BAV99DW

Plastic-Encapsulate Diodes SWITCHING DIODE SOT-363 FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package For General Purpose Switching Applications z High Conductance z 6 5 4 1 2 3 MAKING: KJG Maximum Ratings @Ta=25℃ Parameter Symbol Limit VRRM VRWM VR 75 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non-Repetitive Peak Forward Surge Current @ t = 1.0µs IFSM @ t = 1.0s Unit 2 A 1 PD 200 mW RθJA 625 ℃/W Operating Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Power Dissipation Thermal Resistance Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol Test IR= 2.5µA V(BR) Reverse voltage leakage current IR Forward voltage VF Junction capacitance CT Reveres recovery time trr conditions Min Max 75 Unit V VR=75V 2.5 VR=20V IF=1mA IF=10mA IF=50mA IF=150mA 0.025 715 855 1000 1250 VR=0, f=1MHz 2 pF 4 ns IF=IR=10mA,Irr=0.1×IR, RL=100Ω 1 of 2 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. µA mV SOT-363 PACKAGE OUTLINE 2 of 2 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.