistor Mechanical Dimensions TO220 © 2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 www.fairchildsemi.com 4 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. A1 www.fairchildsemi.com 5 TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor TRADEMARKS