MBR735 C0G

MBR735 – MBR7150 Taiwan Semiconductor 7.5A, 35V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 7.5 A VRRM 35 - 150 V IFSM 150 A TJ MAX 150 °C Package TO-220AC Configuration Single die MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.85g (approximately) TO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Repetitive peak reverse voltage VRRM MBR 735 MBR 735 35 Reverse voltage, total rms value VR(RMS) 24 Forward current Surge peak forward current 8.3ms single half sine wave superimposed on rated load Peak repetitive forward current (Rated VR, Square Wave, 20KHz) Peak repetitive reverse surge (1) current Voltage rate of change (Rated VR) IF 7.5 A IFSM 150 A IFRM 15 A PARAMETER SYMBOL Marking code on the device IRRM MBR 745 MBR 745 45 MBR 750 MBR 750 50 MBR 760 MBR 760 60 MBR 790 MBR 790 90 MBR 7100 MBR 7100 100 31 35 42 63 70 1 0.5 MBR UNIT 7150 MBR 7150 150 V 105 V A dV/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +175 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: K2103 MBR735 – MBR7150 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient resistance RӨJA 15 °C/W Junction-to-case resistance RӨJC 5 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR (2) MBR735 MBR745 MBR750 MBR760 MBR790 MBR7100 MBR7150 MBR735 MBR745 MBR750 MBR760 MBR790 MBR7100 MBR7150 MBR735 MBR745 MBR750 MBR760 MBR790 MBR7100 MBR7150 MBR735 MBR745 MBR750 MBR760 MBR790 MBR7100 MBR7150 MBR735 MBR745 MBR750 MBR760 MBR790 MBR7100 MBR7150 MBR735 MBR745 MBR750 MBR760 MBR790 MBR7100 MBR7150 SYMBOL IF = 7.5A, TJ = 25°C IF = 15A, TJ = 25°C VF IF = 7.5A, TJ = 125°C IF = 15A, TJ = 125°C TJ = 25°C TYP MAX UNIT - - V - 0.75 V - 0.92 V - 0.95 V - 0.84 V - - V - - V - - V - 0.57 V - 0.65 V - 0.82 V - 0.92 V - 0.72 V - - V - - V - - V - 100 µA - 15 mA - 10 mA - 5 mA IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: K2103 MBR735 – MBR7150 Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR7x TO-220AC 50 / Tube MBR7xH TO-220AC 50 / Tube Notes: 1. “x” defines voltage from 35V(MBR735) to 150V(MBR7150) 2. “H” means AEC-Q101 qualified 3 Version: K2103 MBR735 – MBR7150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 MBR750-MBR7150 7 MBR735-MBR745 6 5 CAPACITANCE (pF) MBR735-MBR745 4 3 MBR750-MBR760 100 MBR790-MBR7150 2 1 0 f=1.0MHz Vsig=50mVp-p 10 25 50 75 100 125 150 0.1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=75°C 0.1 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 MBR735-MBR745 MBR750-MBR760 UF1DLW 1 MBR790-MBR7150 10 TJ=125°C TJ=125°C TJ=25°C 0.1 1 0.01 TJ=25°C Pulse widthPulse 300μs 1% duty cycle width 0.001 0.1 0.4 0.3 0.5 0.60.6 0.7 0.80.8 0 0.3 0.1 0.2 0.4 0.5 0.9 0.9 1 1.1 11.2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TJ=125°C 1 0.01 100 Fig.4 Typical Forward Characteristics 100 10 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics MBR735-MBR745 MBR750-MBR7150 1 (A) AVERAGE FORWARD CURRENT (A) 8 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: K2103 1.2 MBR735 – MBR7150 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: K2103 MBR735 – MBR7150 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AC MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2103 MBR735 – MBR7150 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: K2103