RB521S-40

          SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for rectifying small power applications PINNING   DESCRIPTION PIN   Features • Ultra small mold type • Low forward voltage   • High reliability 1 Cathode 2 Anode       1           Z   2 Top View Marking Code: "Z" Simplified outline SOD-523 and symbol     Absolute Maximum Ratings (Ta = 25 OC) Parameter   Symbol Value Unit Repetitive Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Mean Rectifying Current IO 200 mA IFSM 1 Tj 150 O Tstg - 55 to + 150 O Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range A C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 100 mA at IF = 200 mA     Reverse Current at VR = 10 V at VR = 40 V Symbol Min. VF 0.16 0.31 0.41 IR   - Max.       0.3 0.45 0.54 20 90 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Unit   V   μA     2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.     PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.