PBHV9040T,215

PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat transistor 1 January 2023 Product data sheet 1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T 2. Features and benefits • • • • • High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC Small SMD plastic package 3. Applications • • • • • • • Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCESM collector-emitter peak voltage VBE = 0 V - - -500 V VCEO collector-emitter voltage open base - - -400 V IC collector current - - -0.25 A hFE DC current gain 100 200 - VCE = -10 V; IC = -50 mA; Tamb = 25 °C PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 C B 1 2 SOT23 E sym013 6. Ordering information Table 3. Ordering information Type number Package PBHV9040T Name Description Version SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body SOT23 7. Marking Table 4. Marking codes Type number Marking code[1] PBHV9040T W5% [1] % = placeholder for manufacturing site code PBHV9040T Product data sheet All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 2 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -500 V VCEO collector-emitter voltage open base - -400 V VCESM collector-emitter peak voltage VBE = 0 V - -500 V VEBO emitter-base voltage open collector - -6 V IC collector current - -0.25 A ICM peak collector current - -0.5 A IBM peak base current - -200 mA Ptot total power dissipation - 300 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab150 400 Ptot (mW) 300 200 100 0 - 75 - 25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig. 1. Power derating curve PBHV9040T Product data sheet All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 3 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) thermal resistance from junction to solder point [1] [1] Min Typ Max Unit - - 417 K/W - - 70 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab151 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.5 0.2 0.1 0.05 10 1 0.02 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV9040T Product data sheet All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 4 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -320 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -320 V; IE = 0 A; Tj = 150 °C - - -10 µA IEBO emitter-base cut-off current VEB = -4 V; IC = 0 A; Tamb = 25 °C - - -100 nA ICES collector-emitter cut-off VCE = -320 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA hFE DC current gain VCE = -10 V; IC = -50 mA; Tamb = 25 °C 100 200 - VCE = -10 V; IC = -100 mA; Tamb = 25 °C 80 200 - VCE = -10 V; IC = -250 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 10 25 - IC = -100 mA; IB = -20 mA; Tamb = 25 °C - -110 -200 mV VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation IC = -100 mA; IB = -20 mA; pulsed; tp ≤ voltage 300 µs; δ ≤ 0.02; Tamb = 25 °C - -1 -1.1 V td delay time - 9 - ns tr rise time - 1810 - ns ton turn-on time - 1819 - ns ts storage time - 715 - ns tf fall time - 1085 - ns toff turn-off time - 1800 - ns fT transition frequency VCE = -10 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C - 55 - MHz Cc collector capacitance VCB = -20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 7 - pF Ce emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C - 150 - pF PBHV9040T Product data sheet VCC = -2 V; IC = -0.15 A; IBon = -0.03 A; IBoff = 0.03 A; Tamb = 25 °C All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 5 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 006aab182 400 006aab183 - 0.5 IB (mA) = - 140 IC (A) hFE - 126 - 0.4 300 - 112 (1) - 84 - 0.3 - 42 - 28 - 0.2 0 - 10- 1 - 14 (3) 100 - 0.1 -1 - 10 - 102 IC (mA) 0 - 103 VCE = -10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 3. - 70 - 56 (2) 200 - 98 0 -1 -2 -4 VCE (V) -5 Tamb = 25 °C Fig. 4. Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values 006aab184 - 1.2 006aab185 - 1.3 VBE (V) VBEsat (V) (1) - 0.8 - 0.9 (1) (2) (2) (3) (3) - 0.4 0 - 10- 1 - 0.5 -1 - 10 - 102 IC (mA) - 0.1 - 10- 1 - 103 VCE = -10 V (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 5. -3 Product data sheet - 10 - 102 - 103 - 104 IC (mA) IC/IB = 5 (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PBHV9040T -1 Fig. 6. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 6 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 006aab186 - 10 VCEsat (V) VCEsat (V) -1 -1 - 10- 1 - 10- 2 - 10- 1 (1) (2) (3) -1 (1) - 10- 1 - 10 - 102 IC (mA) - 10- 2 - 10- 1 - 103 Fig. 8. 006aab188 104 103 103 102 102 10 10 (1) (2) (3) (1) (3) 1 - 10 - 102 IC (mA) 10- 1 10- 1 - 103 IC/IB = 5 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C -1 - 10 - 102 IC (mA) - 103 Tamb = 25 °C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5 Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet - 103 (2) 1 -1 IC (mA) 006aab189 104 RCEsat (Ω) PBHV9040T - 102 - 10 Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) Fig. 9. -1 Tamb = 25 °C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5 Collector-emitter saturation voltage as a function of collector current; typical values 10- 1 10- 1 (2) (3) IC/IB = 5 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 7. 006aab187 - 10 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 7 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 11. Test information VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) oscilloscope 450 Ω R2 VI DUT R1 mgd624 Fig. 11. Test circuit for switching times 12. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 18-03-12 Fig. 12. Package outline SOT23 PBHV9040T Product data sheet All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 8 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 13. Reflow soldering footprint for SOT23 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 14. Wave soldering footprint for SOT23 PBHV9040T Product data sheet All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 9 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV9040T v.3 20230101 Product data sheet - PBHV9040T_2 Modifications: • • • • The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. Legal texts have been adapted to the new company name where appropriate. Product changed to non-automotive qualification. Please refer to nexperia.com for automotive (-Q) product alternative(s). Packing information removed. PBHV9040T_2 20090115 Product data sheet - PBHV9040T_1 PBHV9040T_1 20080212 Product data sheet - - PBHV9040T Product data sheet All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 10 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor 15. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal PBHV9040T Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 11 / 12 PBHV9040T Nexperia 500 V, 0.25 A PNP high-voltage low VCEsat transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information.......................................................... 8 12. Package outline.......................................................... 8 13. Soldering..................................................................... 9 14. Revision history........................................................10 15. Legal information......................................................11 © Nexperia B.V. 2023. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 1 January 2023 PBHV9040T Product data sheet All information provided in this document is subject to legal disclaimers. 1 January 2023 © Nexperia B.V. 2023. All rights reserved 12 / 12