MMSZ5225B

MMSZ5221B – MMSZ5262B Taiwan Semiconductor 500mW, 5% Tolerance SMD Zener Diode FEATURES ● ● ● ● ● KEY PARAMETERS Wide zener voltage range selection: 2.4V to 51V VZ tolerance selection of ± 5% Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 2.4 - 51 V PD 500 mW VF at IF = 10mA 0.9 V TJ MAX 150 °C APPLICATIONS ● Low voltage stabilizers or voltage references ● Adapters ● On-board DC/DC converter Package SOD-123F Configuration Single die MECHANICAL DATA ● ● ● ● ● Case: SOD-123F Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 8.85mg (approximately) SOD-123F ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Forward voltage @ IF = 10mA VF 0.9 V Power dissipation PD 500 mW Junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +150 °C SYMBOL TYP UNIT RӨJA 330 °C/W THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance 1 Version: H2007 MMSZ5221B – MMSZ5262B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PART NUMBER MARKING CODE ZENER VOLTAGE TEST CURRENT IZT mA REGULAR IMPEDANCE ZZT @ IZT ZZK @ IZK Ω Ω Max Max TEST CURRENT IZK mA LEAKAGE CURRENT IR @ VR µA V Max Min VZ @ IZT V Nom MMSZ5221B Z2V4 2.28 2.4 2.52 20 30 1200 0.25 100 1 MMSZ5225B Z3V0 2.85 3.0 3.15 20 29 1600 0.25 50 1 MMSZ5226B Z3V3 3.14 3.3 3.47 20 28 1600 0.25 25 1 MMSZ5227B Z3V6 3.42 3.6 3.78 20 24 1700 0.25 15 1 MMSZ5228B Z3V9 3.71 3.9 4.10 20 23 1900 0.25 10 1 MMSZ5229B Z4V3 4.09 4.3 4.52 20 22 2000 0.25 5 1 MMSZ5230B Z4V7 4.47 4.7 4.94 20 19 1900 0.25 5 2 MMSZ5231B Z5V1 4.85 5.1 5.36 20 17 1600 0.25 5 2 MMSZ5232B Z5V6 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMSZ5234B Z6V2 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMSZ5235B Z6V8 6.46 6.8 7.14 20 5 750 0.25 3 5 MMSZ5236B Z7V5 7.13 7.5 7.88 20 6 500 0.25 3 6 MMSZ5237B Z8V2 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMSZ5239B Z9V1 8.65 9.1 9.56 20 10 600 0.25 3 7 MMSZ5240B Z10V 9.50 10 10.50 20 17 600 0.25 3 8 MMSZ5241B Z11V 10.45 11 11.55 20 22 600 0.25 2 8.4 MMSZ5242B Z12V 11.40 12 12.60 20 30 600 0.25 1 9.1 MMSZ5243B Z13V 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMSZ5244B Z14V 13.30 14 14.70 9.0 15 600 0.25 0.1 10 MMSZ5245B Z15V 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMSZ5246B Z16V 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMSZ5248B Z18V 17.10 18 18.90 7.0 21 600 0.25 0.1 14 MMSZ5250B Z20V 19.00 20 21.00 6.2 25 600 0.25 0.1 15 MMSZ5251B Z22V 20.90 22 23.10 5.6 29 600 0.25 0.1 17 MMSZ5252B Z24V 22.80 24 25.20 5.2 33 600 0.25 0.1 18 MMSZ5254B Z27V 25.65 27 28.35 4.6 41 600 0.25 0.1 21 MMSZ5256B Z30V 28.50 30 31.50 4.2 49 600 0.25 0.1 23 MMSZ5257B Z33V 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMSZ5258B Z36V 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMSZ5259B Z39V 37.05 39 40.95 3.2 80 800 0.25 0.1 30 MMSZ5260B Z43V 40.85 43 45.15 3.0 93 900 0.25 0.1 33 MMSZ5261B Z47V 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 MMSZ5262B Z51V 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 Max Notes: 1. The zener voltage (VZ) is tested under pulse condition of 30ms. 2. The device numbers listed have a standard tolerance on the normal zener voltage of ±5%. 3. For detailed information on price, availability and delivery of normal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having a rms value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK. 2 Version: H2007 MMSZ5221B – MMSZ5262B Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MMSZ52xB RH SOD-123F 3K / 7" Reel MMSZ52xB RHG SOD-123F 3K / 7" Reel Notes: 1. "x" defines voltage from 2.4V (MMSZ5221B) to 51V (MMSZ5262B) 2. "G" means green compound (halogen-free) 3 Version: H2007 MMSZ5221B – MMSZ5262B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Forward Voltage Fig.2 Zener Breakdown Characteristics 100 ZENER CURRENT (mA) FORWARD CURRENT (mA) 1000 100 10 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 1 0.1 0.01 1.2 0 1 2 3 4 FORWARD VOLTAGE (V) 6 7 8 9 10 11 12 ZENER VOLTAGE (V) Fig.3 Zener Breakdown Characteristics Fig.4 Power Dissipation Curve 750 10 1 0.1 20 30 40 50 60 70 500 1 80 ZENER VOLTAGE (V) 4 UF1DLW TJ=125°C 0.1 250 TJ=25°C 0.01 0 0.001 0 0.3 0.01 10 10 (A) POWER DISSIPATION (mW) 100 ZENER CURRENT (mA) 5 Pulse width 0.4 50 100 0.5 0.6 0.7 0.8 0.9 AMBIENT TEMPERATURE (OC) 1 150 1.1 Version: H2007 1.2 MMSZ5221B – MMSZ5262B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Capacitance Fig.6 Effect of Zener Voltage on Impedance 1000 100 DYNAMIC IMPEDANCE (Ohm) CAPACITANCE (pF) 1000 1V Bias Bias at 50% of VZ(Nom) 10 IZ=1mA 100 IZ=5mA IZ=20mA 10 1 1 1 10 1 100 10 100 ZENER VOLTAGE (V) ZENER VOLTAGE (V) 5 Version: H2007 MMSZ5221B – MMSZ5262B Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-123F SUGGEST PAD LAYOUT 6 Version: H2007 MMSZ5221B – MMSZ5262B Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: H2007