MMBT2907A

MMBT2907A AO3400 SI2305 SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR (PNP) FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) Base 2.Emitter 3.Collector SOT-23 Plastic Package Marking: 2F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PD Total Device Dissipation 250 mW RθJA Thermal Resistance Junction to Ambient 500 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 ICBO VCB=-50V,IE=0 Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Max Unit V -10 nA hFE(1)* VCE=-10V,IC=-0.1mA 75 hFE(2)* VCE=-10V,IC=-1mA 100 hFE(3)* VCE=-10V,IC=-10mA 100 hFE(4)* VCE=-10V,IC=-150mA 100 hFE(5) * VCE=-10V,IC=-500mA 50 VCE(sat)* IC=-150mA,IB=-15mA -0.4 V VCE(sat)* IC=-500mA,IB=-50mA -1.60 V VBE(sat)* IC=-150mA,IB=-15mA -1 V VBE(sat)* IC=-500mA,IB=-50mA -2.6 V Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf www.tw-gmc.com Typ VCE=-20V,IC=-50mA,f=100MHz VCE=-30V,IC=-150mA,B1=-15mA VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA 1 300 200 MHz 10 ns 40 ns 80 ns 30 ns MMBT2907A AO3400 SI2305 Typical Characteristics Static Characteristic -0.25 hFE 500 —— IC COMMON EMITTER VCE=-10V Ta=25℃ -800uA -720uA -480uA -0.10 -400uA -320uA -240uA -0.05 IB=-80uA -0 -2 -4 -6 VCEsat -0.9 -8 —— -10 VCE Ta=25℃ 200 100 0 -0.1 -12 -1 (V) -10 COLLECTOR CURRENT IC VBEsat -1.2 -100 IC -600 (mA) —— IC β=10 -0.6 Ta=100℃ -0.3 Ta=25℃ -0.8 Ta=100℃ -0.4 Ta=25℃ -1 -10 -100 COLLECTOR CURRENT IC -600 IC -0.0 -600 -1 (mA) -10 -100 COLLECTOR CURRENT —— VBE 100 Cob/ Cib IC — — VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib (pF) -100 -600 (mA) COMMON EMITTER VCE=-10V CAPACITANCE Ta=100℃ -10 Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 Pc —— Ta 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.tw-gmc.com 100 Ta 10 1 -0.1 -1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) 300 Cob C IC COLLECTOR CURRENT Ta=100℃ β=10 -0.0 COLLECTOR POWER DISSIPATION Pc (mW) 300 -160uA COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) DC CURRENT GAIN -560uA BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT -640uA -0.15 -0.00 (mA) 400 hFE -0.20 IC (A) COMMON EMITTER 125 150 (℃ ) 1 2 -10 V (V) -20 MMBT2907A AO3400 SI2305 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 1 3 2