IRF830PBF

IRF830PBF 550V N-Channnel MOSFET ●Features： ■ 4.0A, 550V, RDS(on)(Typ) =2.2Ω@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Switching ■ Improved dv/dt Capability ●Application: ■ High Frequency Switching Mode Power Supply ■ Active Power Factor Correction ｔｏ ｒ TO-220 1.Gate ｕｃ ｃｏ -Pulsed 16* A ±30 V (Note2) 240 mJ Avalanche Current (Note1) 4.0 A Repetitive Avalanche Energy (Note1) 10.0 mJ Peak Diode Recovery dv/dt (Note3) 4.5 V/ns ｍｉ Drain Current IAR (Note1) Power Dissipation(TC =25C) -Derate above 25°C 33 W 0.26 W/C Operating Junction Temperature 150 C -55 to+150 C Max Unit ＪＳ Ｍ Tstg V A Single Pulsed Avalanche Energy Tj 550 2.5* EAS PD Unit A Gate-Source Voltage dv/dt Value 4.0* VGSS EAR 3.Source (S) - Continuous(Tc=25C) - Continuous(Tc=100C) Drain Current ＩＣ ＲＯ 　 IDM Drain-Source Voltage Ｓｅ ID ｎｄ Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter VDSS (G) 2.Drain (D) Storage Temperature Range * Drain Current Limited by Maximum Junction Temperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance,Junction to Case 3.79 C /W RθJA Thermal Resistance,Junction to Ambient 62.5 C /W ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第１／５页 IRF830PBF 550V N-Channnel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=550V,VGS=0V VDS=520V,Tc=125C VGS=+30V, VDS=0V VGS=-30V, VDS=0V Max Unit 550 -- -- V -- 0.65 -- V/C ----- ----- 1 10 100 -100 μA μA nA nA VDS= VGS, ID=250μA 2.0 -- -2.2 4.0 2.6 V Ω VGS=10 V, ID=2.0A VDS=40 V, ID=2.0A (Note4) -- 3.6 -- S ＪＳ Ｍ ＩＣ ＲＯ 　 Ｓｅ ｍｉ ｃｏ Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr VDD = 325 V, ID = 4.0 A, RG = 25 Ω (Note4,5) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg VDS = 520 V, ID =4.0 A, Gate-Source Charge Qgs VGS = 10 V (Note4,5) Gate-Drain Charge Qgd Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VGS =0V,IS=4.0A VSD Reverse Recovery Time trr VGS =0V, IS=4.0A, d IF /dt=100A/μs (Note4) Reverse Recovery Charge Qrr ---- 560 62 10 ---- pF pF pF -------- 30 75 60 55 12 4.0 4.8 -------- ns ns ns ns nC nC nC ------ ---330 2.67 4.0 16 1.4 --- A A V ns μC ｒ IDSS ID=250μA (Referenced to 25C) Typ ｕｃ Breakdown Voltage Temperature Coefficient ｎｄ △BVDSS /△TJ Min ｔｏ Electrical Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Test Conditons Off Characteristics BVDSS Drain-source Breakdown Voltage VGS=0V ,ID=250μA Notes: 1、Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature. 2、L = 25.0mH, IAS =4.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25C. 3、ISD≤4.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25C. 4、Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%. 5、Essentially Independent of Operating Temperature. ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第２／５页 IRF830PBF 550V N-Channnel MOSFET Transfer Characteristics ｎｄ Body Diode Forward Voltage Variation vs. Source Current and Temperature ＩＣ ＲＯ 　 Ｓｅ ｍｉ ｃｏ On-Resistance Variation vs. Drain Current and Gate Voltage ｕｃ ｔｏ ｒ On-Regin Characteristics Gate Charge Characteristics ＪＳ Ｍ Capacitance Characteristics ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第３／５页 IRF830PBF 550V N-Channnel MOSFET On-Resistance Variation vs. Temperature ｃｏ Maximum Drain Current Vs. Case Temperature ＪＳ Ｍ ＩＣ ＲＯ 　 Ｓｅ ｍｉ Maximum Safe Operating Area ｎｄ ｕｃ ｔｏ ｒ Breakdown Voltage Variation vs. Temperature ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第４／５页 IRF830PBF 550V N-Channnel MOSFET ＪＳ Ｍ ＩＣ ＲＯ 　Ｓ ｅｍ ｉｃ ｏｎ ｄｕ ｃｔ ｏｒ TO-220 Package Dimensions Symbol W W1 W2 W3 * W4 Size Min Max 9.66 10.28 2.54（TYP） 0.70 0.95 1.17 1.37 1.32 1.72 Unit: mm Symbol W5 L L1 L2 L3 Size Min 9.80 9.00 6.40 2.70 12.70 Max 10.20 9.40 6.80 2.90 14.27 Symbol L4** L5 T T1 T2 ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ Size Min 6.20 2.79 4.30 1.15 2.20 Max 6.60 3.30 4.70 1.40 2.60 Symbol T3 G(Φ) Size Min 0.45 3.50 Max 0.60 3.70 第５／５页