BC846A

NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Units Collector Base Voltage BC846 BC847, BC850 BC848, BC849 VCBO VCBO VCBO 80 50 30 V V V Collector Emitter Voltage BC846 BC847, BC850 BC848, BC849 VCEO VCEO VCEO 65 45 30 V V V Emitter Base Voltage BC846, BC847 BC848, BC849, BC850 VEBO VEBO 6 5 V V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Power Dissipation Ptot 200 mW Junction Temperature TJ 150 O C Storage Temperature Range TS - 65 to + 150 O C 1 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Characteristics at Tamb = 25 C O Parameter Symbol Min. Typ. Max. Units hFE hFE hFE 110 200 420 - 220 450 800 - Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VCEsat VCEsat - - 250 600 mV mV Base Emitter On Voltage at IC = 2 mA, VCE = 5 V at IC = 10 mA, VCE = 5 V VBE(on) VBE(on) 580 - - 700 720 mV mV ICBO - - 15 nA fT - 300 - MHz Cob - - 6 pF Cib - 9 - pF NF NF NF NF - - 10 4 4 3 dB dB dB dB DC Current Gain at VCE = 5 V, IC = 2 mA A B C Collector Cutoff Current at VCB = 30 V Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Input Capacitance at VEB = 0.5 V, f = 1 MHz Noise Figure at IC = 200 µA, VCE = 5 V, RG = 2 KΩ, f = 1 KHz at IC = 200 µA,VCE = 5 V, RG = 2 KΩ, f = 30 ~15 KHz BC846, BC847, BC848 BC849, BC850 BC849 BC850 2 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. CURRENT GAIN BANDWIDTH PRODUCT DC CURRENT GAIN fT(MHz), CURRENT GAIN-BANDWIDTH PRODUCT 10000 h FE DC CURRENT GAIN VCE=5V 1000 100 10 1 10 100 1000 I C(mA),COLLECTOR CURRENT VCE=5V 100 10 1 0.1 100 COLLECTOR OUTPUT CAPACITANCE f=1MHz 1000 VBE(sat) 100 VCE(sat) 1 10 I C(mA),COLLECTOR CURRENT I C=10IB 10 1 100 Cob(pF), CAPACITANCE VBE(sat),VCE(sat),(V) SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE 10000 1000 10 100 10 1 0.1 1000 1 10 100 1000 VCB(V),COLLECTOR-BASE VOLTAGE I C(mA),COLLECTOR CURRENT 3 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 Dimension in Millimeters Symbol Min Max A 0.90 1.10 A1 0.013 0.100 B 1.80 2.00 bp 0.35 0.50 C 0.09 0.150 D 2.80 3.00 E 1.20 1.40 HE 2.20 2.80 Lp 0.20 0.50 θ 0º 5º 4 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.