MBR16150HC0G

MBR1635 – MBR16150 Taiwan Semiconductor 16A, 35V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 16 A VRRM 35 - 150 V IFSM 150 A TJ MAX 150 °C Package TO-220AC Configuration Single die MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.86g (approximately) TO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM MBR 1635 MBR 1635 35 Reverse voltage, total rms value VR(RMS) 24 Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Peak repetitive forward current (Rated VR, Square Wave, 20KHz) Peak repetitive reverse surge (1) current Voltage rate of change (Rated VR) IF 16 A IFSM 150 A IFRM 32 A PARAMETER SYMBOL Marking code on the device IRRM MBR 1645 MBR 1645 45 MBR 1650 MBR 1650 50 MBR 1660 MBR 1660 60 31 35 42 MBR MBR MBR UNIT 1690 16100 16150 MBR MBR MBR 1690 16100 16150 90 100 150 V 1 63 0.5 70 105 V A dV/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: K2103 MBR1635 – MBR16150 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 3 °C/W Junction-to-case resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) MBR1635 MBR1645 MBR1650 MBR1660 MBR1690 MBR16100 MBR16150 MBR1635 MBR1645 MBR1650 MBR1660 MBR1690 MBR16100 MBR16150 MBR1635 MBR1645 MBR1650 MBR1660 MBR1690 MBR16100 MBR16150 MBR1635 MBR1645 MBR1650 MBR1660 MBR1690 MBR16100 MBR16150 SYMBOL IF = 16A, TJ = 25°C VF IF = 16A, TJ = 125°C TYP MAX UNIT - 0.63 V - 0.75 V - 0.85 V - 0.95 V - 0.57 V - 0.65 V - 0.75 V - 0.92 V - 500 µA - 300 µA - 100 µA - 15 mA - 10 mA - 7.5 mA - 5 mA TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR16x TO-220AC 50 / Tube MBR16xH TO-220AC 50 / Tube Notes: 1. “x” defines voltage from 35V(MBR1635) to 150V(MBR16150) 2. “H” means AEC-Q101 qualified 2 Version: K2103 MBR1635 – MBR16150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 16 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 20 12 8 100 4 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 CASE TEMPERATURE (°C) 0.1 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 10 1000 MBR1635-MBR1645 MBR1650-MBR1660 UF1DLW MBR1690-MBR16150 1 100 TJ=125°C TJ=125°C TJ=25°C 0.1 10 (A) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C 0.01 1 TJ=25°C Pulse width 300μs Pulse width 1% duty cycle 0.001 0.1 0.6 0.60.7 0.80.9 0.9 00.30.1 0.4 0.2 0.30.5 0.4 0.5 0.7 0.8 1 1.11 1.2 1.1 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) MBR1635-MBR1645 MBR1650-MBR16150 0.01 100 Fig.4 Typical Forward Characteristics 100 1 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 1 150 120 90 60 30 0 1 4 7 10 13 16 19 22 25 NUMBER OF CYCLES AT 60 Hz 3 Version: K2103 1.2 MBR1635 – MBR16150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 4 Version: K2103 MBR1635 – MBR16150 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AC MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2103 MBR1635 – MBR16150 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: K2103