KIA840SB

KIA 8A，500V N-CHANNEL MOSFET 840S SEMICONDUCTORS 1. Features n RDS(ON)=0.7Ω (typ) @VGS=10V n RoHS compliant n Low on resistance n Low gate charge n Peak current vs pulse width curve 2. Applications n Adaptor n TV main power n SMPS power supply n LCD panel power 3.Symbol 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.2 JAN 2016 KIA 8A，500V N-CHANNEL MOSFET 840S SEMICONDUCTORS 4. Absolute maximum ratings (TC=25°C,unless otherwise specified) Units Rating Parameter Symbol Drain-source voltage Continuous drain current Continuous drain current TC=100 ºC Pulsed drain current Power dissipation Derating factor above 25℃ Gate-source voltage Single pulse avalanche energy Avalanche energy, repetitive Avalanche current Peak diode recovery dv/dt Gate-source ESD(HBM-C=100pF,R=1.5KΩ) VDSS ID IDMa1 PD VGS EASa2 EARa1 IAR a1 dv/dt a3 VESD(G-S) Operating junction and storage temperature range Maximum temperature for soldering TO-220 TO-252, TO-263 500 8.0 5.5 28 160 100 1.28 0.8 +20 400 30 7.0 5.5 4000 V A A A W W/ ºC V mJ mJ A V/ns V TJ ,TSTG 150,-55 to150 ºC TL 300 ºC *Drain current limited by maximum junction temperature Caution：Stresses greater than those listed in the”Absolute maximum ratings”table may cause permanent Damage to the device 5. Thermal characteristics Parameter Symbol Rating Unit Junction-case RθJC 1.04 ºC/W Junction-ambient RθJA 100 ºC/W Test condition Drain lead soldered to water cooled heatsink,PD adjusted for a peak junction temperature of +150 ºC 1 cubic foot chamber,free air 2 of 6 Rev 1.2 JAN 2016 KIA 8A，500V N-CHANNEL MOSFET 840S SEMICONDUCTORS 6. Electrical characteristics Parameter Drain-source breakdown voltage Bvdss temperature coefficient Symbol BVDSS △BVDSS/△TJ (TC=25°C,unless otherwise specified) Test Conditions Min Typ Max Units VGS=0V,ID=250μA 500 V Reference 25℃ ID=250uA - 0.74 - - - 25 V/ºC Gate source breakdown voltage VGSO Gate-source forward leakage IGSS(F) VDS=500V, VGS=0V TA=25°C VDS=400V, VGS=0V TA=125°C IGS=+1mA (open drain) VGS=20V Gate-source reverse leakage IGSS(R) VGS=-20V - - -10 Drain-source on-resistance RDS(on) VGS=10V,ID=4A - 0.7 0.9 Ω Gate threshold voltage VGS(TH) VDS= VGS, ID=250uA 2 3 4 V Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Continuous source current（body biode） gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VDS=15V, ID=3A - 8.5 960 110 10 11 17 46 22 24 4.0 10 - 8 S Maximum pulsed current（body biode） Diode forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Pulse width tp