C3M0060065K

C3M0060065K VDS 650 V ID @ 25˚C Silicon Carbide Power MOSFET TM C3M MOSFET Technology 37 A RDS(on) 60 mΩ N-Channel Enhancement Mode Features • • • • • Package Benefits • • • • • • TAB Drain 3rd Generation SiC MOSFET technology High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) Drain (Pin 1, TAB) 1 D 2 3 4 S S G Gate (Pin 4) Driver Source (Pin 3) Applications • • • • • EV charging Server power supplies Solar PV inverters UPS DC/DC converters Power Source (Pin 2) Part Number Package Marking C3M0060065K TO-247-4 C3M0060065K Maximum Ratings Symbol VDSS Drain - Source Voltage, TC = 25 ˚C VGS Gate - Source voltage (Under transient events < 100 ns) ID ID(pulse) PD TJ , Tstg 1 Parameter Value Unit 650 V -8/+19 V Fig. 29 A Fig. 19 Continuous Drain Current, VGS = 15 V, TC = 25˚C 37 Continuous Drain Current, VGS = 15 V, TC = 100˚C 27 Pulsed Drain Current, Pulse width tP limited by Tjmax 99 A Power Dissipation, TC=25˚C, TJ = 175 ˚C 150 W -40 to +175 ˚C Operating Junction and Storage Temperature TL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ˚C Md Mounting Torque, (M3 or 6-32 screw) 1 8.8 Nm lbf-in C3M0060065K Rev. 3, 07-2020 Note Fig. 20 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS Parameter Drain-Source Breakdown Voltage Min. Typ. Max. 650 Unit V VGSon Gate-Source Recommended Turn-On Voltage 15 V VGSoff Gate-Source Recommended Turn-Off Voltage -4 V VGS(th) Gate Threshold Voltage 1.8 2.3 3.6 1.9 Test Conditions VGS = 0 V, ID = 100 μA Static V VDS = VGS, ID = 5 mA V VDS = VGS, ID = 5 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 650 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 60 79 RDS(on) Drain-Source On-State Resistance 42 80 10 gfs Transconductance Ciss Input Capacitance Coss Output Capacitance 80 Crss Reverse Transfer Capacitance 9 Co(er) Effective Output Capacitance (Energy Related) 95 Co(tr) Effective Output Capacitance (Time Related) 132 Eoss Coss Stored Energy 15 EON Turn-On Switching Energy (Body Diode) 70 9 Turn Off Switching Energy (Body Diode) 5 EON Turn-On Switching Energy (External SiC Diode) 67 EOFF Turn Off Switching Energy (External SiC Diode) 6 td(on) Turn-On Delay Time 8 Rise Time 11 Turn-Off Delay Time 17 Fall Time 5 td(off) tf RG(int) S 1020 EOFF tr mΩ Internal Gate Resistance 3 Qgs Gate to Source Charge 13 Qgd Gate to Drain Charge 17 Qg Total Gate Charge 46 VGS = 15 V, ID = 13.2 A VGS = 15 V, ID = 13.2 A, TJ = 175ºC VDS= 20 V, IDS= 13.2 A VDS= 20 V, IDS= 13.2 A, TJ = 175ºC VGS = 0 V, VDS = 600 V pF f = 1 MHz C3M0060065K Rev. 3, 07-2020 Fig. 29 Fig. 11 Fig. 4, 5,6 Fig. 7 Fig. 17, 18 VAC = 25 mV pF VGS = 0 V, VDS = 0V to 400 V Note 1 μJ VDS = 600 V, 1 MHz Fig. 16 μJ VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC Fig. 25 FWD = Internal Body Diode of MOSFET μJ VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A, RG(ext) = 2.5Ω, L= 135 μH, TJ = 175ºC Fig. 25 FWD = External SiC Diode ns VDD = 400 V, VGS = -4 V/15 V ID = 13.2 A, RG(ext) = 2.5 Ω, L= 135 μH Timing relative to VDS Inductive load Ω f = 1 MHz, VAC = 25 mV nC VDS = 400 V, VGS = -4 V/15 V ID = 13.2 A Per IEC60747-8-4 pg 21 Note (1): Co(er), a lumped capacitance that gives same stored energy as Coss while Vds is rising from 0 to 400V Co(tr), a lumped capacitance that gives same charging time as Coss while Vds is rising from 0 to 400V 2 Note Fig. 26 Fig. 12 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Typ. Diode Forward Voltage Max. Unit Test Conditions 5.1 V VGS = -4 V, ISD = 6.6 A, TJ = 25 °C 4.8 V VGS = -4 V, ISD = 6.6 A, TJ = 175 °C Continuous Diode Forward Current 23 A VGS = -4 V, TC = 25˚C Diode pulse Current 99 A VGS = -4 V, pulse width tP limited by Tjmax trr Reverse Recover time 11 ns Qrr Reverse Recovery Charge 151 nC Irrm Peak Reverse Recovery Current 27 A trr Reverse Recover time 16 ns Qrr Reverse Recovery Charge 110 nC Irrm Peak Reverse Recovery Current 12 A Note Fig. 8, 9, 10 VGS = -4 V, ISD = 13.2 A, VR = 400 V dif/dt = 4500 A/µs, TJ = 175 °C VGS = -4 V, ISD = 13.2 A, VR = 400 V dif/dt = 2400 A/µs, TJ = 175 °C Thermal Characteristics Symbol 3 Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.99 RθJA Thermal Resistance From Junction to Ambient C3M0060065K Rev. 3, 07-2020 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance Conditions: Tj = -40 °C tp = < 200 µs Drain-Source Current, IDS (A) 80 100 VGS = 15V 80 VGS = 11V 60 40 VGS = 9V 20 VGS = 15V Conditions: Tj = 25 °C tp = < 200 µs VGS = 13V Drain-Source Current, IDS (A) 100 VGS = 13V VGS = 11V 60 VGS = 9V 40 20 VGS = 7V VGS = 7V 0 0.0 2.0 4.0 6.0 8.0 10.0 0 12.0 0.0 2.0 4.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -40 ºC 100 VGS = 15V 10.0 12.0 VGS = 11V 60 Conditions: IDS = 13.2 A VGS = 15 V tp < 200 µs 1.6 VGS = 13V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 80 8.0 Figure 2. Output Characteristics TJ = 25 ºC 1.8 Conditions: Tj = 175 °C tp = < 200 µs 6.0 Drain-Source Voltage, VDS (V) VGS = 9V 40 VGS = 7V 20 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 -50 -25 0 Drain-Source Voltage, VDS (V) 140 Conditions: VGS = 15 V tp < 200 µs 100 Tvj = 175 °C 80 Tvj = -40 °C 60 Tvj = 25 °C 40 20 0 10 20 30 40 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 4 C3M0060065K Rev. 3, 07-2020 50 100 125 150 175 100 60 VGS = 11 V 80 VGS = 13 V 60 VGS = 15 V 40 20 0 0 75 Conditions: IDS = 13.2 A tp < 200 µs 120 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 120 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 175 ºC 140 25 Junction Temperature, Tj (°C) -50 -25 0 25 50 75 100 Junction Temperature, Tj (°C) 125 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 175 Typical Performance 60 40 TJ = 25 °C 30 TJ = 175 °C TJ = -40 °C 20 -8 -6 -2 -4 0 -10 VGS = 0 V -15 VGS = -2 V -20 -25 -30 10 0 2 3 4 5 6 7 8 9 10 Gate-Source Voltage, VGS (V) 11 Conditions: Tj = -40°C tp < 200 µs 12 -8 -6 -4 -2 0 0 -5 VGS = -4 V Drain-Source Current, IDS (A) -40 Figure 8. Body Diode Characteristic at -40 ºC -10 VGS = 0 V -15 VGS = -2 V -20 -25 -10 -8 -6 Drain-Source Current, IDS (A) -10 -35 Drain-Source Voltage VDS (V) Figure 7. Transfer Characteristic for Various Junction Temperatures -4 -2 0 Conditions: Tj = 25°C tp < 200 µs Drain-Source Voltage VDS (V) -10 VGS = 0 V -15 -20 VGS = -2 V -25 -30 Conditions: Tj = 175°C tp < 200 µs -35 -40 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 ºC Conditons VGS = VDS IDS = 5mA 3.5 -35 -40 Figure 10. Body Diode Characteristic at 175 ºC 16 4.0 0 -5 VGS = -4 V -30 Conditions: IDS = 13.2 A IGS = 50 mA VDS = 400 V Tj = 25 °C 12 Gate-Source Voltage, VGS (V) 3.0 Threshold Voltage, Vth (V) 0 -5 VGS = -4 V Drain-Source Current, IDS (A) 50 Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 µs 2.5 2.0 1.5 1.0 8 4 0 0.5 0.0 -50 -25 0 25 50 75 100 Junction Temperature TJ (°C) 125 Figure 11. Threshold Voltage vs. Temperature 5 C3M0060065K Rev. 3, 07-2020 150 175 -4 0 5 10 15 20 25 30 35 40 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 45 50 Typical Performance -6 -5 -4 -3 -2 -1 0 -8 VGS = 5 V Conditions: Tj = -40 °C tp < 200 µs -6 -5 -4 -3 -2 -1 -25 -15 18 -20 -25 16 14 12 10 8 6 4 2 -35 0 -40 0 100 Capacitance (pF) Crss 50 100 150 Drain-Source Voltage, VDS (V) Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 6 C3M0060065K Rev. 3, 07-2020 500 600 700 200 Conditions: Tj = 25 °C VAC = 25 mV f = 1 MHz Coss 100 1 0 400 Ciss 1000 Crss 10 10 1 300 Drain to Source Voltage, VDS (V) 10000 Conditions: Tj = 25 °C VAC = 25 mV f = 1 MHz Coss 100 200 Figure 16. Output Capacitor Stored Energy Capacitance (pF) Ciss 1000 -40 20 Figure 15. 3rd Quadrant Characteristic at 175 ºC 10000 -35 Drain-Source Voltage VDS (V) Stored Energy, EOSS (µJ) Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) -25 VGS = 15 V Conditions: Tj = 25 °C tp < 200 µs -30 Conditions: Tj = 175 °C tp < 200 µs -20 VGS = 10 V -30 0 -15 VGS = 15 V -10 Figure 14. 3rd Quadrant Characteristic at 25 ºC -10 VGS = 10 V 0 -30 -5 VGS = 5 V -1 VGS = 5 V -40 0 VGS = 0 V -2 VGS = 0 V Figure 13. 3rd Quadrant Characteristic at -40 ºC -7 -3 -35 Drain-Source Voltage VDS (V) -8 -4 -5 -20 VGS = 15 V -5 -5 -15 VGS = 10 V -6 0 -10 VGS = 0 V -7 0 Drain-Source Current, IDS (A) -7 Drain-Source Current, IDS (A) -8 0 100 200 300 400 Drain-Source Voltage, VDS (V) 500 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 650V) 600 Typical Performance 160 Conditions: Tj ≤ 175 °C 35 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 40 30 25 20 15 10 5 0 -55 -30 -5 20 45 70 95 Case Temperature, TC (°C) 120 145 120 100 80 60 40 20 0 170 Conditions: TJ ≤ 175 °C 140 -50 0.3 0.1 100E-3 0.05 100 125 150 175 0.02 1 µs 10 µs 100 µs 1.00 1 ms 100 ms 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp 0.01 SinglePulse 1E-6 0.01 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 100 80 10 1000 100 Figure 22. Safe Operating Area 200 Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4/+15 V FWD = C3M0060065K L = 135 μH 1 0.1 Drain-Source Voltage, VDS (V) Conditions: TJ = 25 °C VDD = 400 V IDS = 13.2 A VGS = -4/+15 V FWD = C3M0060065K L = 135 μH 180 ETotal 160 140 EOn Switching Loss (uJ) 120 Switching Loss (uJ) 75 10.00 Figure 21. Transient Thermal Impedance (Junction - Case) 60 40 ETotal EOn 120 100 80 60 EOff 40 20 20 EOff 0 5 10 15 Drain to Source Current, IDS (A) 20 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V) 7 50 Limited by RDS On 0.5 0 25 Case Temperature, TC (°C) 100.00 1 10E-3 0 Figure 20. Maximum Power Dissipation Derating Vs Case Temperature Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) Figure 19. Continuous Drain Current Derating vs. Case Temperature -25 C3M0060065K Rev. 3, 07-2020 25 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) 20 Figure 24. Clamped Inductive Switching Energy vs. RG(ext) 25 Typical Performance 150 100 ETotal EOn ETotal with Schottky 75 EOn with Schottky 50 EOff with Schottky 0 25 50 75 100 125 Junction Temperature, TJ (°C) 150 EOff 175 Figure 25. Clamped Inductive Switching Energy vs. Temperature 8 td(off) tr 30 td(on) 20 tf 10 25 0 Conditions: TJ = 25 °C VDD = 400 V IDS = 13.2 A VGS = -4/+15 V FWD = C3M0060065K 40 Switching Times (ns) 125 Switching Loss (uJ) 50 Conditions: IDS = 13.2 A VDD = 400 V RG(ext) = 2.5 Ω VGS = -4/+15 V L = 135 μH FWD = C3M0060065K FWD = C4D20120A C3M0060065K Rev. 3, 07-2020 200 0 0 5 10 15 External Gate Resistor RG(ext) (Ohms) Figure 26. Switching Times vs. RG(ext) 20 25 Test Circuit Schematic D1 L=156 uH L= 135 µH VDC C4D10120A C4D20120A 10A,1200V 1200V 20A, SiC Schottky Schottky SiC CDC=42.3 uF Q2 RG D.U.T D.U.T C3M0060065K C2M0080120D Figure 27. Clamped Inductive Switching Waveform Test Circuit Q1 RG L= 135uH µH L=156 VDC D.U.T C3M0060065K D.U.T C2M0080120D VGS = --4V 5V CDC=42.3 uF Q2 RG C3M0060065K C2M0080120D Figure 28. Body Diode Recovery Test Circuit 19 V 15 V VGSon VGS 0V VGSoff -4 V t < 100ns -8 V 3 CREE CONFIDENTIAL & PROPRIETARY © 2018 Cree, Inc. All rights reserved. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Figure 29. VGS Waveform Example 9 C3M0060065K Rev. 3, 07-2020 Package Dimensions Package TO-247-4L 10 C3M0060065K Rev. 3, 07-2020 Package Dimensions Package TO-247-4L NOTE ; 1. ALL METAL SURFACES: TIN PLATED, EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS 11 C3M0060065K Rev. 3, 07-2020 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 12 C3M0060065K Rev. 3, 07-2020 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power