VBMB1104N

VBMB1104N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.034 at VGS = 10 V 50a TrenchFET® Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested • • • • RoHS COMPLIANT APPLICATIONS • Isolated DC/DC Converters D TO-220 FULLPAK G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Parameter Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy b Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °C d Operating Junction and Storage Temperature Range ID Unit V 50a 28a IDM 120 IAS 31 EAS 61 A mJ c PD 360 3.70 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mount (TO-263)d RthJA 40 RthJC 0.4 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). 1 VBMB1104N www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) rDS(on) 120 0.034 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.063 gfs VDS = 15 V, ID = 30 A nA µA A VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea V 2.5 Ω 0.084 S 25 b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Time 5100 VGS = 0 V, VDS = 25 V, f = 1 MHz 90 VDS = 100 V, VGS = 10 V, ID = 65 A Fall Timec td(off) VDD = 100 V, RL = 1.5 Ω ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω tf 35 220 330 45 70 200 300 50 120 Forward Voltagea VSD IF = 65 A, VGS = 0 V trr IRM(REC) Qrr Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Ω ns °Cb ISM Reverse Recovery Charge 2 3.3 24 Pulsed Current Reverse Recovery Time nC 1.7 IS Peak Reverse Recovery Current 130 34 Source-Drain Diode Ratings and Characteristics TC = 25 Continuous Current pF 23 0.5 td(on) tr c 480 210 IF = 50 A, di/dt = 100 A/µs A 1.0 1.5 V 130 200 ns 8 12 A 1.2 µC 0.52 VBMB1104N www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 140 VGS = 10 thru 5 V 4V 120 I D - Drain Current (A) I D - Drain Current (A) 120 100 80 60 40 100 80 60 TC = 125 °C 40 3V 20 25 °C 20 2V - 55 °C 0 0 0 2 4 6 10 8 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 180 0.060 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 150 25 °C 120 125 °C 90 60 VGS = 10 V 0.045 0.030 0.015 30 0.000 0 0 20 40 60 80 100 0 120 40 20 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 7000 20 VGS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 60 5000 4000 3000 2000 Crss 1000 VDS = 100 V ID = 50A 16 12 8 4 Coss 0 0 0 25 50 75 100 125 150 0 25 50 75 100 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 125 150 3 VBMB1104N www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 100 VGS = 10 V ID = 30 A I S - Source Current (A) 2.0 (Normalized) rDS(on) - On-Resistance 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 240 230 ID = 1.0 mA 100 V(BR)DSS (V) I Dav (A) 220 IAV (A) at TA = 25 °C 10 210 200 1 190 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time 4 1 180 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 150 175 VBMB1104N www.VBsemi.com THERMAL RATINGS 1000 75 rDS(on) Limited* 60 10 µs I D - Drain Current (A) I D - Drain Current (A) 100 45 30 100 µs 10 1 15 0 0 25 50 75 100 125 150 0.1 0.1 175 TC = 25 °C Single Pulse 1 10 1 ms 10 ms 100 ms DC 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 VBMB1104N www.VBsemi.com TO-220 FULLPAK (HIGH VOLTAGE) A E A1 ØP n d1 d3 D u L1 V L b3 A2 b2 c b e INCHES MILLIMETERS DIM. A A1 A2 b b2 b3 c D d1 d3 E e L L1 n ØP u v ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 MIN. 4.570 2.570 2.510 0.622 1.229 1.229 0.440 8.650 15.88 12.300 10.360 MAX. 4.830 2.830 2.850 0.890 1.400 1.400 0.629 9.800 16.120 12.920 10.630 MIN. 0.180 0.101 0.099 0.024 0.048 0.048 0.017 0.341 0.622 0.484 0.408 13.730 3.500 6.150 3.450 2.500 0.500 0.520 0.122 0.238 0.120 0.094 0.016 2.54 BSC 13.200 3.100 6.050 3.050 2.400 0.400 MAX. 0.190 0.111 0.112 0.035 0.055 0.055 0.025 0.386 0.635 0.509 0.419 0.100 BSC 0.541 0.138 0.242 0.136 0.098 0.020 Notes 1. To be used only for process drawing. 2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet Cpk > 1.33. 4. All dimensions include burrs and plating thickness. 5. No chipping or package damage. 2 VBMB1104N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.