MMBT2222A

TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO Collector-Base Voltage 75 V Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC PC RθJA Collector Current -Continuous 600 mA Collector Dissipation 250 mW Thermal Resistance, Junction to Ambient 500 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55to+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Test conditions Min Typ Max Unit IC= 10μA, IE=0 75 V IC= 10mA, IB=0 40 V 6 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 0.01 µA Collector cut-off current ICEX VCE=30V, VBE(off)=3V 0.01 µA Emitter cut-off current IEBO 0.1 µA hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage VEB= 3V, IC=0 * * VCE(sat) * VBE(sat) * Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=10V, IC= 150mA 100 VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 500mA 42 IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz 300 1 0.3 2.0 1.2 300 VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. V V MHz 10 nS 25 nS 225 nS 60 nS Typical Characteristics MMBT2222A 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.