BZT55C6V8 L1G

BZT55C2V4 - BZT55C75 Taiwan Semiconductor 500mW, 5% Tolerance Zener Diodes FEATURES KEY PARAMETERS ● Wide zener voltage range selection: 2.4V to 75V ● VZ tolerance selection of ± 5% ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC PARAMETER VALUE UNIT VZ 2.4-75 V PD 500 mW VF at IF=10mA 1 V TJ Max. Package APPLICATIONS ● ● ● ● Configuration Low voltage stabilizers or voltage references Adapters Lighting application On-board DC/DC converter 175 °C Quadro MiniMELF (LS34) Single die MECHANICAL DATA ● ● ● ● Case: Quadro Mini-MELF (LS34) Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 29 ± 2.5mg ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage @ IF=10mA SYMBOL VALUE UNIT VF 1 V Power dissipation PD 500 mW Junction temperature range TJ -65 to +175 °C Storage temperature range TSTG -65 to +175 °C SYMBOL TYP UNIT RӨJA 500 °C/W THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance 1 Version: H1809 BZT55C2V4 - BZT55C75 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) ZENER VOLTAGE PART NUMBER TEST REGULAR TEST CURRENT IMPEDANCE CURRENT VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK V mA Ω Ω mA LEAKAGE CURRENT IR @ V R µA V Nom. Min. Max. Max. Max. BZT55C2V4 2.4 2.28 2.56 5 85 600 1 50 1 BZT55C2V7 2.7 2.51 2.89 5 85 600 1 10 1 BZT55C3V0 3.0 2.8 3.2 5 85 600 1 4 1 BZT55C3V3 3.3 3.1 3.5 5 85 600 1 2 1 BZT55C3V6 3.6 3.4 3.8 5 85 600 1 2 1 BZT55C3V9 3.9 3.7 4.1 5 85 600 1 2 1 BZT55C4V3 4.3 4.0 4.6 5 75 600 1 1 1 BZT55C4V7 4.7 4.4 5.0 5 60 600 1 0.5 1 BZT55C5V1 5.1 4.8 5.4 5 35 550 1 0.1 1 BZT55C5V6 5.6 5.2 6.0 5 25 450 1 0.1 1 BZT55C6V2 6.2 5.8 6.6 5 10 200 1 0.1 2 BZT55C6V8 6.8 6.4 7.2 5 8 150 1 0.1 3 BZT55C7V5 7.5 7.0 7.9 5 7 50 1 0.1 5 BZT55C8V2 8.2 7.7 8.7 5 7 50 1 0.1 6.2 BZT55C9V1 9.1 8.5 9.6 5 10 50 1 0.1 6.8 BZT55C10 10 9.4 10.6 5 15 70 1 0.1 7.5 BZT55C11 11 10.4 11.6 5 20 70 1 0.1 8.2 BZT55C12 12 11.4 12.7 5 20 90 1 0.1 9.1 BZT55C13 13 12.4 14.1 5 26 110 1 0.1 10 BZT55C15 15 13.8 15.6 5 30 110 1 0.1 11 BZT55C16 16 15.3 17.1 5 40 170 1 0.1 12 BZT55C18 18 16.8 19.1 5 50 170 1 0.1 13 BZT55C20 20 18.8 21.1 5 55 220 1 0.1 15 BZT55C22 22 20.8 23.3 5 55 220 1 0.1 16 BZT55C24 24 22.8 25.6 5 80 220 1 0.1 18 BZT55C27 27 25.1 28.9 5 80 220 1 0.1 20 BZT55C30 30 28 32 5 80 220 1 0.1 22 BZT55C33 33 31 35 5 80 220 1 0.1 24 BZT55C36 36 34 38 5 80 220 1 0.1 27 BZT55C39 39 37 41 2.5 90 500 0.5 0.1 28 BZT55C43 43 40 46 2.5 90 600 0.5 0.1 32 BZT55C47 47 44 50 2.5 110 700 0.5 0.1 35 BZT55C51 51 48 54 2.5 125 700 0.5 0.1 38 BZT55C56 56 52 60 2.5 135 1,000 0.5 0.1 42 BZT55C62 62 58 66 2.5 150 1,000 0.5 0.1 47 BZT55C68 68 64 72 2.5 160 1,000 0.5 0.1 51 BZT55C75 75 70 79 2.5 170 1,000 0.5 0.1 56 2 Max. Version: H1809 BZT55C2V4 - BZT55C75 Taiwan Semiconductor Notes: 1. The zener voltage (VZ) is tested under pulse condition of 30ms 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±5% 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK ORDERING INFORMATION ORDERING CODE (Note) PACKAGE PACKING BZT55Cxxx L0 Quadro Mini-MELF 10K / 13" Reel BZT55Cxxx L0G Quadro Mini-MELF 10K / 13" Reel BZT55Cxxx L1 Quadro Mini-MELF 2.5K / 7" Reel BZT55Cxxx L1G Quadro Mini-MELF 2.5K / 7" Reel Note: "xxx" defines voltage from 2.4V (BZT55C2V4) to 75V (BZT55C75) “G” means green compound (halogen free) 3 Version: H1809 BZT55C2V4 - BZT55C75 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Typical Forward Characteristics Fig. 2 Admissible Power Dissipation Curve 600 500 TA=25oC Power Dissipation (mW) Forward Current (mA) 1000 100 10 400 300 200 100 0 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 50 100 150 200 Ambient Temperature (oC) Forward Voltage (V) Fig. 3 Typical Capacitance 1000 Capacitance (pF) 100 1V Bias 10 Bias at 50% of VZ (Nom) 1 1 10 100 Zener Voltage (V) 4 Version: H1809 BZT55C2V4 - BZT55C75 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION Quadro Mini-MELF Unit (mm) DIM. Unit (inch) Min Max Min Max A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.20 0.45 0.008 0.018 D 1.8 TYP. 0.071 TYP. SUGGEST PAD LAYOUT Unit (mm) Unit (inch) Typ. Typ. A 1.25 0.049 B 2.00 0.079 C 2.50 0.098 D 5.00 0.197 DIM. 5 Version: H1809 BZT55C2V4 - BZT55C75 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: H1809