8TQ080/S
8TQ100/S
Technical Data
Data Sheet N0639, Rev. A
8TQ080/S/ 8TQ100/S
SCHOTTKY RECTIFIER
Features
Applications
150℃ TJ operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Switching power supply
Redundant power subsystems
Converters
Free-Wheeling diodes
Reverse battery protection
8TQ...
8TQ...S
TO-220AB
D2PAK
Maximum Ratings:
Characteristics
Symbol
Condition
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
-
Average Rectified Forward Current
IF (AV)
50% duty cycle @Tc=116°C,
rectangular wave form
IFSM
EAS
IAR
Peak One Cycle Non-Repetitive Surge
Current
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Max.
80
(8TQ080)
100
(8TQ100)
Units
V
8
A
8.3ms, Half Sine pulse
330
A
TJ=25℃,IAS=0.50A,L=60mH
Current decaying linearly to zero in
1 μsec Frequency limited by TJ
max.VA=1.5×VR typical
7.5
mJ
A
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0.50
8TQ080/S
8TQ100/S
Technical Data
Data Sheet N0639, Rev. A
Electrical Characteristics:
Characteristics
Symbol
Forward Voltage Drop*
Reverse Current *
VF1
Typ.
Max.
Units
@ 8A, Pulse, TJ = 25 ℃
0.71
0.75
V
VF2
@ 8A, Pulse, TJ = 125 ℃
@VR = rated VR
TJ = 25 ℃
@VR = rated VR
TJ = 125 ℃
@VR = 5V, TC = 25 ℃
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
0.56
0.58
V
0.0003
1.0
mA
0.02
7
mA
400
500
pF
8.0
-
nH
-
10,000
V/μs
IR1
IR2
Junction Capacitance
CT
Series Inductance
LS
Voltage Rate of Change
dv/dt
Condition
* Pulse width < 300 µs, duty cycle < 2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case
Typical Thermal Resistance
Case to Heat Sink
Case Style
Symbol
Condition
Specification
Units
TJ
Tstg
-
-55 to +150
-55 to +150
C
C
2.0
C/W
0.50
C/W
RJC
RCS
DC operation
Mounting surface, smooth and
greased(only for TO-220)
TO-220ACD2PAK
Tube Specification
Tube Specification(TO-220AC)
Device
Package
Weight
Shipping
8TQ...
TO-220AC
1.8g
50pcs / tube
D²PAK
1.85g
800pcs / reel
8TQ...S
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
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8TQ080/S
8TQ100/S
Technical Data
Data Sheet N0639, Rev. A
Ratings and Characteristics Curves
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8TQ080/S
8TQ100/S
Technical Data
Data Sheet N0639, Rev. A
Marking Diagram
Where XXXXX is YYWWL
8
TQ
80/100
S
SSG
YY
WW
L
= Forward Current (8A)
= Device Type
= Reverse Voltage (80/100V)
= Package type
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Carrier Tape Specification D2PAK
Symbol
Millimeters
Min.
Max.
A
10.70
10.90
B
16.03
16.23
C
5.11
5.31
d
1.45
1.65
E
1.65
1.85
F
11.40
11.60
P0
3.90
4.10
P
15.90
16.10
P1
1.90
2.10
W
23.90
24.30
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8TQ080/S
8TQ100/S
Technical Data
Data Sheet N0639, Rev. A
Mechanical Dimensions TO-220AC
Symbol
Dimensions in millimeters
Min.
A
A1
A2
b
b1
c
D
D1
E
E1
e1
H1
L
L1
ΦP
Q
Θ1
Θ2
Θ3
4.47
1.17
2.52
0.71
1.17
0.31
14.64
8.50
10.01
9.98
4.98
6.04
13.00
3.56
3.74
2.54
Typical
4.70
1.27
2.69
0.81
1.27
0.38
14.94
8.07
10.16
10.18
5.08
6.24
13.86
3.80
3.84
2.74
5°
4°
4°
Max.
4.85
1.37
2.89
0.96
1.37
0.61
15.24
8.90
10.31
10.38
5.18
6.44
14.08
3.96
4.04
2.94
Mechanical Dimensions D2PAK
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
Millimeters
Min.
4.47
0
2.59
0.71
1.17
0.31
1.17
8.50
6.40
10.01
7.6
9.98
14.6
2.00
1.12
1.30
0
e3
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Typical
Max.
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.31
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
0.25BSC
5°
4°
4°
4.85
0.25
2.89
0.96
1.37
0.61
1.37
8.90
15.6
2.74
1.42
2.20
8°
8TQ080/S
8TQ100/S
Technical Data
Data Sheet N0639, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department
for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no
responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits
described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary
damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing)
Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
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