MMBT4403

MMBT4403 MMBT3904 AO3400 SI2305 MMBT4403 TRANSISTOR (PNP) FEATURES · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching SOT-23 1．BASE 2．EMITTER 3．COLLECTOR MARKING：2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-35 V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE DC current gain VCE=-2V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V fT Transition frequency www.tw-gmc.com 1 3 2 VCE= -10V, IC= -20mA f = 100MHz 200 MHz MMBT4403 MMBT3904 AO3400 SI2305 Typical Characteristics Static Characteristic -200 COMMON EMITTER Ta=25℃ -1mA -0.9mA -0.8mA -0.7mA -150 hFE 1000 -0.6mA -0.4mA -0.3mA -50 COMMON EMITTER VCE=-2V Ta=25℃ 100 -0.5mA -100 IC —— Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT (mA) IC -250 -0.2mA IB=-0.1mA -0 -0 -2 COLLECTOR-EMITTER VOLTAGE VCEsat -700 —— 10 -6 -4 VCE -1 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -600 -100 VBEsat -1.2 (mA) IC IC —— β=10 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -300 Ta=25℃ -0.8 Ta=100℃ -100 Ta=25℃ Ta=100℃ -0.4 -30 -10 -10 COLLECTOR CURRENT (V) -1 -3 -10 -30 -100 COLLECTOR CURRENT -600 IC IC -0.0 -600 -1 -3 (mA) -10 -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 50 COMMON EMITTER VCE=-2V —— -600 (mA) IC VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ Cib Cob C Ta=100℃ -10 CAPACITANCE (pF) COLLECTOR CURRENT (mA) IC -100 Ta=25℃ -1 -0.1 -0.0 -0.4 -0.8 10 1 1-0.1 -1.2 fT -600 -10 -1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— IC PC 400 —— V -30 (V) Ta 300 COLLECTOR POWER DISSIPATION P C (mW) TRANSITION FREQUENCY (MHz) fT VCE=-10V Ta=25℃ -100 200 100 -10 -1 COLLECTOR CURRENT www.tw-gmc.com -10 -3 IC 0 -30 (mA) 0 25 50 75 AMBIENT TEMPERATURE 1 3 2 100 Ta 125 (℃) 150 MMBT4403 MMBT3904 AO3400 SI2305 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 1 3 2