SIT8924BAL12-33N-50.000000

SiT8924B Automotive AEC-Q100 Oscillator Features           Applications AEC-Q100 with extended temperature range (-55°C to 125°C) Frequencies between 1 MHz and 110 MHz accurate to 6 decimal places Supply voltage of 1.8V or 2.25V to 3.63V Excellent total frequency stability as low as ±20 ppm Industry best G-sensitivity of 0.1 PPB/G Low power consumption of 3.8 mA typical at 1.8V Standby mode for longer battery life LVCMOS/LVTTL compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free    Automotive, extreme temperature and other high-rel electronics Infotainment systems, collision detection devices, and in-vehicle networking Powertrain control Electrical Characteristics Table 1. Electrical Characteristics[1,2] All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage. Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 – 110 MHz Refer to Table 13 to 15 for a list supported frequencies Frequency Stability and Aging Frequency Stability F_stab -20 – +20 ppm -25 – +25 ppm Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load (15 pF ± 10%) -30 – +30 ppm -50 – +50 ppm -40 – +85 °C AEC-Q100 Grade 3 -40 – +105 °C AEC-Q100 Grade 2 -40 – +125 °C AEC-Q100 Grade 1 -55 – +125 °C Extended cold AEC-Q100 Grade1 Operating Temperature Range Operating Temperature Range (ambient) T_use Supply Voltage and Current Consumption Supply Voltage Current Consumption OE Disable Current Standby Current Vdd Idd I_od I_std 1.62 1.8 1.98 V 2.25 – 3.63 V All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V and 3.3V are supported – 4.0 4.8 mA No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V – 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V – – 4.5 mA Vdd = 2.5V to 3.3V, OE = Low, Output in high Z state – – 4.3 mA Vdd = 1.8V, OE = Low, Output in high Z state – 2.6 – µA Vdd = 2.8V to 3.3V, ST = Low, Output is weakly pulled down – 1.4 – µA Vdd = 2.5V, ST = Low, Output is weakly pulled down – 0.6 – µA Vdd = 1.8V, ST = Low, Output is weakly pulled down LVCMOS Output Characteristics Duty Cycle Rise/Fall Time Output High Voltage Output Low Voltage Rev 1.7 DC Tr, Tf All Vdd levels 45 – 55 % – 1.5 3 ns Vdd = 2.25V - 3.63V, 20% - 80% – 1.3 2.5 ns Vdd = 1.8V, 20% - 80% 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) VOH VOL May 22, 2019 www.sitime.com SiT8924B Automotive AEC-Q100 Oscillator Table 1. Electrical Characteristics[1,2] (continued) Parameters Symbol Min. Typ. Max. Unit Condition Input Characteristics Input High Voltage VIH 70% – – Vdd Input Low Voltage VIL Input Pull-up Impedance Z_in – – 30% Vdd Pin 1, OE or ST – 100 – kΩ Pin 1, OE logic high or logic low, or ST logic high 2 – – MΩ Pin 1, ST logic low Pin 1, OE or ST Startup and Resume Timing Startup Time T_start – – 5.5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold RMS Period Jitter T_jitt – 1.6 2.5 ps f = 75 MHz, 2.25V to 3.63V – 1.9 3.0 ps f = 75 MHz, 1.8V RMS Phase Jitter (random) T_phj – 0.5 – ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz – 1.3 – ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Enable/Disable Time Resume Time Jitter Notes: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. The typical value of any parameter in the Electrical Characteristic table is specified for the nominal value of the highest voltage option for that parameter and at 25°C temperature. Table 2. Pin Description Pin Symbol Output Enable 1 OE/ ST /NC Top View Functionality Standby No Connect H[3]: specified frequency output L: output is high impedance. Only output driver is disabled. H[3]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. Any voltage between 0 and Vdd or Open[3]: Specified frequency output. Pin 1 has no function. OE/ST/NC 1 4 VDD GND 2 3 OUT [4] 2 GND Power Electrical ground 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[4] Figure 1. Pin Assignments Notes: 3. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 4. A capacitor of value 0.1 µF or higher between Vdd and GND is required. Rev 1.7 Page 2 of 19 www.sitime.com SiT8924B Automotive AEC-Q100 Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C Vdd -0.5 4 V Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Junction Temperature[5] – 150 °C θJA, 4 Layer Board θJA, 2 Layer Board θJC, Bottom (°C/W) (°C/W) (°C/W) 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 Note: 5. Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[6] Package Note: 6. Refer to JESD51 for θJA and θJC definitions, and reference layout used to determine the θJA and θJC values in the above table. Table 5. Maximum Operating Junction Temperature[7] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 85°C 95°C 105°C 115°C 125°C 135°C Note: 7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev 1.7 Page 3 of 19 www.sitime.com SiT8924B Automotive AEC-Q100 Oscillator Test Circuit and Waveform Vdd Vout 4 3 Test Point tr tf 80% Vdd Power Supply 0.1µF 1 15pF (including probe and fixture capacitance) 2 50% 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd 1kΩ OE/NC Function Figure 3. Waveform[8] Figure 2. Test Circuit[8] Note: 8. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams 90% Vdd Vdd Vdd 50% Vdd T_start Pin 4 Voltage No Glitch during start up T_resume ST Voltage CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_resume: Time to resume from ST Figure 4. Startup Timing (OE/ ST Mode)[9] Figure 5. Standby Resume Timing ( ST Mode Only) Vdd Vdd 50% Vdd OE Voltage 50% Vdd T_oe OE Voltage T_oe CLK Output CLK Output HZ HZ T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only) Note: 9. SiT8924 has “no runt” pulses and “no glitch” output during startup or resume. Rev 1.7 Page 4 of 19 www.sitime.com SiT8924B Automotive AEC-Q100 Oscillator Performance Plots[10] 1.8 V 2.5 V 2.8 V 3V 3.3 V 6.0 DUT1 DUT2 DUT3 DUT4 DUT5 DUT6 DUT7 DUT8 DUT9 DUT10 DUT11 DUT12 DUT13 DUT14 DUT15 DUT16 DUT17 DUT18 DUT19 DUT20 25 5.5 20 Frequency (ppm) Idd (mA) 5.0 4.5 4.0 3.5 15 10 5 0 -5 -10 -15 -20 3.0 0 20 40 60 80 -25 100 -55 -35 -15 Frequency (MHz) 2.5 V 2.8 V 3.0 V 45 65 85 105 125 Figure 9. Frequency vs Temperature 1.8 V 3.3 V 2.5 V 2.8 V 3.0 V 3.3 V 55 4.0 54 3.5 53 3.0 Duty cycle (%) RMS period jitter (ps) 25 Temperature (°C) Figure 8. Idd vs Frequency 1.8 V 5 2.5 2.0 1.5 1.0 52 51 50 49 48 47 0.5 46 0.0 0 20 40 60 80 45 100 0 20 40 Frequency (MHz) Figure 10. RMS Period Jitter vs Frequency 2.5 V 2.8 V 3.0 V 3.3 V 2.5 2.5 2.0 2.0 1.5 1.0 100 1.8 V 2.5 V 0 20 2.8 V 3.0 V 3.3 V 1.5 1.0 0.5 0.5 0.0 0.0 -40 -20 0 20 40 60 80 100 -40 120 Temperature (°C) Figure 12. 20%-80% Rise Time vs Temperature Rev 1.7 80 Figure 11. Duty Cycle vs Frequency Fall time (ns) Rise time (ns) 1.8 V 60 Frequency (MHz) -20 40 60 80 100 120 Temperature (°C) Figure 13. 20%-80% Fall Time vs Temperature Page 5 of 19 www.sitime.com SiT8924B Automotive AEC-Q100 Oscillator Performance Plots[10] 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 V 3.0 V 2.8 V 3.3 V 1.0 2.0 1.9 0.9 1.8 0.8 1.6 IPJ (ps) IPJ (ps) 1.7 1.5 1.4 1.3 0.7 0.6 0.5 1.2 0.4 1.1 1.0 10 20 30 40 50 60 70 80 90 100 110 0.3 10 Frequency (MHz) 20 30 40 50 60 70 80 90 100 110 Frequency (MHz) Figure 14. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[11] Figure 15. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[11] Notes: 10. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 11. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies up to 40 MHz. Rev 1.7 Page 6 of 19 www.sitime.com SiT8924B Automotive AEC-Q100 Oscillator Programmable Drive Strength The SiT8924 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are:  Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time.  Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time.  Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The SiT8924 can support up to 60 pF in maximum capacitive loads with drive strength settings. Refer to the Rise/Tall Time Tables (Table 7 to Table 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. SiT8924 Drive Strength Selection Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT8924 nominal supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V). 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section. 3. Under the capacitive load column, select the desired rise/fall times. EMI Reduction by Slowing Rise/Fall Time Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature can be calculated as follows: Max Frequency = 1 5 x Trf_20/80 where Trf_20/80 is the typical value for 20%-80% rise/fall time. Example 1 Calculate fMAX for the following condition: Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall Time Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength.  Vdd = 1.8V (Table 7)  Capacitive Load: 30 pF  Desired Tr/f time = 3 ns (rise/fall time part number code = E) Part number for the above example: SiT8924BIE12-18E-66.666660 Drive strength code is inserted here. Default setting is “-” High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3V SiT8924 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT8924. Rev 1.7 Page 7 of 19 www.sitime.com SiT8924B Automotive AEC-Q100 Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 7. Vdd = 1.8V Rise/Fall Times for Specific CLOAD Table 8. Vdd = 2.5V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD L A 5 pF 6.16 3.19 15 pF 11.61 6.35 30 pF 22.00 11.00 45 pF 31.27 16.01 60 pF 39.91 21.52 Drive Strength \ CLOAD L A 5 pF 4.13 2.11 15 pF 8.25 4.27 30 pF 12.82 7.64 45 pF 21.45 11.20 60 pF 27.79 14.49 R B T E U F or "‐": default 2.11 1.65 0.93 0.78 0.70 0.65 4.31 3.23 1.91 1.66 1.48 1.30 7.65 5.79 3.32 2.94 2.64 2.40 10.77 8.18 4.66 4.09 3.68 3.35 14.47 11.08 6.48 5.74 5.09 4.56 R B T E or "‐": default U F 1.45 1.09 0.62 0.54 0.43 0.34 2.81 2.20 1.28 1.00 0.96 0.88 5.16 3.88 2.27 2.01 1.81 1.64 7.65 5.86 3.51 3.10 2.79 2.54 9.88 7.57 4.45 4.01 3.65 3.32 Table 9. Vdd = 2.8V Rise/Fall Times for Specific CLOAD Table 10. Vdd = 3.0V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 3.77 7.54 12.28 19.57 25.27 L 3.60 7.21 11.97 18.74 24.30 A R B 1.94 1.29 0.97 3.90 2.57 2.00 7.03 4.72 3.54 10.24 7.01 5.43 13.34 9.06 6.93 1.84 1.22 0.89 3.71 2.46 1.92 6.72 4.54 3.39 9.86 6.76 5.20 12.68 8.62 6.64 T 0.55 1.12 2.08 3.22 4.08 E or "‐": default U F 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 A R B T or "‐": default E U F 0.51 0.38 0.30 1.00 0.92 0.83 1.97 1.72 1.55 3.07 2.71 2.40 3.90 3.51 3.13 0.27 0.76 1.39 2.16 2.85 Table 11. Vdd = 3.3V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L 3.39 6.88 11.63 17.56 23.59 A R B 1.74 1.16 0.81 3.50 2.33 1.82 6.38 4.29 3.22 8.98 6.04 4.52 12.19 8.34 6.33 T or "‐": default E U F 0.46 0.33 0.28 0.25 1.00 0.87 0.79 0.72 1.86 1.64 1.46 1.31 2.60 2.30 2.05 1.83 3.84 3.35 2.93 2.61 Rev 1.7 Page 8 of 19 www.sitime.com SiT8924B Automotive AEC-Q100 Oscillator Pin 1 Configuration Options (OE, ST , or NC) Pin 1 of the SiT8924 can be factory-programmed to support three modes: Output enable (OE), standby ST ̅ ̅̅ or No Connect (NC). These modes can also be programmed with the Time Machine II using Field Programmable Oscillators. In addition, the SiT8924 supports “no runt” pulses and “no glitch” output during startup or when the device output driver is enabled as shown in the waveform captures in Figure 17 and Figure 18. Output Enable (OE) Mode In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in