MUR1620CTRG

MUR1620CTRG Ultra Fast Recovery Diode ●Features： ■A total of anode structure ■Low Power Loss and High Efficiency ■Low Forward Voltage Drop ■High Surge Capability ｔｏ ｒ ●Application: ■ High Frequency Switch ｕｃ ■ Free Wheeling,and Polarity Protection Applications Absolute Maximum Ratings(Tc=25C unless otherwise noted) Parameter VRRM Maximum Repetitive Reverse Voltage VR Maximum DC Reverse Voltage IFSM Value Unit 200 V ｃｏ 200 8(Per Leg) Average Rectified Forward Current, Tc=120C 16(Per Device) Peak Forward Surge Current,8.3ms Half Sine wave 120 ｍｉ IF(AV) ｎｄ Symbol V A A Operating Junction Temperature 150 C Tstg Storage Temperature Range -55 to+150 C Parameter Max Unit Thermal Resistance,Junction to Case Per Leg 3.8 C /W ＩＣ ＲＯ 　 Ｓｅ Tj Thermal Characteristics(Tc=25C unless otherwise noted) Symbol RθJC ＪＳ Ｍ Electrical Characteristics(Tc=25C unless otherwise noted) Symbol VRRM Parameter Maximum Repetitive Reverse Voltage IR Reverse Current VF Forward Voltage Trr Maximum Reverse Recovery Time Test Conditons Min IR=100μA 200 VR =200V Tc=25C VR =200V Tc=125C IF=8A Tc=25C IF=8A Tc=125C IF=16A Tc=25C IF=16A Tc=125C IF=0.5A IR=1.0A Irr=0.25A ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ Max Unit V 0.1 5 0.95 1.0 1.20 1.10 50 mA V ns 第１／３页 MUR1620CTRG Ultra Fast Recovery Diode Typical Performance Characteristics Figure 2. Reverse Leakage Current ｃｏ ｎｄ ｕｃ ｔｏ ｒ Figure 1. Forward Current Characteristics Figure 4. Power Derating ＪＳ ＭＩ Ｃ ＲＯ 　 Ｓｅ ｍｉ Figure 3. Junction Capacitance ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第２／３页 MUR1620CTRG Ultra Fast Recovery Diode TO-220AB ＪＳ ＭＩ Ｃ ＲＯ 　 Ｓｅ ｍｉ ｃｏ ｎｄ ｕｃ ｔｏ ｒ Unit: mm Symbol W W1 W2 W3 * W4 Size Min Max 9.66 10.28 2.54（TYP） 0.70 0.95 1.17 1.37 1.32 1.72 Symbol W5 L L1 L2 L3 Size Min 9.80 9.00 6.40 2.70 12.70 Max 10.20 9.40 6.80 2.90 14.27 Symbol L4** L5 T T1 T2 ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ Size Min 6.20 2.79 4.30 1.15 2.20 Max 6.60 3.30 4.70 1.40 2.60 Symbol T3 G(Φ) Size Min 0.45 3.50 Max 0.60 3.70 第３／３页