BAV23SE

Silicon Epitaxial Planar Diodes High voltage switching diode BAV23 BAV23SE 3 3 1 2 1 BAV23CC BAV23CA 3 1 2 3 2 1 2 BAV23 Marking Code: HC BAV23SE Marking Code: PY BAV23CC Marking Code: PZ BAV23CA Marking Code: RA SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 250 V Reverse Voltage VR 200 V Forward Current IF(AV) 400 mA Repetitive Peak Forward Current IFRM 625 mA Non-repetitive Peak Forward Surge Current at t = 10 ms at t = 100 μs at t = 1 μs Power Dissipation Ptot 1.7 3 9 350 Thermal Resistance Junction to Ambient Air RθJA 357 Tj, Tstg - 65 to + 150 Operating Junction and Storage Temperature Range IFSM A mW C/W O C O Characteristics at Ta = 25 O Parameter Symbol Min. Max. Unit V(BR)R 250 - V Forward Voltage at IF = 100 mA at IF = 200 mA VF - 1 1.25 V Reverse Current at VR = 200 V, Tj = 25 OC at VR = 200 V, Tj = 150 OC IR - 100 100 nA µA Ctot - 5 pF trr - 50 ns Reverse Breakdown Voltage at IR = 100 µA Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA, Irr = 0.1 X IR, RL = 100 Ω 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.