BC847BV,315

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Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BV NPN general purpose double transistor Product data sheet 2001 Sep 10 NXP Semiconductors Product data sheet NPN general purpose double transistor FEATURES BC847BV PINNING • 300 mW total power dissipation PIN • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage 6 5 • Excellent coplanarity due to straight leads • Low collector capacitance DESCRIPTION • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • Reduces required board space • Reduces pick and place costs. 4 6 5 APPLICATIONS 4 TR2 TR1 • General purpose switching and amplification. 1 DESCRIPTION 2 1 3 2 3 MAM447 Top view NPN double transistor in a SOT666 plastic package. PNP complement: BC857BV. MARKING TYPE NUMBER BC847BV 2001 Sep 10 MARKING CODE Fig.1 Simplified outline (SOT666) and symbol. 1F 2 NXP Semiconductors Product data sheet NPN general purpose double transistor BC847BV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. 2001 Sep 10 3 VALUE UNIT 416 K/W NXP Semiconductors Product data sheet NPN general purpose double transistor BC847BV CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor IE = 0; VCB = 30 V − − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 μA IC = 0; VEB = 5 V − − 100 nA DC current gain IC = 2 mA; VCE = 5 V 200 − 450 VBE base-emitter voltage IC = 2 mA; VCE = 5 V 580 655 700 mV VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 100 mV IC = 100 mA; IB = 5 mA; note 1 − − 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 755 − mV Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − − 1.5 pF Ce emitter capacitance IC = ic = 0; VEB = 500 mV;f = 1 MHz − 11 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz ICBO collector-base cut-off current IEBO emitter-base cut-off current hFE Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. MBH724 300 handbook, full pagewidth VCE = 5 V hFE 200 100 0 10−2 10−1 1 10 Fig.2 DC current gain; typical values. 2001 Sep 10 4 102 IC (mA) 103 NXP Semiconductors Product data sheet NPN general purpose double transistor BC847BV Graphical information BC847BV MHB971 600 MHB972 1200 BE (mV) 1000 handbook, halfpage handbook, halfpage V hFE 500 (1) 800 400 (1) (2) 300 600 200 400 (2) (3) (3) 100 200 0 10−1 1 10 102 0 10−2 103 10−1 1 10 IC (mA) VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.3 DC current gain; typical values. MHB973 104 handbook, halfpage VCEsat (mV) 1200 BEsat (mV) 1000 103 800 102 103 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHB974 handbook, halfpage V (1) (2) 600 (3) 102 400 (1) 200 (2) (3) 10 10−1 1 10 102 IC (mA) 0 10−1 103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.5 Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Sep 10 5 1 10 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet NPN general purpose double transistor BC847BV PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2001 Sep 10 EUROPEAN PROJECTION 6 NXP Semiconductors Product data sheet NPN general purpose double transistor BC847BV DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Sep 10 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Sep 10 Document order number: 9397 750 08589