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BZT52B3V9S RRG

BZT52B3V9S RRG

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    SC-90

  • 描述:

    DIODE ZENER 3.9V 200MW SOD323F

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT52B3V9S RRG 数据手册
BZT52B2V4S - BZT52B75S Taiwan Semiconductor 200mW, 2% Tolerance SMD Zener Diodes FEATURES KEY PARAMETERS ● ● ● ● Wide zener voltage range selection: 2.4V to 75V VZ tolerance selection of ± 2% Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 2.4-75 V PD 200 mW VF at IF=10mA 1 V TJ Max. 150 °C APPLICATIONS ● Low voltage stabilizers or voltage references ● Adapters ● On-board DC/DC converter Package SOD-323F Configuration Single die MECHANICAL DATA ● ● ● ● ● Case: SOD-323F Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 4.02 ± 0.5mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage @ IF=10mA SYMBOL VALUE UNIT VF 1 V PD 200 mW Junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +150 °C SYMBOL TYP UNIT RӨJA 625 °C/W Power dissipation THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance 1 Version: G1804 BZT52B2V4S - BZT52B75S Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) ZENER VOLTAGE PART MARKING NUMBER CODE TEST REGULAR TEST LEAKAGE CURRENT IMPEDANCE CURRENT CURRENT IR @ V R VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK V mA Ω Ω mA µA V Min. Nom. Max. Max. Max. BZT52B2V4S 0Z 2.35 2.40 2.45 5 100 564 1 45 1 BZT52B2V7S 1Z 2.65 2.70 2.75 5 100 564 1 18 1 BZT52B3V0S 2Z 2.94 3.00 3.06 5 100 564 1 9 1 BZT52B3V3S 3Z 3.23 3.30 3.37 5 95 564 1 4.5 1 BZT52B3V6S 4Z 3.53 3.60 3.67 5 90 564 1 4.5 1 BZT52B3V9S 5Z 3.82 3.90 3.98 5 90 564 1 2.7 1 BZT52B4V3S 6Z 4.21 4.30 4.39 5 90 564 1 2.7 1 BZT52B4V7S 7Z 4.61 4.70 4.79 5 80 470 1 2.7 2.0 BZT52B5V1S 8Z 5.00 5.10 5.20 5 60 451 1 1.8 2.0 BZT52B5V6S 9Z 5.49 5.60 5.71 5 40 376 1 0.9 2.0 BZT52B6V2S AZ 6.08 6.20 6.32 5 10 141 1 2.7 4.0 BZT52B6V8S BZ 6.66 6.80 6.94 5 15 75 1 1.8 4.0 BZT52B7V5S CZ 7.35 7.50 7.65 5 15 75 1 0.9 5.0 BZT52B8V2S DZ 8.04 8.20 8.36 5 15 75 1 0.63 5.0 BZT52B9V1S EZ 8.92 9.10 9.28 5 15 94 1 0.45 6.0 BZT52B10S FZ 9.80 10.00 10.20 5 20 141 1 0.18 7.0 BZT52B11S GZ 10.78 11.00 11.22 5 20 141 1 0.09 8.0 BZT52B12S HZ 11.76 12.00 12.24 5 25 141 1 0.09 8.0 BZT52B13S JZ 12.74 13.00 13.26 5 30 160 1 0.09 8.0 BZT52B15S KZ 14.70 15.00 15.30 5 30 188 1 0.045 10.5 BZT52B16S LZ 15.68 16.00 16.32 5 40 188 1 0.045 11.2 BZT52B18S MZ 17.64 18.00 18.36 5 45 212 1 0.045 12.6 BZT52B20S NZ 19.60 20.00 20.40 5 55 212 1 0.045 14.0 BZT52B22S PZ 21.56 22.00 22.44 5 55 235 1 0.045 15.4 BZT52B24S RZ 23.52 24.00 24.48 5 70 235 1 0.045 16.8 BZT52B27S SZ 26.46 27.00 27.54 2 80 282 0.5 0.045 18.9 BZT52B30S TZ 29.40 30.00 30.60 2 80 282 0.5 0.045 21.0 BZT52B33S UZ 32.34 33.00 33.66 2 80 306 0.5 0.045 23.0 BZT52B36S VZ 35.28 36.00 36.72 2 90 329 0.5 0.045 25.2 BZT52B39S WZ 38.22 39.00 39.78 2 130 329 0.5 0.045 27.3 BZT52B43S XZ 42.14 43.00 43.86 2 150 353 0.5 0.045 30.1 BZT52B47S YZ 46.06 47.00 47.94 2 170 353 0.5 0.045 33.0 BZT52B51S -Z 49.98 51.00 52.02 2 180 376 0.5 0.045 35.7 BZT52B56S =Z 54.88 56.00 57.12 2 200 400 0.5 0.045 39.2 BZT52B62S ≡Z 60.76 62.00 63.24 2 215 423 0.5 0.045 43.4 BZT52B68S >Z 66.64 68.00 69.36 2 240 447 0.5 0.045 47.6 BZT52B75S <Z 73.50 75.00 76.50 2 255 470 0.5 0.045 52.5 2 Max. Version: G1804 BZT52B2V4S - BZT52B75S Taiwan Semiconductor Notes: 1. The zener voltage (VZ) is tested under pulse condition of 30ms. 2. The device numbers listed have a standard tolerance on the normal zener voltage of ±2%. 3. For detailed information on price, availability and delivery of normal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK. ORDERING INFORMATION PART NO. (Note 1) PACKAGE PACKING BZT52BxxxS RRG SOD-323F 3K / 7" Reel BZT52BxxxS RR SOD-323F 3K / 7" Reel BZT52BxxxS R9G SOD-323F 10K / 13" Reel BZT52BxxxS R9 SOD-323F 10K / 13" Reel Note: 1. "xxx" defines voltage from 2.4V (BZT52B2V4S) to 75V (BZT52B75S) 3 Version: G1804 BZT52B2V4S - BZT52B75S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Forward Characteristics Fig. 2 Zener Breakdown Characteristics 100 TA=25oC 100 10 TA=25oC 10 Zener Current (mA) Forward Current (mA) 1000 1 0.1 0.01 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 1 2 3 5 6 7 8 9 10 11 12 Zener Voltage (V) Forward Voltage (V) Fig. 3 Zener Breakdown Characteristics Fig.4 Power Dissipation Curve 300 Power Dissipation (mW) 100 Zener Current (mA) 4 10 1 0.1 0.01 200 100 0 15 25 35 45 55 65 75 0 85 50 100 150 200 o Ambient Temperature ( C) Zener Voltage (V) 4 Version: G1804 BZT52B2V4S - BZT52B75S Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Capacitance Fig.6 Effect of Zener Voltage on Impedence 1000 1000 Dynamic Impedence(Ohm) Capacitance (pF) IZ=1mA 1V Bias 100 Bias at 50% of VZ (Nom) 10 IZ=5mA 100 IZ=20mA 10 1 1 1 10 Zener Voltage (V) 1 100 10 100 Zener Voltage (V) 5 Version: G1804 BZT52B2V4S - BZT52B75S Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-323F Unit (mm) DIM. Unit (inch) Min Max Min Max A 1.15 1.35 0.045 0.053 B 2.30 2.80 0.091 0.110 C 0.25 0.40 0.010 0.016 D 1.60 1.80 0.063 0.071 E 0.80 1.10 0.031 0.043 F 0.05 0.25 0.002 0.010 SUGGEST PAD LAYOUT Unit (mm) Unit (inch) Typ. Typ. A 0.63 0.025 B 0.83 0.033 C 1.60 0.063 D 2.86 0.113 DIM. 6 Version: G1804 BZT52B2V4S - BZT52B75S Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: G1804
BZT52B3V9S RRG
物料型号:BZT52B2V4S - BZT52B75S

器件简介: - 200mW功率,2%公差SMD Zener二极管 - 提供2.4V至75V的宽泛Zener电压范围选择 - 符合RoHS指令2011/65/EU和WEEE 2002/96/EC - 无卤素,符合IEC 61249-2-21标准

引脚分配:SOD-323F封装,带有阴极带以指示极性

参数特性: - 工作温度范围:-65°C至+150°C - 存储温度范围:-65°C至+150°C - 典型Zener电压范围:2.4V至75V - 最大功耗:200mW - 封装:SOD-323F - 配置:单片

功能详解: - 低电压稳定器或电压参考 - 适配器 - 板上DC/DC转换器

应用信息: - 适用于低电压稳定或电压参考、适配器、板上DC/DC转换器等应用

封装信息: - 封装类型:SOD-323F - 尺寸:按照PDF中的PACKAGE OUTLINE DIMENSION SOD-323F表格提供 - 建议的焊盘布局:按照PDF中的SUGGEST PAD LAYOUT表格提供
BZT52B3V9S RRG 价格&库存

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