Silicon Epitaxial Planar Switching Diode
Features
• Small plastic package suitable
PINNING
PIN
for surface mounted design
DESCRIPTION
1
Cathode
2
Anode
2
1
• High reliability with high surge
current handling capability
Top View
Marking Code: "T4"
Simplified outline SOD-323 and symbol
Applications
• High speed switching
Absolute Maximum Ratings (Ta = 25 C)
O
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
90
V
Reverse Voltage
VR
80
V
IF(AV)
100
mA
Peak Forward Current
IFM
225
mA
Surge Forward Current (1 s)
IFSM
500
mA
Tj
150
O
Tstg
- 55 to + 150
O
Symbol
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
1.2
V
Reverse Current
at VR = 80 V
IR
0.1
µA
Capacitance between Terminals
at VR = 0.5 V, f = 1 MHz
CT
3
pF
Reverse Recovery Time
at VR = 6 V, IF = 10 mA, RL = 100 Ω
trr
4
ns
Average Rectified Forward Current
Junction Temperature
Storage Temperature Range
C
C
Electrical Characteristics (Ta = 25 C)
O
Parameter
1 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
2 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
3 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
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